Publications

- 2025 -

[75] Ahn, H., Gu, M., Joo, B. S., Chang, Y. J., and Han, M., Tailoring Charge Trap Characteristics of Cobalt and Silicon Hybrid Nanostructure: Phases and Interface Effect of Thermal Treatment, Journal of Alloys and Compounds, 184159 (2025). 

[74] Sangwoo Nam, Hanyeol Ahn, Beomjin Park, Minseon Gu, Hyun Su Park, Seungchul Choi, Young Jun Chang, and Moonsup Han, Phonon-Assisted Charge Trapping and Threshold Voltage Modulation in MoS2 FETs with AlOxNy Overlayers, ACS Applied Materials & Interfaces 2025 17 (34), 48592-48599 (2025).

[73] Beomjin Park, Minseon Gu, Sangwoo Nam, Hyundon Kim, Jaehui Im, Hanyeol Ahn, Young Jun Chang, Moonsup Han, Charge Transfer Doping of MoS2 Field‐Effect Transistors by Aluminum Oxynitride Deposition, physica status solidi (a), 2500087 (2025). 

[72] H. Ahn, H. S. Park, M. Gu, Y. H. Khim, H. D. Kim, J. Im, S. Nam, E. Choi, Y. J. Chang, and M. Han, Ti-doping in Silicon Nitride: Enhanced Charge Trap Characteristics for Flash Memory, ACS Appl. Electron. Mater. 7, 1756 (2025).

[71] H. D. Kim, M. Gu, K. M. Lee, H. Ahn, J. Byun, G. Yon, J. Beak, H. Lim, J. Jung, J. Park, J. S. Kim, H. J. Hahm, S. Kim, W. J. Min, M. S. Hyun, Y. C. Park, G. Kim, Y. Park, M. Han, E. Choi, Y. J. Chang, Advanced spectroscopic methods for probing in-gap defect states in amorphous SiNx for charge trap memory applications, Current Applied Physics 69, 21 (2025).

- 2024 -

[70] Y. Han, J. Jeong, J. Joo, Y. G. Khim, M. Gu, M. Han, Y. J. Chang, H. Sohn, Ferroelectricity of Hf0.5Zr0.5O2 thin films grown by atomic layer deposition on epitaxial TiN bottom electrodes, Journal of Alloys and Compounds 1008, 176716 (2024).

[69] M. Gu, H. Jang, H. Ahn, H. J. Kim, M. S. Hyun, Y. C. Park, I. H. Kwak, S. Nam, J. Im, J. Baik, H. J. Shin, M. Han, G. Kim, Y. J. Chang, Nano-mapping of vertical contact electrodes using synchrotron scanning photoelectron microscopy, Applied Surface Science 655, 159605 (2024).

[68] M. Gu, M. Han, G. Kim, S. Kim, Electron transport through the multiple sulfur vacancies in MoS2, Current Applied Physics 57, 20 (2024).

[67] H. Ahn, J. Jeong, M. Gu, Y. J. Chang, M. Han, Controlling photoluminescence of silicon quantum dots using pristine-nanostates formation, Optical Materials 147, 114792 (2024) .

- 2023 -

[66]  M. Gu, K. W. Lee, B. Park, B. S. Joo, Y. J. Chang, D. W. Park, M. Han, Photoresponsivity Enhancement of Monolayer MoS2 by Silicon Quantum Dots, physica status solidi (RRL)–Rapid Research Letters 17, 2300220 (2023).

[65]  M. Gu, M. S. Hyun, M. Han, G. Kim, Y. J. Chang, Contact holes in vertical electrode structures analyzed by voltage contrast-SEM and conducting AFM, Current Applied Physics 53, 46 (2023).

[64]  Y. G. Khim, B. Park, J. E. Heo, Y. H. Khim, Y. R. Khim, M. Gu, T. G. Rhee, S. H. Chang, M. Han, and Y. J. Chang, Electrical Conductivity Enhancement of Epitaxially Grown TiN Thin Films, J. Korean Phys. Soc. 82, 486 (2023).

