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Research Publications
Publications color Coded by research theme:
(a) Device Engineering on 2D semiconductors
(b) Sub-thermionic (SS<60 mV/dec) transistors
(c) Neuromorphic devices
(d) Quantum devices
At IIT Hyderabad
Publications
Rallapalli A., Bhattacharjee S. “System-level Performance of MoS2 Synaptic Transistors in MLP and DNN Architectures”. 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2023.
Gauhar, G. A., Bhattacharjee, S., & Badami, O. (2024). Insights into Sub‐Thermionic Transport in Schottky Barrier FETs. Advanced Theory and Simulations, 7(8), 2400202.
L. Peddaboina, ... S. Bhattacharjee et. al. “Modelling of Stochastic Switching in Monolayer MoS2 RRAMs with Kinetic Monte Carlo” CIMITEC 2024 (ORAL presentation) Italy 2024.
Peddaboina, L., Agrawal, K., Kumar, P., Hegde, G., Badami, O., & Bhattacharjee, S. (2025). A Variability‐Aware Behavioral Model of Monolayer MoS2 RRAM for Tunable Stochastic Sources. Advanced Theory and Simulations, 2401235
Peddaboina, K., Kumar, P.., Badami, O., & Bhattacharjee, S. (2025). "A Kinetic Monte Carlo Model for Stochatic Switching in Monolayer MoS2 RRAMs" IEEE SISPAD, Grenoble, France.
Patents
S. Bhattacharjee, S. Gayen. C. M. Reddy “Method and apparatus for a device exhibiting sustained electronic properties post electrical and mechanical stresses.” 202541044931/16219-350 (2025)
2. S. Bhattacharjee, L. Peddaboina, O.Badami, P. Kumar “A true random bitstream generator and a method of generating a true random bitstream” 202541052796/ 16219-355 (2025)
Pre - IIT Hyderabad
A. Patents
1. S. Bhattacharjee, K. L. Ganapathi, S. Mohan, N. Bhat “Programmable tunnel thermionic mode transistor ", US patent granted May, 2019, US20180343006A1 link
2. S. Bhattacharjee, K. L. Ganapathi, S. Mohan, N. Bhat “Asymmetric dual gate programmable thermionic tunnel field effect transistor", Indian PCT 201741018661, Nov, 2018
B. Journals
A Weston, E. Castanon,... S. Bhattacharjee, S. Xu, ..., A. K. Giem, R. Gorbachev et.al. “Interfacial ferroelectricity in marginally twisted 2D semiconductors" Nature Nanotechnology, 17(4), 390-395.
A. Berdyugin, N. Xin,... S. Bhattacharjee ... A. K. Giem et.al. “Out-of-equilibrium criticalities in graphene superlattices" Science, 375(6579), 430-433, 2022
P. Hauchecorne, F. Gity..., S. Bhattacharjee, P.K. Hurley and T. Baron et.al. Gallium Selenide Nanoribbons on Silicon Substrates for Photodetection ACS App. Nano Mater. 10.1021/asanm.1c01141 (2021).
