Research

A. Plasma process

The semiconductor material processing industry has experienced significant success by utilizing plasmas for essential procedures such as etching and deposition. These plasmas can be created and managed within a vacuum chamber. Our laboratory explores the generation and dynamics of plasmas primarily through numerical simulations.


The performance of material processing is determined by plasma properties, including density, flux, and temperature. These properties depend on parameters such as machine geometry, vacuum pressure, applied voltages, and wall conditions. We investigate the effects of control parameters on plasma properties.

B. Plasma modeling techniques

Plasma can be described using mathematical models based on fundamental physics. We specialize in developing theoretical plasma models through single-particle analysis, kinetic analysis, and fluid analysis.


Numerical simulations, addressing the solution of governing equations for the system, present another technique for investigating plasma. Our expertise lies in developing and employing molecular dynamics (MD), particle-in-cell (PIC), and fluid simulations. The choice of modeling techniques depends on the particular plasma phenomena under investigation and the computational performance available.

C. Fundamental plasma physics

We conduct research in fundamental plasma physics to deepen understanding of plasma dynamics in both laboratory settings, such as fusion reactors (e.g., KSTAR and ITER tokamaks), and natural environments. The primary focus is on analyzing electromagnetic waves and instabilities within plasmas, utilizing state-of-the-art kinetic and fluid theories. Another central aspect involves developing transport models for thermonuclear fusion plasmas. We actively collaborate on numerical simulations to support our studies.

Research results can be found in our publications.

Feel free to inquire about our research activities, including graduate and undergraduate research programs.

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