- 2022 -

[63]  M. Kim, J. Kwon, C. H. Kim, Y. Kim, D. Chung, H. Ryu, J. Jung, B. S. Kim, D. Song, J. D. Denlinger, M. Han, Y. Yoshida, T. Mizokawa, W. Kyung, and C. Kim, Signature of Kondo Hybridisation with an Orbital-Selective Mott Phase in 4d Ca2−xSrxRuO4, Npj Quantum Mater. 7, 59 (2022).

[62]  T. J. Yang, J. Park, S. Choi, C. Kim, M. Han, J.-H. Bae, S.-J. Choi, D. M. Kim, H. J. Shin, Y. S. Jeong, J. U. Bae, C. H. Oh, D.-W. Park, and D. H. Kim, Physics-Based Compact Model of Current Stress-Induced Threshold Voltage Shift in Top-Gate Self-Aligned Amorphous InGaZnO Thin-Film Transistors, IEEE Electron Device Lett. 43, 1685 (2022).

- 2021 -

[61]  B. S. Joo, M. Gu, J. Han, N. Jung, S. Kim, D. W. Park, and M. Han, Decay Time Dynamics of Red and Blue Luminescence of Surface-Functionalized Silicon Quantum Dots, J. Lumin. 236, 118121 (2021).

[60]  B. Sohn, E. Lee, S. Y. Park, W. Kyung, J. Hwang, J. D. Denlinger, M. Kim, D. Kim, B. Kim, H. Ryu, S. Huh, J. S. Oh, J. K. Jung, D. Oh, Y. Kim, M. Han, T. W. Noh, B.-J. Yang, and C. Kim, Sign-Tunable Anomalous Hall Effect Induced by Two-Dimensional Symmetry-Protected Nodal Structures in Ferromagnetic Perovskite Thin Films, Nat. Mater. 20, 1643 (2021).

[59]  J.-H. Kim, Y. Seo, J. T. Jang, S. Park, D. Kang, J. Park, M. Han, C. Kim, D.-W. Park, and D. H. Kim, Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate, Appl. Sci. 11, (2021).

- 2020 -

[58]  J.-H. Kwon, S. Jang, H. J. Kim, B. S. Joo, K. N. Yu, E. Choi, M. Han, J. H. Park, and Y. J. Chang, Microscopic and Chemical Analysis of Room Temperature UV Laser Annealing of Solution-Based Zinc-Tin-Oxide Thin Films, J. Anal. Sci. Technol. 11, 15 (2020).

- 2019 -

[57]  B. S. Joo, S. Jang, M. Gu, N. Jung, and M. Han, Effect of Auger Recombination Induced by Donor and Acceptor States on Luminescence Properties of Silicon Quantum Dots/SiO2 Multilayers, J. Alloys Compd. 801, 568 (2019).

- 2018 -

[56]  B. S. Joo, H. Kim, S. Jang, D. Han, and M. Han, Cobalt Germanide Nanostructure Formation and Memory Characteristic Enhancement in Silicon Oxide Films, J. Phys. Chem. Solids 119, 309 (2018).

[55]  J. S. Oh, M. Kim, G. Kim, H. G. Lee, H. K. Yoo, S. Sinn, Y. J. Chang, M. Han, C. Jozwiak, A. Bostwick, E. Rotenberg, H.-D. Kim, and T. W. Noh, Evidence for Absence of Metallic Surface States in BiO2-Terminated BaBiO3 Thin Films, Curr. Appl. Phys. 18, 658 (2018).

- 2017 -

[54]  S. Sinn, K. D. Lee, C. J. Won, J. S. Oh, M. Han, Y. J. Chang, N. Hur, B.-G. Park, C. Kim, H.-D. Kim, and T. W. Noh, Element-Specific Orbital Character in a Nearly-Free-Electron Superconductor Ag5Pb2O6 Revealed by Core-Level Photoemission, Sci. Rep. 7, 4528 (2017).

[53]  J. Kang, H.-D. Yang, B. S. Joo, J.-S. Park, S. Lee, S. Jeong, J. Kyhm, M. Han, J. D. Song, and I. K. Han, Quantum Cascade Lasers with Y2O3 Insulation Layer Operating at 8.1 Μm, Opt. Express 25, 19561 (2017).

[52]  B. S. Joo, Y. J. Chang, L. Moreschini, A. Bostwick, E. Rotenberg, and M. Han, Evidence for Indirect Band Gap in BaSnO3 Using Angle-Resolved Photoemission Spectroscopy, Curr. Appl. Phys. 17, 595 (2017).

