Professor, Department of Engineering Physics,
Polytechnique Montréal
oussama.moutanabbir(at)polymtl(dot)ca
•Group IV SiGeSn semiconductors
•Isotopically engineered semiconductors
•Silicon-integrated mid-infrared devices
•Epitaxy
•Atom probe tomography
Interfaces in group IV heterostructures, Nano Lett. 22, 7080 (2022)
Epitaxy of highly relaxed GeSn semiconductors, Adv. Mater. 34, 2201192 (2022)
High-speed GeSn photodetectors, ACS Photonics 9, 1425 (2022)
Isotopically engineered germanium, Phys. Rev. Lett. 105, 026101 (2010)