論文
2024年以前
1. N. Okada, R. Hidaka, T. Kowaki, T. Saito, Y. Sugawara, D. Yokoe, Y. Yao, Y. Ishikawa, S. Kurai, Y. Yamada, and K. Tadatomo, J. Appl. Phys. 136, 025705 (2024). [DOI:10.1063/5.0198321]
2. Y. Ishikawa, Y. Sugawara, Y. Yao, M. Miyoshi, and T. Egawa, J. Mater. Sci. 59, 2974 (2024). [DOI:10.1007/s10853-024-09392-z]
3. Y. Yao, Y. Sugawara, K. Sasaki, A. Kuramata, and Y. Ishikawa, J. Appl. Phys. 134, 215106 (2023). [DOI:10.1063/5.0180389]
4. Y. Yao, Y. Tsusaka, K. Hirano, K. Sasaki, A. Kuramata, Y. Sugawara, and Y. Ishikawa, J. Appl. Phys. 134, 155104 (2023). [DOI:10.1063/5.0169526]
5. T. Kowaki, W. Matsumura, K. Hanasaku, R. Okuno, D. Inahara, S. Matsuda, S. Kurai, Y. Yao, Y. Ishikawa, N. Okada, and Y. Yamada, Phys. Status Solidi A 220, 2200872 (2023). [DOI:10.1002/pssa.202200872]
6. D. Inahara, S. Matsuda, W. Matsumura, R. Okuno, K. Hanasaku, T. Kowaki, M. Miyamoto, Y. Yao, Y. Ishikawa, A. Tanaka, Y. Honda, S. Nitta, H. Amano, S. Kurai, et al., Phys. Status Solidi A 220, 2200871 (2023). [DOI:10.1002/pssa.202200871]
7. Y. Ishikawa, Y. Sugawara, D. Yokoe, K. Sato, Y. Yao, K. Watanabe, and T. Okawa, J. Mater. Sci. 58, 9221 (2023). [DOI:10.1007/s10853-023-08596-z]
8. Y. Yao, K. Hirano, K. Sasaki, A. Kuramata, Y. Sugawara, and Y. Ishikawa, J. Am. Ceram. Soc. 106, 5487 (2023). [DOI:10.1111/jace.19156]
9. S. Isaji, I. Maeda, N. Ogawa, R. Kosaka, N. Hasuike, T. Isshiki, K. Kobayashi, Y. Yao, and Y. Ishikawa, J. Electron. Mater. 52, 5093 (2023). [DOI:10.1007/s11664-023-10363-4]
10. K. Kakimoto, I. Takahashi, T. Tomida, K. Kamada, Y. Yao, S. Nakano, and A. Yoshikawa, J. Cryst. Growth 609, 127126 (2023). [DOI:10.1016/j.jcrysgro.2023.127126]
11. Y. Yao, D. Wakimoto, H. Miyamoto, K. Sasaki, A. Kuramata, K. Hirano, Y. Sugawara, and Y. Ishikawa, Scr. Mater. 226, 115216 (2023). [DOI:10.1016/j.scriptamat.2022.115216]
12. L. You, W. Matsumura, K. Ataka, S. Matsuda, D. Inahara, K. Hanasaku, R. Okuno, T. Kowaki, Y. Yao, Y. Ishikawa, S. Kurai, N. Okada, K. Tadatomo, and Y. Yamada, Jpn. J. Appl. Phys. 62, SA1018 (2022). [DOI:10.35848/1347-4065/ac9532]
13. Y. Ishikawa, Y. Sugawara, Y. Yao, H. Takeda, H. Aida, and K. Tadatomo, J. Phys. D: Appl. Phys. 55, 485304 (2022). [DOI:10.1088/1361-6463/ac96fd]
14. Y. Yao, K. Hirano, Y. Sugawara, and Y. Ishikawa, Semicond. Sci. Technol. 37, 115009 (2022). [DOI:10.1088/1361-6641/ac974b]
15. Y. Yao, Y. Tsusaka, K. Sasaki, A. Kuramata, Y. Sugawara, and Y. Ishikawa, Appl. Phys. Lett. 121, 012105 (2022). [DOI:10.1063/5.0098942]
16. Y. Ishikawa, Y. Sugawara, Y. Yao, H. Takeda, H. Aida, and K. Tadatomo, J. Appl. Phys. 131, 225303 (2022). [DOI:10.1063/5.0084495]
