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Publication
Optic Express, Vol. 38, Issue 18, pp. 29536-29557 (2023)
Spoof-surface-plasmon-polariton (SSPP) interconnects are potential candidates for next-generation interconnects to satisfy the growing demand for high-speed, large-volume data transfer in chip-to-chip and inter-chip communication networks. As in any interconnect, the viability and efficiency of the modulation technique employed will play a crucial role in the effective utilization of SSPP interconnects. In light of the lack of a comprehensive platform for the performance analysis of SSPP signal modulation, this work presents a theoretical framework that contributes to the following:
1) predictions of the maximum attainable modulation speed, limited by geometric dispersion in SSPP waveguide,
2) quantification of the fundamental trade-off relation between modulation speed and energy-efficiency for an arbitrary design of SSPP structure,
3) extension of the analysis over a broad category of SSPP modulation technique.
Fig. 1. Schematic illustration of the SSPP interconnect with modulator
On-chip Channel Conductance based Modulation of Spoof Surface Plasmon Polariton Interconnects
CLEO: Science and Innovations 2022, San Jose, California United States
Fig: SSPP interconnect structure
Spoof Surface Plasmon Polariton (SSPP)- which is a new class of quasiparticle accommodated by corrugated metallic surface - offers a novel means of realizing high speed inter-chip communication with minimal energy budget. In order to fully exploit the benefits of SSPP interconnects, on-chip modulation of the high-frequency signal is indispensable. Though different techniques of SSPP signal modulation have been reported, issues related to design complexity and compatibility with existing CMOS-based process technologies remain. In view of these limitations, the present study proposes a novel scheme of modulating SSPP interconnects by controlling the channel conductance of a conventional MOSFET incorporated in between the metallic groove of the interconnect.
Undergrad Research
Thesis Title: Modulation of SSPP for High-Speed Chip-to-Chip Communication
There are two major type of interconnector is used in communication purposes in electronic devices. One is electrical interconnector which is best option for on chip communication and another one is optical interconnector; this type of interconnect is used for long distance communications. But, for mm distance data communication neither electrical nor optical interconnectors perform well. So, for this range we need to find alternative way of data communication. Spoof surface plasmon polariton (SSPP) interconnector is an excellent choice as mm distance interconnector for its desirable electrodynamic properties. SSPP was introduced very recently and many of its characteristics aren’t explore yet. The main purpose of this research work is that how we can modulate data signals. We observe the effect of changing various parameters of SSPP interconnector on transmission bandwidth. Changing SSPP interconnector length, groove height, conductivity of interconnect and modulating resistance between two grooves all have effect on transmission bandwidth. That means, we can tune data signal by varying all of these parameters. But it isn’t possible to change geometrical parameter after fabrication. Like, we can’t change SSPP groove height or SSPP length after fabrication. But we can change modulating resistance between two grooves after fabrication using a variable resistor (MOSFET). So, changing modulating resistance is the most efficient way for tuning data signal in SSPP channel. Finally, we also explored time domain behavior of data signals.
Fig: Conceptual figure of the interconnect for the purpose of Modulation
M.Sc. Research
Fig: (A) 3D view of a nanowire structure,
Fig: (B) 2D-view of cylindrical nanowire (L=1 um, d=60 nm, a=5 nm)
Fig: (C) Structure of a single nanowire with GaN/InGaN multiple Quantum Well
Thesis Topic: Design and analysis of iii nitride nanowire-based electroabsorption modulators for on-chip optical communication
The dramatic improvement in modern short-distance and long-distance optical telecommunication network performance is a result of high-speed photonic and optoelectronic devices. Advanced material growth and device fabrication technologies have impressively matured, and the development of photonic and optoelectronic integrated circuits (OEICs) has engaged considerable efforts to achieve well beyond conventional perspectives. This innovation is critical to the development of improved on-chip and off-chip high-speed optical communication systems that can transmit data more efficiently and at higher speeds. The proposed nanowire-based electroabsorption modulator is designed to modulate signals visible to the NIR region. The absorption characteristics dependent on incident light wavelength and electric field were evaluated through a self-consistent numerical method. Output characteristics of a nanowire system are calculated at the wavelengths of blue, green, and NIR regions. The study's results indicate that optimal performance can be attained by adjusting the electric field from 239 V/µm to 326 V/µm, which corresponds to the 'ON' and 'OFF' states at a wavelength of 430 nm, 460 nm, 530 nm, and 830 nm. For system-level integration, an optical interconnect system is designed to evaluate different figures of merit (FOM), such as bit error rate (BER), extinction ratio (ER), and quality factor (Q-factor).
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