Sample preparations

RF/DC magnetron sputtering

• 1 RF gun and 2 DC guns

• Geometry: sample at the bottom

• With a load lock chamber
  (Base pressure in the main chamber is maintained below ~5e-8 Torr)

• sample temperature: RT-600 ℃

• Available targets: Si, Si3N4, Te, Mo, Al, Fe, Cu, Ag, Co, BN, Zr

RF sputtering

• 1 RF gun 

• Geometry: sample at the top

• Without a load lock chamber

• sample temperature: RT-600 ℃

• Available targets: Si, Si3N4, Te, Mo, Al, Fe, Cu, Ag, Co, BN, Zr

Furnace

• Annealing

• Temperature: up to 1100 °C

• Gas: H2, Ar, N2, O2

Photomask aligner (Home-made)

• XYZR manual microstage

• Exposure source: EPSON EB-S12 beam projector