- 2016 -

[51]  S. Jang and M. Han, Formation of Silicon Quantum Dots by RF Power Driven Defect Control, RSC Adv. 6, 88229 (2016).

[50]  S. Sinn, C. H. Kim, B. H. Kim, K. D. Lee, C. J. Won, J. S. Oh, M. Han, Y. J. Chang, N. Hur, H. Sato, B.-G. Park, C. Kim, H.-D. Kim, and T. W. Noh, Electronic Structure of the Kitaev Material α-RuCl3 Probed by Photoemission and Inverse Photoemission Spectroscopies, Sci. Rep. 6, 39544 (2016).

[49]  J. S. Oh, H.-S. Yu, C.-J. Kang, S. Sinn, M. Han, Y. J. Chang, B.-G. Park, K. Lee, B. Il Min, S. W. Kim, H.-D. Kim, and T. W. Noh, Manifestations of Quasi-Two-Dimensional Metallicity in a Layered Ternary Transition Metal Chalcogenide Ti2PTe2, Chem. Mater. 28, 7570 (2016).

[48]  J. S. Oh, C.-J. Kang, Y. J. Kim, S. Sinn, M. Han, Y. J. Chang, B.-G. Park, S. W. Kim, B. Il Min, H.-D. Kim, and T. W. Noh, Evidence for Anionic Excess Electrons in a Quasi-Two-Dimensional Ca2N Electride by Angle-Resolved Photoemission Spectroscopy, J. Am. Chem. Soc. 138, 2496 (2016).

[47]  C.-T. Kuo, M. Neumann, K. Balamurugan, H. J. Park, S. Kang, H. W. Shiu, J. H. Kang, B. H. Hong, M. Han, T. W. Noh, and others, Exfoliation and Raman Spectroscopic Fingerprint of Few-Layer NiPS3 van Der Waals Crystals, Sci. Rep. 6, 1 (2016).

[46]  B. L. Chittari, Y. Park, D. Lee, M. Han, A. H. MacDonald, E. Hwang, and J. Jung, Electronic and Magnetic Properties of Single-Layer MPX3 Metal Phosphorous Trichalcogenides, Phys. Rev. B 94, 184428 (2016).

[45]  C.-T. Kuo, K. Balamurugan, H. W. Shiu, H. J. Park, S. Sinn, M. Neumann, M. Han, Y. J. Chang, C.-H. Chen, H.-D. Kim, J.-G. Park, and T. W. Noh, The Energy Band Alignment at the Interface between Mechanically Exfoliated Few-Layer NiPS3 Nanosheets and ZnO, Curr. Appl. Phys. 16, 404 (2016).

[44]  I. H. Lee, B. S. Joo, H. J. Kim, Y. S. Yun, S. Y. Jang, M. G. Kang, C. Y. Kang, B.-G. Park, M. Han, and Y. J. Chang, Excimer Laser Annealing Effects on AlGaN/GaN Heterostructures, Curr. Appl. Phys. 16, 628 (2016).

- 2015 -

[43]  S. Jang, B. S. Joo, S. Kim, K. Kong, H. Chang, B. D. Yu, and M. Han, Effects of Proton Irradiation on Si-Nanocrystal/SiO 2 Multilayers: Study of Photoluminescence and First-Principles Calculations, J. Mater. Chem. C 3, 8574 (2015).

[42]  G. Y. Kim, W. Jo, K. D. Lee, H.-S. Choi, J. Y. Kim, H.-Y. Shin, T. T. T. Nguyen, S. Yoon, B. S. Joo, M. Gu, and M. Han, Optical and Surface Probe Investigation of Secondary Phases in Cu2ZnSnS4 Films Grown by Electrochemical Deposition, Sol. Energy Mater. Sol. Cells 139, 10 (2015).

- 2014 -

[41]  S. Jang and M. Han, RF Power Control for Fabricating Amorphous Silicon Nitride without Si-Nanocrystals and Its Effect on Defects and Luminescence, J. Alloys Compd. 614, 102 (2014).

