EQUIPMENT

Equipment

Our research team has extensive capabilities for the fabrication and measurement of semiconductor devices.

Thin-film growth and device fabrication are carried out at the Next Generation Semiconductor Convergence Technology Institute (INST) fab, which operates a 1000-class clean room. The semiconductor material corresponding to the active layer is processed in a metal oxide in situ sputtering chamber. There are several systems that can measure electrical and magnetic transport, including optics, for film characterization. The quantum phenomenon of electrons can be confirmed through high-frequency transport measurement at low temperature (10 mK), and electrical properties can be measured in a vacuum.

For thermal analysis of semiconductors, it is possible to measure the transient heat profile through a heat measuring instrument with sub-micron spatial resolution and 50 nsec time resolution.

We also take advantage of the many wonderful resources available through DGIST and our collaborators. We have access to 3D-atomic probe analysis (3D-AP), X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), X-ray photoelectron emission spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), MPMS. Squid, etc. These measurements allow us to better understand the new materials we are studying.

Growth / Fabrications

Sputter system

Metal sputter - Sputter chamber capable of metal deposition and metal wedge growth in ultra-high vacuum

Minimum vacuum level: ~10^-9 torr;

wafer size: max 4 inches

Oxide sputter - A sputter chamber capable of depositing oxides using RF power in a high vacuum state ;

Minimum vacuum level: ~10^-7 torr ;

wafer size: max 4 inches ;

Substrate temp: ~1100 C

Plasma processor - Plasma processing device using reactive gas to control surface oxidation

Dual channel thermal evaporator

A thermal evaporator that deposits metal materials used for electrodes. Deposition of vaporized metal material in two independent boats

Possible metals : Cr, Au, Al, Cu, etc.

Wafer size: max 6-inch, 4-inch & pieces

Analysis / Measurements

Probe station 4200

Capable of I-V, C-V and ultra-fast pulsed I-V measurements based on the keithley 4200 semiconductor characterizer.

DC I-V range : 10aA ~ 1A / 0.2uV ~ 210V

(measurable noise level ~ 10^-13A)

Capacitance range : 1kHz ~ 10MHz (+/- 30 V DC bias)

Pulse I-V range : +/1 40V (80V p-p), +/- 800mA, 200MSa/sec, 5ns sampling rate

Electric probe system 707A

I-V measurement system based on Keithley 707A switching box

Electrical I-V measurement such as pulse application and response measurement using switching box

Semiconductor I-V measurement, Reverse I-V mode, pulsed I-V measurement, leakage measurement, transistor I-V and output measurement available

Measurable noise level > 10^-13A

Dual source meter: Keithley 2636b

Single source meter: Keithley 2450

Arbitrary signal generator: Tektronix AFG 3000

DC power supply: ODA ops3010

CTRM700 (confocal thermal reflection microscope)

CTRM utilizes the reflection of the device to measure the thermal image of the micro-device. In general, heat generation in a device is observed through an IR camera, but due to the limited spatial resolution of IR, it is impossible to observe thermal image in a micron-sized device. The CTRM700 uses a 619 nm laser to observe the heating of the device by utilizing the change in the reflectance of the reflected light.

Spatial resolution: < 0.1um; Thermal resolution ~ 0.1C

Pulse probing system 707B

I-V & C-V measurement system based on Keithley 707B switching box

Electrical I-V measurement such as pulse application and response measurement using switching box

Semiconductor I-V measurement, Reverse I-V mode, pulsed I-V measurement, leakage measurement, transistor I-V and output measurement available.

Semiconductor device reliability test, pulse rising/falling response test, low frequency C-V (20Hz), semiconductor high voltage (up to 300Vp-p) tolerance evaluation

Measurable noise level > 10^-13A

Dual source meter: Keithley 2636b

Arbitrary signal generator: Agilent 81150

LCR Meter : Keysight E4980A

High speed signal amplifier: NF BA4825 (2MHz)

tTRM250 (transient thermal reflection microscope)

tTRM is a device thermal analysis system that can check the instantaneous responsiveness of the device's heating moment at a minimum interval of 50 nsec. tTRM has a spatial resolution of less than a micrometer and a temperature resolution of 0.1C. It is possible to observe the moment of instantaneous temperature rise and temperature diffusion phenomenon that occurs when voltage or current is applied in three dimensions. The incident light source may use the entire visible light region and selectively change incident light having a specific wavelength.

Spatial resolution: < 0.1um; Thermal resolution ~ 0.1C ; Time resolution > 50 nsec.

2D transfer system

Used for transfer of two-dimensional materials (graphene, MoS2, etc.) to the top of nano-scale electrodes

The manual and transfer systems contain all the required elements for the fabrication of a high quality 2D structure: A high resolution optical microscope with CCD camera, mechanical stage, vacuum chuck.

The transfer systems are designed to accurately place a stamp on a substrate, which can be moved relative to each other not only in the x-, y- and z-directions, but also by tilting and rotating. This allows the highest degree of freedom in the alignment of crystal flakes when fabricating structures.

Lens ~ x5, 10, 20, 50 ,100

Dilution fridge

Low temperature and high frequency measurements

T = 10 mK with DC and RF measurement setup

He3 fridge

300 mK and 9 T for DC measurements (Univ. of Tokyo, Hirakawa group: Collaborator)

2 K VTI system

T = 2 K and B_max = 9 T for high frequency and high field experiments

Vacuum Probe station

I-V measurement is possible under vacuum, and electrical properties can be confirmed at low temperature (77 K) using liquid nitrogen.

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