17. Y. Yao, Y. Sugawara, K. Sato, N. Okada, K. Tadatomo, and Y. Ishikawa, J. Cryst. Growth 592,
126748 (2022). [DOI:10.1016/j.jcrysgro.2022.126748]
18. Y. Yao, K. Hirano, Y. Sugawara, K. Sasaki, A. Kuramata, and Y. Ishikawa, APL Mater. 10, 051101 (2022). [DOI:10.1063/5.0088701]
19. Y. Yao, Y. Sugawara, K. Sato, D. Yokoe, K. Sasaki, A. Kuramata, and Y. Ishikawa, J. Alloys Compd. 910, 164788 (2022). [DOI:10.1016/j.jallcom.2022.164788]
20. Y. Yao, K. Sato, Y. Sugawara, N. Okada, K. Tadatomo, K. Sasaki, A. Kuramata, and Y. Ishikawa, J. Cryst. Growth 583, 126558 (2022). [DOI:10.1016/j.jcrysgro.2022.126558]
21. Y. Yao, K. Sato, Y. Sugawara, and Y. Ishikawa, J. Alloys Compd. 902, 163830 (2022). [DOI:10.1016/j.jallcom.2022.163830]
22. Y. Yao, K. Hirano, H. Yamaguchi, Y. Sugawara, N. Okada, K. Tadatomo, and Y. Ishikawa, J. Alloys Compd. 896, 163025 (2021). [DOI:10.1016/j.jallcom.2021.163025]
23. Y. Yao, Y. Sugawara, D. Yokoe, K. Hirano, N. Okada, K. Tadatomo, K. Sasaki, A. Kuramata, and Y. Ishikawa, Jpn. J. Appl. Phys. 60, 128004 (2021). [DOI:10.35848/1347-4065/ac3a20]
24. N. Okada, R. Sakamoto, K. Ataka, T. Ito, W. Matsumura, L. You, Y. Yao, Y. Ishikawa, and K. Tadatomo, Jpn. J. Appl. Phys. 60, 125502 (2021). [DOI:10.35848/1347-4065/ac2e7f]
25. Y. Yao, K. Hirano, Y. Takahashi, Y. Sugawara, K. Sasaki, A. Kuramata, and Y. Ishikawa, J. Cryst. Growth 576, 126376 (2021). [DOI:10.1016/j.jcrysgro.2021.126376]
26. Y. Ishikawa, Y. Sugawara, Y. Yao, N. Noguchi, Y. Takeda, H. Yamada, M. Shimizu, and K. Tadatomo, Jpn. J. Appl. Phys. 60, 115501 (2021). [DOI:10.35848/1347-4065/ac2ae5]
27. S. Suehiro, T. Kimura, D. Yokoe, Y. Yao, and Y. Ishikawa, J. Ceram. Soc. Jpn. 129, 310 (2021). [DOI:10.2109/jcersj2.20222]
28. Y. Yao, Y. Sugawara, Y. Ishikawa, and K. Hirano, Jpn. J. Appl. Phys. 60, 010908 (2021). [DOI:10.35848/1347-4065/abd2dd]
29. Y. Yao, Y. Sugawara, D. Yokoe, K. Sato, Y. Ishikawa, N. Okada, K. Tadatomo, M. Sudo, M. Kato, M. Miyoshi, and T. Egawa, CrystEngComm 22, 8299 (2020). [DOI:10.1039/d0ce01344g]
30. Y. Yao, Y. Ishikawa, and Y. Sugawara, Jpn. J. Appl. Phys. 59, 125501 (2020). [DOI:10.35848/1347-4065/abc1aa]
31. Y. Ishikawa, Y. Sugawara, K. Sato, Y. Yao, N. Okada, and K. Tadatomo, Jpn. J. Appl. Phys. 59, 100907 (2020). [DOI:10.35848/1347-4065/abbb23]
32. Y. Ishikawa, Y. Sugawara, D. Yokoe, and Y. Yao, Jpn. J. Appl. Phys. 59, 091005 (2020). [DOI:10.35848/1347-4065/abb00c]
33. Y. Yao, Y. Tsusaka, Y. Ishikawa, Y. Sugawara, Y. Fujita, J. Matsui, N. Okada, and K. Tadatomo, Appl. Phys. Lett. 117, 092102 (2020). [DOI:10.1063/5.0015108]
34. K. Ogawa, N. Ogawa, R. Kosaka, T. Isshiki, T. Aiso, M. Iyoki, Y. Yao, and Y. Ishikawa, Mater. Sci. Forum 1004, 512 (2020). [DOI:10.4028/www.scientific.net/MSF.1004.512]
35. K. Ogawa, N. Ogawa, R. Kosaka, T. Isshiki, Y. Yao, and Y. Ishikawa, J. Electron. Mater. 49, 5190 (2020). [DOI:10.1007/s11664-020-08313-5]
36. W. Yi, A. Kumar, J. Uzuhashi, T. Kimura, R. Tanaka, S. Takashima, M. Edo, Y. Yao, Y. Ishikawa, J. Chen, T. Ohkubo, T. Sekiguchi, and K. Hono, Appl. Phys. Lett. 116, 242103 (2020). [DOI:10.1063/5.0009596]
37. Y. Yao, Y. Ishikawa, and Y. Sugawara, J. Cryst. Growth 548, 125825 (2020). [DOI:10.1016/j.jcrysgro.2020.125825]
38. Y. Yao, Y. Sugawara, and Y. Ishikawa, J. Appl. Phys. 127, 205110 (2020). [DOI:10.1063/5.0007229]
39. Y. Yao, Y. Sugawara, and Y. Ishikawa, Jpn. J. Appl. Phys. 59, 045502 (2020). [DOI:10.35848/1347-4065/ab7dda]
40. Y. Yao, Y. Sugawara, Y. Ishikawa, N. Okada, and K. Tadatomo, J. Electron. Mater. 49, 5144 (2020). [DOI:10.1007/s11664-020-08016-x]
41. T. Ito, R. Sakamoto, T. Isono, Y. Yao, Y. Ishikawa, N. Okada, and K. Tadatomo, Phys. Status Solidi B 257, 1900589 (2020). [DOI:10.1002/pssb.201900589]
42. T. Isono, T. Ito, R. Sakamoto, Y. Yao, Y. Ishikawa, N. Okada, and K. Tadatomo, Phys. Status Solidi B 257, 1900588 (2020). [DOI:10.1002/pssb.201900588]
43. Y. Yao, Y. Ishikawa, and Y. Sugawara, Phys. Status Solidi A 217, 1900630 (2020). [DOI:10.1002/pssa.201900630]
44. Y. Yao, Y. Ishikawa, and Y. Sugawara, J. Appl. Phys. 126, 205106 (2019). [DOI:10.1063/1.5129226]
45. Y. Yao, Y. Sugawara, Y. Ishikawa, N. Okada, K. Tadatomo, Y. Takahashi, and K. Hirano, Jpn. J. Appl. Phys. 58, SCCB29 (2019). [DOI:10.7567/1347-4065/ab0d0a]
46. M. Sudo, Y. Ishikawa, Y. Yao, Y. Sugawara, and M. Kato, Mater. Sci. Forum 924, 151 (2018). [DOI:10.4028/www.scientific.net/MSF.924.151]
47. Y. Ishikawa, M. Sudo, Y. Yao, Y. Sugawara, and M. Kato, J. Appl. Phys. 123, 225101 (2018). [DOI:10.1063/1.5026448]
48. S. Usami, Y. Ando, A. Tanaka, K. Nagamatsu, M. Deki, M. Kushimoto, S. Nitta, Y. Honda, H. Amano, Y. Sugawara, Y. Yao, and Y. Ishikawa, Appl. Phys. Lett. 112, 182106 (2018). [DOI:10.1063/1.5024704]
49. Y. Yao, Y. Ishikawa, Y. Sugawara, Y. Takahashi, and K. Hirano, J. Electron. Mater. 47, 5007 (2018). [DOI:10.1007/s11664-018-6252-3]
50. Y. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, and K. Tadatomo, Mater. Sci. Forum 897, 707 (2017). [DOI:10.4028/www.scientific.net/MSF.897.707]
51. Y. Yao, Y. Ishikawa, Y. Sugawara, Y. Takahashi, and K. Hirano, Mater. Sci. Forum 897, 185 (2017). [DOI:10.4028/www.scientific.net/MSF.897.185]
52. Y. Yao, Y. Ishikawa, M. Sudo, Y. Sugawara, and D. Yokoe, J. Cryst. Growth 468, 484 (2017). [DOI:10.1016/j.jcrysgro.2017.01.017]
53. Y. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno, T. Shirai, K. Sato, T. Bessho, Y. Takahashi, Y. Yamashita, and K. Hirano, Mater. Sci. Forum 858, 389 (2016). [DOI:10.4028/www.scientific.net/MSF.858.389]
54. Y. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, and K. Tadatomo, Superlattice Microst. 99, 83 (2016). [DOI:10.1016/j.spmi.2016.05.002]
55. Y. Yao, Y. Ishikawa, Y. Sugawara, H. Yamada, A. Chayahara, and Y. Mokuno, Diam. Relat. Mater. 63, 86 (2016). [DOI:10.1016/j.diamond.2015.10.003]
56. Y. Yao, Y. Ishikawa, Y. Sugawara, and K. Sato, Mater. Sci. Forum 821-823, 541 (2015). [DOI:10.4028/www.scientific.net/MSF.821-823.541]
57. Y. Sugawara, Y. Yao, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, S. Yamaguchi, K. Nishikawa, and Y. Ikuhara, Mater. Sci. Forum 778-780, 366 (2014). [DOI:10.4028/www.scientific.net/MSF.778-780.366]
58. Y. Ishikawa, Y. Yao, K. Sato, Y. Sugawara, Y. Okamoto, and N. Hayashi, Mater. Sci. Forum 778-780, 362 (2014). [DOI:10.4028/www.scientific.net/MSF.778-780.362]
59. Y. Ishikawa, Y. Yao, Y. Sugawara, K. Sato, Y. Okamoto, N. Hayashi, B. Dierre, K. Watanabe, and T. Sekiguchi, Jpn. J. Appl. Phys. 53, 071301 (2014). [DOI:10.7567/JJAP.53.071301]
60. Y. Yao, Y. Ishikawa, Y. Sugawara, and K. Sato, Mater. Sci. Forum 778-780, 746 (2014). [DOI:10.4028/www.scientific.net/MSF.778-780.746]
61. Y. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno, H. Suzuki, H. Sakamoto, T. Bessho, S. Yamaguchi, and K. Nishikawa, Mater. Sci. Forum 778-780, 346 (2014). [DOI:10.4028/www.scientific.net/MSF.778-780.346]
62. Y. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, T. Shirai, K. Danno, H. Suzuki, H. Sakamoto, T. Bessho, B. Dierre, K. Watanabe, and T. Sekiguchi, Jpn. J. Appl. Phys. 53, 081301 (2014). [DOI:10.7567/JJAP.53.081301]
63. Y. Yao, Y. Ishikawa, K. Sato, Y. Sugawara, K. Danno, H. Suzuki, and T. Bessho, Mater. Sci. Forum 740-742, 829 (2013). [DOI:10.4028/www.scientific.net/MSF.740-742.829]
64. Y. Yao, Y. Ishikawa, Y. Sugawara, K. Sato, K. Danno, H. Suzuki, T. Bessho, S. Yamaguchi, and K. Nishikawa, J. Cryst. Growth 364, 7 (2013). [DOI:10.1016/j.jcrysgro.2012.12.011]
65. Y. Sugawara, Y. Yao, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, Y. Kawai, and Y. Ikuhara, Mater. Sci. Forum 725, 11 (2012). [DOI:10.4028/www.scientific.net/MSF.725.11]
66. Y. Sugawara, M. Nakamori, Y. Yao, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, S. Yamaguchi, K. Nishikawa, and Y. Ikuhara, Appl. Phys. Express 5, 081301 (2012). [DOI:10.1143/APEX.5.081301]
67. Y. Ishikawa, K. Sato, Y. Okamoto, N. Hayashi, Y. Yao, and Y. Sugawara, Mater. Sci. Forum
717-720, 383 (2012). [DOI:10.4028/www.scientific.net/MSF.717-720.383]
68. Y. Ishikawa, Y. Yao, Y. Sugawara, K. Danno, H. Suzuki, Y. Kawai, and N. Shibata, Mater. Sci. Forum 717-720, 367 (2012). [DOI:10.4028/www.scientific.net/MSF.717-720.367]
69. Y. Yao, T. Sekiguchi, T. Ohgaki, Y. Adachi, and N. Ohashi, J. Ceram. Soc. Jpn. 120, 513 (2012). [DOI:10.2109/jcersj2.120.513]
70. Y. Yao, Y. Sugawara, Y. Ishikawa, K. Danno, H. Suzuki, T. Bessho, Y. Kawai, and N. Shibata, Mater. Sci. Forum 725, 45 (2012). [DOI:10.4028/www.scientific.net/MSF.725.45]
71. Y. Yao, K. Sato, Y. Sugawara, Y. Ishikawa, Y. Okamoto, and N. Hayashi, Mater. Sci. Forum 725, 23 (2012). [DOI:10.4028/www.scientific.net/MSF.725.23]
72. Y. Yao, Y. Ishikawa, K. Sato, Y. Sugawara, K. Danno, H. Suzuki, and T. Bessho, Appl. Phys. Express 5, 075601 (2012). [DOI:10.1143/APEX.5.075601]
73. Y. Ishikawa, Y. Yao, K. Sato, Y. Sugawara, K. Danno, H. Suzuki, T. Bessho, Y. Kawai, and N. Shibata, Acta Phys. Pol. A 120, A-25 (2011). [DOI:10.12693/APhysPolA.120.A-25]
74. Y. Yao, Y. Sugawara, Y. Ishikawa, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai, and N. Shibata, J. Appl. Phys. 109, 123524 (2011). [DOI:10.1063/1.3597784]
75. Y. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai, and N. Shibata, Jpn. J. Appl. Phys. 50, 075502 (2011). [DOI:10.1143/JJAP.50.075502]
76. Y. Yao, Y. Sugawara, Y. Ishikawa, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai, and N. Shibata, Mater. Sci. Forum 679-680, 294 (2011). [DOI:10.4028/www.scientific.net/MSF.679-680.294]
77. Y. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai, and N. Shibata, Mater. Sci. Forum 679-680, 290 (2011). [DOI:10.4028/www.scientific.net/MSF.679-680.290]
78. Y. Yao, T. Ohgaki, N. Fukata, Y. Adachi, Y. Wada, H. Haneda, and N. Ohashi, Scr. Mater. 62, 516 (2010). [DOI:10.1016/j.scriptamat.2009.12.029]
79. Y. Yao, T. Sekiguchi, T. Ohgaki, Y. Adachi, and N. Ohashi, J. Ceram. Soc. Jpn. 118, 152 (2010). [DOI:10.2109/jcersj2.118.152]
80. Y. Wang, B. Dierre, T. Sekiguchi, Y. Yao, X.L. Yuan, F. Xu, and B. Shen, J. Vac. Sci. Technol. A 27, 611 (2009). [DOI:10.1116/1.3130148]
81. T. Yamada, H. Yamane, Y. Yao, M. Yokoyama, and T. Sekiguchi, Mater. Res. Bull. 44, 594 (2009). [DOI:10.1016/j.materresbull.2008.07.007]
82. Y. Yao, T. Sekiguchi, T. Ohgaki, Y. Adachi, N. Ohashi, H. Okuno, and M. Takeguchi, Appl. Phys. Lett. 95, 041913 (2009). [DOI:10.1063/1.3189262]
83. Y. Yao, T. Ohgaki, K. Matsumoto, I. Sakaguchi, Y. Wada, H. Haneda, T. Sekiguchi, and N. Ohashi, Phys. Status Solidi C 6, S707 (2009). [DOI:10.1002/pssc.200880818]