- 2013 -

[40]  R. H. Shin, S. H. Oh, J. H. Lee, W. Jo, S. Jang, M. Han, and S. Choi, Influence of Oxygen Annealing Conditions on the Electronic Structure, Dielectric Function, and Charge Conduction of Gallium-Ferrite Thin Films, J. Korean Phys. Soc. 63, 2179 (2013).

[39]  B. S. Joo, M. Han, Y. J. Chang, J. H. Shin, S. Y. Jang, and T. Jang, High-Resolution X-Ray Photoemission Study of Photo-Grown Ga 2 O 3 in GaN/AlGaN/GaN Heterostructures on Si Substrates, J. Korean Phys. Soc. 63, 2314 (2013).

- 2012 -

[38]  H. Kim, O. Dugerjav, G. Duvjir, H. Li, S. Jang, M. Han, B. D. Yu, and J. M. Seo, Stress-Driven Structural Transformation of Sb-Passivated Si(114), Surf. Sci. 606, 312 (2012).

- 2011 -

[37]  H. J. Yun, J. Lee, M. C. Jung, M. S. Han, K. Park, K. S. Ahn, and C. J. Choi, Chemical Bonding Structures of Silicon Oxynitride Films Grown by Ionised N2 and Pure O2 Gas Mixtures at Low Temperature, Adv. Appl. Ceram. 110, 25 (2011).

[36]  Y. M. Lee, S. H. Jang, M. Han, and M. C. Jung, Chemical States and Photoluminescence of Si0.3Ge 0.7-Nitride Film Formed by N2+ Gas, Appl. Phys. Lett. 99, 9 (2011).

[35]  S. Jang, S. H. Jung, E. Choi, M. Han, and J. Lee, Effect of Plasma Power Strength on Optical Transitions in Silicon-Nitride Films, J. Korean Phys. Soc. 59, 2334 (2011).

[34]  D. Han, S. Jang, H. Kim, and M. Han, Concurrent Formation of Blocking-Oxide and Charge-Trap Layers by Selective Oxidation and Phase Separation of a SiGeO Layer, J. Korean Phys. Soc. 59, 3037 (2011).

[33]  C. Ko, M. Han, and H.-J. Shin, Generation of Optically Active States in A-SiNx by Thermal Treatment, J. Lumin. 131, 1434 (2011).

[32]  K. W. Min, Y. K. Kim, G. Shin, S. Jang, M. Han, J. Huh, G. T. Kim, and J. S. Ha, White-Light Emitting Diode Array of P+-Si/Aligned n-SnO2 Nanowires Heterojunctions, Adv. Funct. Mater. 21, 119 (2011).

- 2010 -

[31]  J.-D. Hwang, K.-M. Lee, K.-S. Keum, S. Jang, M. Han, J. Sok, K. Park, and W.-S. Hong, Characteristics of Silicon Nanocrystals Embedded in the Silicon Nitride Films Deposited by PE-CVD for Optoelectronics Applications, ECS Meet. Abstr. MA2010-02, 86 (2010).

[30]  J.-D. Hwang, K.-M. Lee, Y.-J. Lee, S. Jang, M. Han, and W.-S. Hong, Structure Changes of Amorphous Silicon Carbide Films by Mixture Gas Ratio and Filament Temperature on Cat-CVD, ECS Meet. Abstr. MA2010-02, 88 (2010).

[29]  M.-C. Jung, Y. M. Lee, H.-J. Shin, D.-H. Kwon, M. Kim, C. Ko, M. Han, and Y. Park, Spontaneous Formation of Ge Nanocrystals with the Capping Layer of Si3N4 by N2+ Implantation and Rapid Thermal Annealing, Thin Solid Films 518, 6010 (2010).

- 2009 -

[28]  K. M. Lee, T. H. Kim, J. D. Hwang, S. Jang, K. Jeong, M. Han, S. Won, J. Sok, K. Park, and W. S. Hong, Size Control of Silicon Nanocrystals in Silicon Nitride Film Deposited by Catalytic Chemical Vapor Deposition at a Low Temperature (≤200 °C), Scr. Mater. 60, 703 (2009).

[27]  S. Jang, C. Ko, K. Jeong, and M. Han, The Charge Storage Characteristics of Si‐QDs Embedded in Silicon Nitride Films (Abstract), AIP Conf. Proc. 1119, 219 (2009).

