Improvement of Threshold voltage shift distribution characteristic in double layer NiSi2 nanocrystals for nano_floating gate memory

Sung-Jin Choi, Donghyoun Kim, Wangyu Song, Jihun Kwon, and Seung-Beck Lee

 IEEE NANO 2010-Joint Symposium with NANO KOREA  2010 August 19, 2010 KINTEX, Korea