J. Lin, S. Monaghan, N. Shakuja... N. Bhat, P.K. Hurley, S. Bhattacharjee et.al. “Large Area Growth of MoS2 at Temperatures Compatible with Integrating Back-End-of-Line Functionality" 2D Materials, 10.1088/2053-1583/abc460 (2021) Last, organizing author
S. Bhattacharjee, R. Wigchering, H. Manning, J.J. Boland, P. K. Hurley “Emulating synaptic response in n-and p-channel MoS2 transistors by utilizing charge trapping dynamics" Nature Scientific Reports 10 (1), 1-8 (2020)
S. Bhattacharjee, E. Caruso, N. McEvoy, ... P. K. Hurley et.al. “Insights into Multilevel Resistive Switching in Monolayer MoS2" ACS Applied Materials & Interfaces 12 (5), 6022-6029 (2020)
S. Bhattacharjee, K.L. Ganapathi, A. Sharma, S. Mohan, N. Bhat “An Adaptive Transport MoS2FET with sub-thermionic conduction and high ON currents" IEEE Transactions On Nanotechnology 18, 1071-1078 (2019)
G. Mirabelli, L. Walsh, F. Gity, S. Bhattacharjee, ... P. K. Hurley, R. Duffy et.al. “Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation" ACS Omega 4 (17), 17487-17493 (2019)
S. Bhattacharjee, R. Vatsayan K.L. Ganapathi, S. Mohan, N. Bhat “Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2" Adv. Electronic Mater.,5, 1800863 (2019)
C. O’Dwyer, L. Walsh, F. Gity, S. Bhattacharjee, P. K. Hurley “Two-Dimensional Materials and their Role in Emerging Electronic and Photonic Devices" The Electrochemical Society Interface 27, no. 4 (2018): 53-58. Invited Review Article.
S. Bhattacharjee, K. L. Ganapathi, S. Mohan and N. Bhat “A sub-thermionic MoS2 FET with tunable transport”, Appl. Phys. Lett. 111, 163501 (2017) Editor’s Pick Article.
S. Bhattacharjee, K. L. Ganapathi, S. Mohan and N. Bhat “Interface Engineering for the Integration of High- Dielectrics and Metal Contacts on 2D Semiconductors”, ECS Trans. 2017 volume 80, issue 1, 101-1
S. Bhattacharjee, K. L. Ganapathi, H. Chandrasekar, T. Paul, S. Mohan, A. Ghosh, S. Raghavan and N. Bhat “Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High-Performance Multilayer MoS2 FETs”, Advanced Electronic Materials 3, no. (2017).
S. Bhattacharjee, K. L. Ganapathi, D. Nath and N. Bhat “Surface States Engineering of metal/MoS2 contacts using Sulfur Treatment for Reduced Contact Resistance and Variability”, IEEE Transactions on Electron Devices 63, no. 6 (2016): 2556-2562.
S. Bhattacharjee, K. L. Ganapathi, D. Nath and N. Bhat “Intrinsic limit for Contact Resistance in exfoliated multilayered MoS2 FET”, IEEE Electron Device Letters 37, no. 1 (2016): 119-122.
K. L. Ganapathi, S. Bhattacharjee, S. Mohan and N. Bhat “High-Performance HfO2 Back Gated Multilayer MoS2 transistors”, IEEE Electron Device Letters 37, no. 6 (2016): 797-800.
H. Chandrasekhar, K. L. Ganapathi, S. Bhattacharjee, N. Bhat and D. N. Nath “Optical Phonon limited high field transport in layered materials”, IEEE Transactions on Electron Devices 63, no. 2 (2016): 767-772.
I. Jose, S. Bhattacharjee, K. Deodhar and U. Desai “Early detection of breast cancer: Synthesis and characterization of novel target specific NIR-fluorescent estrogen conjugate for Molecular Optical Imaging", Journal of fluorescence 21, no. 3 (2011): 1171-1177.
C. Conference
1. S. Bhattacharjee, P.K. Hurley et.al. “Two- and Three-terminal neuromorphic devices with 2D materials” 21st IEEE Nano, June 2021, Montreal Invited Talk.
2. A. Berdyugin, N. Xin, S. Bhattacharjee ... A. Giem et.al. “ Non-linear electron transport in two-dimensional moiré superlattices" (American Physical Society (APS), March 2021, Session M42,)
3. S. Bhattacharjee, P.K. Hurley et.al. “Multi-Level Non-Volatile Memory in Au/Monolayer MoS2/Au Structures” 238th ECS Meeting, Mar 2020, Vancouver Invited Talk.