[26]  K. Jeong, S. Jang, C. Ko, K. Park, and M. Han, Photoluminescence Properties in Ge Nanoclusters Formed by Nitridation of Ge Surface Modified by Dry Etching (Abstract), AIP Conf. Proc. 1119, 220 (2009).

[25]  J.-D. Hwang, K.-M. Lee, Y.-J. Lee, S. Jang, M. Han, S. Won, J. Sok, K. Park, and W.-S. Hong, Characteristics of Silicon Nanocrystals Embedded in the Amorphous-Silicon Carbide Films Deposited by Cat-CVD at Low Temperature for Optoelectronics Applications, ECS Trans. 25, 105 (2009).

[24]  K.-M. Lee, J.-D. Hwang, Y.-J. Lee, S.-J. Kim, M.-K. Han, S. Jang, M. Han, S. Won, J. Sok, K. Park, and W.-S. Hong, Excimer Laser Annealing Effects of Silicon-Rich Silicon Nitride Films Prepared by Using Catalytic Chemical Vapor Deposition, ECS Trans. 25, 111 (2009).

[23]  J. Rho, S. Jang, Y. D. Ko, S. Kang, D.-W. Kim, J.-S. Chung, M. Kim, M. Han, and E. Choi, Photoluminescence Induced by Thermal Annealing in SrTiO3 Thin Film, Appl. Phys. Lett. 95, (2009).

- 2008 -

[22]  E. Kim, K. Kim, D. Son, J. Kim, K. Lee, M. Han, S. Won, J. Sok, W. S. Hong, and K. Park, Nonvolatile Memory Characteristics of Metallic Nanodots as Charge-Storage Nodes, Microelectron. Eng. 85, 2366 (2008).

[21]  J. Joo, S. Jang, K. Jung, C. Ko, and M. Han, Strong Luminescence and Easy Color Control for SiOx Thin Films by Using RF Magnetron Sputtering, J. Korean Phys. Soc. 53, 1685 (2008).

[20]  S. Jang, C. Ko, J. Joo, K. Jung, M. Han, E. Kim, and K. Park, Effects of Annealing on the Chemical States and the Luminescence Properties of Nitrogen-Controlled Silicon-Nitride Films, J. Korean Phys. Soc. 53, 1622 (2008).

- 2007 -

[19]  K. Kim, E. Kim, M. Bae, D. Son, J. Lee, M. Han, J. Sok, and K. Park, Silicon Nanocluster Formation by a Pulse-Type Gas Feeding Technique in the LPCVD System for the Nonvolatile Memory Applications, MRS Online Proc. Libr. 997, 0997 (2007).

[18]  S. Lee, S.-H. Jeon, C.-H. Ko, M.-S. Han, M.-G. Jang, S.-J. Lee, and K.-W. Park, Change of Schottky Barrier Height in Er-Silicide/p-Silicon Junction, J. Korean Vac. Soc. 16, 197 (2007).

[17]  C. Park, K. Kim, E. Kim, J. Sok, K. Park, and M. Han, Si Nanocluster Growth Using a Digital Gas-Feeding Method in the LPCVD System and Its Charge Storage Effect, Mater. Sci. Eng. B 140, 103 (2007).

- 2006 -

[16]  C. Ko, J. Joo, M. Han, B. Y. Park, J. H. Sok, and K. Park, Annealing Effects on the Photoluminescence of Amorphous Silicon-Nitride Films, Journal-Korean Phys. Soc. 48, 1277 (2006).

- 2004 -

[15]  C. HAM, H. HAN, C. KO, M. HAN, and K. PARK, CORRELATION OF METAL-SILICON INTERFACE STATES TO THE SCHOTTKY BARRIER HEIGHT AND THE FABRICATION OF SCHOTTKY JUNCTION DIODE, in Proceedings of Asia Conference on Nanoscience and Nanotechnology Abstracts Book (2004).

[14]  M.-C. Jung and M. Han, Chemical and Structural Stabilities of SiNx Nano-Scale Islands Formed by Ionized N2 Gas at Room Temperature, Jpn. J. Appl. Phys. 43, 1127 (2004).

