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Publication
Optic Express, Vol. 38, Issue 18, pp. 29536-29557 (2023)
Spoof-surface-plasmon-polariton (SSPP) interconnects are potential candidates for next-generation interconnects to satisfy the growing demand for high-speed, large-volume data transfer in chip-to-chip and inter-chip communication networks. As in any interconnect, the viability and efficiency of the modulation technique employed will play a crucial role in the effective utilization of SSPP interconnects. In light of the lack of a comprehensive platform for the performance analysis of SSPP signal modulation, this work presents a theoretical framework that contributes to the following:
1) predictions of the maximum attainable modulation speed, limited by geometric dispersion in SSPP waveguide,
2) quantification of the fundamental trade-off relation between modulation speed and energy-efficiency for an arbitrary design of SSPP structure,
3) extension of the analysis over a broad category of SSPP modulation technique.
Fig. 1. Schematic illustration of the SSPP interconnect with modulator
On-chip Channel Conductance based Modulation of Spoof Surface Plasmon Polariton Interconnects
CLEO: Science and Innovations 2022, San Jose, California United States
Fig: SSPP interconnect structure
Spoof Surface Plasmon Polariton (SSPP)- which is a new class of quasiparticle accommodated by corrugated metallic surface - offers a novel means of realizing high speed inter-chip communication with minimal energy budget. In order to fully exploit the benefits of SSPP interconnects, on-chip modulation of the high-frequency signal is indispensable. Though different techniques of SSPP signal modulation have been reported, issues related to design complexity and compatibility with existing CMOS-based process technologies remain. In view of these limitations, the present study proposes a novel scheme of modulating SSPP interconnects by controlling the channel conductance of a conventional MOSFET incorporated in between the metallic groove of the interconnect.
Undergrad Research
Thesis Title: Modulation of SSPP for High-Speed Chip-to-Chip Communication
SSPP (Spoof Surface Plasmon Polariton) interconnector can be used as off chip communication. We can get high speed data transmission using this channel as data are transmitted through EM wave. Data signal can be modulated on this channel by using variable resistance (MOSFET). Our main purpose was to modulated our signal in SSPP interconnector.
Fig: Conceptual figure of the interconnect for the purpose of Modulation
M.Sc. Research
Thesis Topic: Quantum well based Electro-Absorption Modulator [ongoing]
Electro-Absorption Modulator (EAM) can be designed by using the property of Quantum Confined Stark Effect (QCSE) of a quantum well. We primarily focus on the InGaN material for designing the Quantum well. Then, we are trying to build an interconnect module to verify the different figure of merits of this EA Modulator.
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