Research interest I: Scanning Probe Microscopy Characterisations
The characterization of materials plays a crucial role in the field of photovoltaic (PV) research, enabling a comprehensive understanding of the various factors that influence performance. It is essential to establish a clear connection between the properties of the underlying materials and the performance of the devices. To achieve this, several non-destructive techniques provide spatially resolved characterization, offering insights into the charge carrier properties of local structures and defects. Luminescence techniques leverage a radiative phenomenon that involves the emission of photons from semiconductors. These techniques have gained wide popularity for rapid imaging of large silicon wafers. They offer spatial resolutions ranging from 100nm (u-PL) to a few nanometers, enabling detailed analysis at the microscopic level. By contrast, scanning probe microscopy (SPM) techniques employ sharp tips that scan extremely close to or make contact with the semiconductor surface. This approach provides spatial resolutions ranging from 0.1nm (STM) to several nanometers (KPFM and C-AFM). In addition to imaging capabilities, SPM techniques allow the exploration of morphology-dependent functional properties, including piezoelectric properties, thermal properties, magnetic properties, mechanical properties, and more.
*See our publications: