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Nanoelectronic Device Laboratory

  • 연구실 소개

  • 구성원 소개

  • 연구실 사진첩

  • 연구실 위치

Nanoelectronic Devices Laboratory

 Lab Introduction

 The aim of the Nanoelectronic Device Laboratory is to combine conventional state-of-the-art nanoscale device fabrication techniques with newly developed nanoscale materials technology for the research and development of novel devices with potential for various commercial applications.

 There are many technical and fundamental challenges that must be overcome for the further development of nanoscale semiconductor devices, high performance sensors, display devices, and on-chip microfluidic devices. We aim to present new solutions to known problems and propose devices with novel operating principles through interdisciplinary research, approached from the nanotechnology perspective, and by doing so educate the future interdisciplinary technology leaders in the nanoelectronic device industry.


 Current topics under research are

1) Nanoelectronic Devices

: Next generation non-volatile memory, and flexible and transparent thin-film transistors

2) Novel high performance sensors

: Tactile pressure sensors, flexible pressure sensors, Tensile strain sensors, and Toxic gas sensors

3) Microelectronmechanical system (MEMS)

: Micro-cantilever particle detector, On-chip microfluidic system


 We have on-going collaborations with many Korean and Foreign Institutions, such as Korea University, Pusan National University, Sun Moon University, University of Cambridge and Rutgers University, and are actively pursuing other complementary collaborations with institutions of proven excellence.

한국어

Location

133-791, 서울시 성동구 행당동 17번지 한양대학교 융합전자공학부 나노전자소자 연구실 (Tel : 02-2282-1676, Fax : 2294-1676)
Office : 서울 성동구 왕십리로 222  공업센터별관 보일러동 611-2 / Lab : 서울 성동구 왕십리로 222 퓨전테크센터(FTC) 612

Copyright 2004 NDL, Nanoelectronic Devices Laboratory. All rights are reserved. 
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