Publications

My Google Scholar Profile

My Researchgate Profile

Journal Article(s)

• • 1. M. I. Khan, I. K. M. R. Rahman and Q. D. M. Khosru, "Surface Potential-Based Analytical Modeling of Electrostatic and Transport Phenomena of GaN Nanowire Junctionless MOSFET," in IEEE Transactions on Electron Devices, vol. 67, no. 9, pp. 3568-3576, Sept. 2020, doi: 10.1109/TED.2020.3011645. [Link] [IF: 2.913]

    2. I. K. M. R. Rahman, M. I. Khan and Q. D. M. Khosru, "A Rigorous Investigation of Electrostatic and Transport Phenomena of GaN Double-Channel HEMT," in IEEE Transactions on Electron Devices, vol. 66, no. 7, pp. 2923-2931, July 2019, doi: 10.1109/TED.2019.2915837. [Link] [IF: 2.913]

    3. I. K. M. R. Rahman, M. I. Khan and Q. D. M. Khosru, "Analytical Drain Current and Performance Evaluation for Inversion Type InGaAs Gate-All-Around MOSFET." (Under review)

    4. I. K. M. R. Rahman, M. I. Khan and Q. D. M. Khosru, "Electrostatic Characterization and Threshold Voltage Modeling of Inversion Type InGaAs Gate-All-Around MOSFET." (Under review)

Conference Proceeding(s)

• 1. M. I. Khan, I. K. M. Reaz Rahman and Q. D. M. Khosru, "Analytical Modeling of Capacitance-Voltage Characteristics of GaN Nanowire Junctionless MOSFET," 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO), Montreal, QC, Canada, 2020, pp. 67-72, doi: 10.1109/NANO47656.2020.9183461. [Link]

  2. I. K. M. R. Rahman, M. I. Khan, M. Mahdia and Q. D. M. Khosru, "Analytical Modeling of Electrostatic Characteristics of Enhancement Mode GaN Double Channel HEMT," 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), Portland, OR, 2018, pp. 1-4, doi: 10.1109/NMDC.2018.8605851. [Link]