Atomic layer deposition (ALD) is one of the most advanced deposition techniques in semiconductor or display fields. Owing to the self-limiting reaction of ALD, unusual properties such as large-area uniformity, excellent conformality, and sub-nanometer thickness controllability can be identified.

Thermal Atomic layer etching (ALE), based on thermochemical reaction between the surface and precursors, enables atomic-scale etching. As the device is getting smaller and the structure of the device becomes more complex than before, ALE becomes more and more promising for nanoscale devices without inducing damages.

ALD and ALE play pivotal roles in fabricating advanced semiconductor devices and nanoscale structures, ensuring superior performance and reliability. Together, ALD and ALE are anticipated to enhance device performance, reliability, and scalability in advanced semiconductor manufacturing and nanoscale device fabrication.