Publications

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Journal Article(s)

• • 1.  H. Rana, O. Odabasi, C. Clymore, E. Shabani, Md Irfan Khan, X. Zhai et al., "High-Temperature DC-RF Performance of N-Polar Deep Recess GaN HEMT With High-k HfSiO2 Dielectric," in IEEE Transactions on Electron Devices, vol. 73, no. 6, pp. 3479-3484, June 2026.

    2. Md Irfan Khan, Tanmay Chavan, Elaheh Ahmadi, “Enhancement of doping efficiency via polarization engineering in nitrogen-polar graded AlGaN grown by plasma-assisted molecular beam epitaxy”, APL Materials, 1 June 2026; 14 (6): 061111.

    3. O. Odabasi, Md Irfan Khan et al., "High-Performance MBE-Grown N-Polar GaN HEMTs on Bulk GaN With Simplified Backbarrier," in IEEE Electron Device Letters, vol. 47, no. 6, pp. 1073-1076, June 2026.

    4. Stefan Kosanovic, Md Irfan Khan, Harsh Rana, Oguz Odabasi, Rijo Baby, Elaheh Ahmadi, “First demonstration of an N-polar high Al-content AlGaN channel HEMT grown by plasma-assisted molecular beam epitaxy”, APL Electronic Devices 1 March 2026; 2 (1): 016128. 

    5. Oguz Odabasi, Md Irfan Khan, Sandra Diez, Kamruzzaman Khan, Tanmay Chavan, Elaheh Ahmadi, “Record-high electron mobility at near pinch-off in N-polar GaN HEMT structures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy”, Appl. Phys. Lett. 30 September 2025; 127 (13): 13210.

    6. O. Odabasi, Md Irfan Khan, X. Zhai, H. Rana and E. Ahmadi, "Enhancement Mode N-Polar Deep Recess GaN HEMT With Record Small Signal Performance," in IEEE Electron Device Letters, vol. 46, no. 9, pp. 1505-1508, Sept. 2025.

    7. O. Odabasi, Md Irfan Khan, K. Khan and Elaheh Ahmadi, ”Demonstration of Normally-Off N-Polar GaN Deep Recess HEMT,” in IEEE Microwave and Wireless Technology Letters, vol. 34, no. 12, pp. 1335-1338, Dec. 2024.

    8. Md Irfan Khan, Cindy Lee and Elaheh Ahmadi,”Demonstration of controllable Si doping in N-polar AlN using plasma-assisted molecular beam epitaxy”, Appl. Phys. Lett. 5 February 2024; 124 (6): 062107.

    9. K. Khan, C. Wurm, Henry Collins, Vineeta R. Muthuraj, Md Irfan Khan, Cindy Lee, Stacia Keller and Elaheh Ahmadi, ”Demonstration of 82% relaxed In0.18Ga0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy”, Physica Scripta, Volume 99, Issue 1, id.015027, 10 pp.

    10. G. A. Alvarez, J. Casamento, Len van Deurzen, Md Irfan Khan, K. Khan, E. Jeong, Elaheh Ahmadi, Huili Grace Xing, D. Jena and Zhiting Tian, ”Thermal conductivity enhancement of aluminum scandium nitride grown by molecular beam epitaxy”, Materials Research Letters, 11:12, 1048-1054 (2023).

    11. Xinyi Xia, Jian-Sian Li, Md Irfan Khan, Kamruzzaman Khan, Elaheh Ahmadi, David C. Hays, Fan Ren, and S. J. Pearton , ”Band alignment of sputtered and atomic layer deposited SiO2 and Al2O3 on ScAlN”, Journal of Applied Physics 132, 235701 (2022).

    12. Xinyi Xia, Jian-Sian Li, Zhuoqun Wen, Kamruzzaman Khan, Md Irfan Khan, Elaheh Ahmadi, Yuichi Oshima, David C. Hays, Fan Ren, S. J. Pearton, ”Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3”, Journal of Vacuum Science and Technology A; 41 (2): 023205 (2023).

    13. I. K. M. Reaz Rahman, Md. Irfan Khan, and Quazi D. M. Khosru , ”Analytical drain current and performance evaluation for inversion type InGaAs gate-all-around MOSFET”, AIP Advances 11, 065108 (2021).

    14. M. I. Khan, I. K. M. R. Rahman and Q. D. M. Khosru, "Surface Potential-Based Analytical Modeling of Electrostatic and Transport Phenomena of GaN Nanowire Junctionless MOSFET," in IEEE Transactions on Electron Devices, vol. 67, no. 9, pp. 3568-3576, Sept. 2020, doi: 10.1109/TED.2020.3011645. [Link] [IF: 2.913]

    15. I.K.M.R. Rahman, Md Irfan Khan and Q.D.M. Khosru, “Electrostatic characterization and threshold voltage modeling of inversion type InGaAs gate-all-around MOSFET”. J Comput Electron 20, 1504–1512 (2021).

    16. I. K. M. R. Rahman, M. I. Khan and Q. D. M. Khosru, "A Rigorous Investigation of Electrostatic and Transport Phenomena of GaN Double-Channel HEMT," in IEEE Transactions on Electron Devices, vol. 66, no. 7, pp. 2923-2931, July 2019, doi: 10.1109/TED.2019.2915837.  [Link] [IF: 2.913]                        

Conference Proceeding(s)

• 1. Elaheh Ahmadi and Md Irfan Khan, “Epitaxial Growth and Doping of N-Polar AlN by Plasma-Assisted Molecular Beam Epitaxy”, Electrochemical Society Meeting Abstracts 245, Issue 32, page 1570, August 2024.

  2. M. I. Khan, I. K. M. Reaz Rahman and Q. D. M. Khosru, "Analytical Modeling of Capacitance-Voltage Characteristics of GaN Nanowire Junctionless MOSFET," 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO), Montreal, QC, Canada, 2020, pp. 67-72, doi: 10.1109/NANO47656.2020.9183461. [Link]

  3. I. K. M. R. Rahman, M. I. Khan, M. Mahdia and Q. D. M. Khosru, "Analytical Modeling of Electrostatic Characteristics of Enhancement Mode GaN Double Channel HEMT," 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), Portland, OR, 2018, pp. 1-4, doi: 10.1109/NMDC.2018.8605851.  [Link]

PRESENTATIONS AT CONFERENCES/WORKSHOPS/SYMPOSIUM 

• 1. Oral presentation on “Demonstration of Controllable Si Doping in N-polar AlN by Plasma-Assisted Molecular Beam Epitaxy”, at the 14th International Conference on Nitride Semiconductors (ICNS-14) to be held in Fukuoka, Japan, November 12-17, 2023.

  2. Poster presentation on “Investigation of Polarization Doping in Nitrogen Polar Graded AlxGa1-xN (1>x>0.5) Film by Plasma-Assisted Molecular Beam Epitaxy”, at the 14th International Conference on Nitride Semiconductors (ICNS-14) to be held in Fukuoka, Japan, November 12-17, 2023.