4. P. Hauchecorne, S. Bhattacharjee, ... P. Hurley, T. Baron et.al. “Gallium Selenide NRs for photodetection applications grown by MOCVD on 300 nm substrates" (Graphene Week, Oct 2020, online)
5. S. Bhattacharjee, P.K. Hurley et.al. “Charge trapping MoS2 synaptic transistor for neuromorphic computing”, ORAL Presentation, XXth International Workshop on Physics of Semiconductor Devices: IWPSD 2019,Dec 2019, Kolkata, India
6. S. Bhattacharjee, P.K. Hurley et.al. “Re-doped and Nb-doped MoS2 synaptic transistors for neuromorphic computing”, ORAL Presentation, 50th IEEE Semiconductors Interfaces Specialist Conference (SISC), Dec 2019, San Diego, CA
7. G. Mirabelli, S. Bhattacharjee, P.K. Hurley et.al. “Effects of Forming Gas annealing on large area PtSe2”, European Materials(E-MRS), June 2019, Nice, France
8. S. Bhattacharjee, P.K. Hurley et.al. “Photoresponse and memristive action in vertical metal/MoS2/metal out-of-plane junctions”, 4th International Conference on Emerging Electronics (ICEE), Dec 2018, Bangalore
9. S. Bhattacharjee, N. Bhat, et.al. “High Performance, Sub-thermionic MoS2 transistors using tunable Schottky contacts”, 76th Device Research Conference (DRC), June 2018, UC Santa Barbara, CA Invited Talk.
10. S. Bhattacharjee, et.al. “Optoelectronics based on Vertical Transport in Multi-layer MoS2”, 76th Device Research Conference (DRC), June 2018, UC Santa Barbara, CA.
11. S. Bhattacharjee, et.al. “Realizing P-FETs and Photodiodes on MoS2 through area-selective p-Doping via Vacancy Engineering”, 75th Device Research Conference (DRC), June 2017, Univ. Notre Dame, IL.
12. S. Bhattacharjee, et.al. “Functionalisation-free e-beam PVD based 30 nm HfO2 top gate for high performance MoS2 FETs”, 3 rd International Conference on Emerging Electronics (ICEE), IIT Bombay, December 2016 Oral Presentation.
13. S. Bhattacharjee, et.al. “High Performance Functionalisation-free HfO2 Top-Gate for MoS2 FETs with 6 nm EOT and SSmin 60 mV/decade”, ORAL Presentation, 47th IEEE Semiconductors Interfaces Specialist Conference (SISC), Dec 2016, San Diego, CA.
14. S. Bhattacharjee, et.al. “An All Nitrite Dielectric Environment for High Performance MoS2 FETs”, ORAL Presentation, 47th IEEE Semiconductors Interfaces Specialist Conference (SISC), Dec 2016, San Diego, CA.
15. J. H. Park, A. Rai, I. Kwak, S. Bhattacharjee, K. L. Ganapathi, D. N. Nath, N. Bhat, S. Banerjee, and A. C. Kummel “Passivation of Transition Metal Chalcogenide Surface via Sulfur Laye to Enhanced Metal Contact", TECHCON (SRC), 2016.
16. S. Bhattacharjee, et.al. “Surface States Engineering and Schottky Barrier Height Reduction in metal/MoS2 contacts through Sulfur Treatment", ORAL Presentation: 46th IEEE Semiconductors Interfaces Specialist Conference (SISC), Dec 2015, Arlington, VA, http://arxiv.org/abs/1508.03795.
17. H. Chandrasekhar, K. L. Ganapathi, S. Bhattacharjee, et.al. “Optical Phonon limited high field transport in layered materials”, Symposium EE, MRS Fall Meet 2015, Boston MA, USA.
18. S. Bhattacharjee and I. Jose ‘‘Early detection of breast cancer: 3D modeling, simulation and in-vitro studies to characterize the in-vivo performance of synthesized novel NIR-f estrogen conjugate dye", Optical Tomography and Spectroscopy of Tissues IX (SPIE Photonics West 2011), (SPIE-7896-107).
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