- 2003 -

[13]  J. S. Kim, H. I. Kang, W. N. Kim, J. I. Kim, J. C. Choi, H. L. Park, G. C. Kim, T. W. Kim, Y. H. Hwang, S. I. Mho, M. C. Jung, and M. Han, Color Variation of ZnGa2O4 Phosphor by Reduction-Oxidation Processes, Appl. Phys. Lett. 82, 2029 (2003).

[12]  M. C. Jung, T. G. Lee, Y. J. Park, S. H. Jun, J. Lee, M. Man, J. S. Jeong, and J. Y. Lee, Nanostructured Silicon Formations as a Result of Ionized N2 Gas Reactions on Silicon with Native Oxide Layers, Appl. Phys. Lett. 82, 3653 (2003).

- 2001 -

[11]  K. Cho, H. Koh, J. Park, S.-J. Oh, H.-D. Kim, M. Han, J.-H. Park, C. T. Chen, Y. D. Kim, J.-S. Kim, and B. T. Jonker, X-Ray Absorption Spectroscopy Study of Diluted Magnetic Semiconductors: Zn1−xMxSe(M=Mn, Fe, Co) and Zn1−xMnxY(Y=Se, Te), Phys. Rev. B 63, 155203 (2001).

- 1995 -

[10]  P. Mrozek, Y. Sung, M. Han, M. Gamboa-aldeco, A. Wieckowski, C. Chen, and A. A. Gewirth, Coadsorption of Sulfate Anions and Silver Adatoms on the Au(111) Single Crystal Electrode. Ex Situ and in Situ Comparison, Electrochim. Acta 40, 17 (1995).

[9]  P. A. Rikvold, M. Gamboa-Aldeco, J. Zhang, M. Han, Q. Wang, H. L. Richards, and A. Wieckowski, Computational Lattice-Gas Modeling of the Electrosorption of Small Molecules and Ions, Surf. Sci. 335, 389 (1995).

[8]  E.-J. Cho, S. Lee, S.-J. Oh, M. Han, Y. S. Lee, and C. N. Whang, Unoccupied States and Charge Transfer in Cu-Pd Alloys Studied by Bremsstrahlung Isochromat Spectroscopy, x-Ray Photoelectron Spectroscopy, and LIII Absorption Spectroscopy, Phys. Rev. B 52, 16443 (1995).

[7]  T.-U. Nahm, M. Han, S.-J. Oh, J.-H. Park, J. W. Allen, and S.-M. Chung, Partial Spectral Weights of Disordered CuxPd1−x Alloys Including the Photoemission Matrix-Element Effect, Phys. Rev. B 51, 8140 (1995).

- 1994 -

[6]  P. Mrozek, M. Han, Y.-E. Sung, and A. Wieckowski, Sulfate Adsorption on a Au(111) Electrode Studied by AES, CEELS, LEED and Cyclic Voltammetry, Surf. Sci. 319, 21 (1994).

- 1993 -

[5]  M. Han, S. ‐J. Oh, J. H. Park, and H. L. Park, X‐ray Photoelectron Spectroscopy Study of CaS:Eu and SrS:Eu Phosphors, J. Appl. Phys. 73, 4546 (1993).

[4]  T.-U. Nahm, M. Han, S.-J. Oh, J.-H. Park, J. W. Allen, and S.-M. Chung, Influence of Matrix Element Effects in Determining the Density of States from Photoemission Spectra: Cu-Pd Alloy, Phys. Rev. Lett. 70, 3663 (1993).

[3]  M. Han, P. Mrozek, and A. Wieckowski, X-Ray-Photoelectron-Spectroscopy and Auger-Electron-Spectroscopy Study of Ultrathin Palladium Films on a Pt(111) Substrate, Phys. Rev. B 48, 8329 (1993).

[2]  I.-S. Yang, Y. J. Wee, S.-J. Kim, K. Nahm, C. K. Kim, M. Han, W. C. Yang, and S.-J. Oh, Comparison of YBa2Cu3−xZnxO7 and Er1−yPryBa2Cu3O7 Systems: Raman and XPS Studies, Phys. Rev. B 48, 7570 (1993).

- 1988 -

[1]  J. Park, S. Ryu, M. S. Han, and S. J. Oh, Charge-Transfer Satellites in the 2p Core-Level Photoelectron Spectra of Heavy-Transition-Metal Dihalides, Phys. Rev. B 37, 10867 (1988).