84. B. Dierre, X.L. Yuan, Y. Yao, M. Yokoyama, and T. Sekiguchi, J. Mater. Sci.: Mater. Electron.
19, S307 (2008). [DOI:10.1007/s10854-008-9603-7]
85. Y. Yao, T. Sekiguchi, N. Ohashi, Y. Adachi, and T. Ohgaki, Appl. Phys. Lett. 92, 211910 (2008). [DOI:10.1063/1.2937833]
86. Y. Yao, T. Sekiguchi, Y. Sakuma, N. Ohashi, Y. Adachi, H. Okuno, and M. Takeguchi, Cryst. Growth Des. 8, 1073 (2008). [DOI:10.1021/cg700947g]
87. T. Yamada, H. Yamane, T. Goto, T. Yao, Y. Yao, and T. Sekiguchi, Cryst. Res. Technol. 42, 713 (2007). [DOI:10.1002/crat.200610893]
88. Y. Yao, T. Sekiguchi, Y. Sakuma, and N. Ohashi, J. Cryst. Growth 301-302, 521 (2007). [DOI:10.1016/j.jcrysgro.2006.11.066]
89. T. Sekiguchi, M.R. Chandra, Y. Yao, X.L. Yuan, K. Tsuji, and J.Y. Kang, Mater. Sci. Semicond. Process. 9, 19 (2006). [DOI:10.1016/j.mssp.2006.01.067]
90. Y. Yao, T. Sekiguchi, Y. Sakuma, M. Miyamura, and Y. Arakawa, Scr. Mater. 55, 679 (2006). [DOI:10.1016/j.scriptamat.2006.06.031]
91. R. Yue, Y. Yao, and L. Liu, Chinese Phys. Lett. 23, 482 (2006). [DOI:10.1088/0256-307X/23/2/058]
92. R. Buckmaster, J.H. Yoo, K. Shin, Y. Yao, T. Sekiguchi, M. Yokoyama, T. Hanada, T. Goto, M. Cho, Y. Kawazoe, and T. Yao, Microelectronics J. 36, 456 (2005). [DOI:10.1016/j.mejo.2005.02.046]
・査読付原著論文
1. K. Ohnishi, M. Kanoh, T. Tanikawa, S. Kuboya, T. Mukai, and T. Matsuoka, “Halide vapor phase epitaxy of thick GaN films on ScAlMgO4 substrates and their self-separation for fabricating freestanding wafers”, Appl. Phys. Express 10, 101001 (2017).
2. T. Tanikawa, K. Ohnishi, M. Kanoh, T. Mukai, and T. Matsuoka, “Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence”, Appl. Phys. Express 11, 031004 (2018).
3. K. Ohnishi, S. Kuboya, T. Tanikawa, T. Iwabuchi, K. Yamamura, N. Hasuike, H. Harima, T. Fukuda, and T. Matsuoka, “Reuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN”, Jpn. J. Appl. Phys. 58, SC1023 (2019).
4. K. Ohnishi, Y. Amano, N. Fujimoto, S. Nitta, Y. Honda, and H. Amano, “Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO”, Appl. Phys. Express 13, 061007 (2020).
5. T. Kimura, K. Ohnishi, Y. Amano, N. Fujimoto, M. Araidai, S. Nitta, Y. Honda, H. Amano, Y. Kangawa, and K. Shiraishi, “Thermodynamic analysis of gas phase reaction of Mg-doped GaN growth by HVPE using MgO”, Jpn. J. Appl. Phys. 59, 088001 (2020).
6. K. Ohnishi, Y. Amano, N. Fujimoto, S. Nitta, H. Watanabe, Y. Honda, and H. Amano, “Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy”, J. Cryst. Growth 566-567, 126173 (2021).
7. K. Ohnishi, S. Kawasaki, N. Fujimoto, S. Nitta, H. Watanabe, Y. Honda, and H. Amano, “Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy”, Appl. Phys. Lett. 119, 152102 (2021).
8. S. Lu, M. Deki, J. Wang, K. Ohnishi, Y. Ando, T. Kumabe, H. Watanabe, S. Nitta, Y. Honda, and H. Amano, “Ohmic contact on low-doping-density p-type GaN with nitrogen annealed GaN”, Appl. Phys. Lett. 119, 242104 (2021).
9. K. Ohnishi, N. Fujimoto, S. Nitta, H. Watanabe, Y. Honda, and H. Amano, “Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates”, J. Cryst. Growth 592, 126749 (2022).
10. K. Ohnishi, N. Fujimoto, S. Nitta, H. Watanabe, S. Lu, M. Deki, Y. Honda, and H. Amano, “Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide
vapor phase epitaxy”, J. Appl. Phys. 132, 145703 (2022).
11. S. Lu, M. Deki, T. Kumabe, J. Wang, K. Ohnishi, H. Watanabe, S. Nitta, Y. Honda, and H. Amano, “Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current-voltage characteristic”, Appl. Phys. Lett. 122, 142106 (2023).
12. K. Hamasaki, K. Ohnishi, S. Nitta, N. Fujimoto, H. Watanabe, Y. Honda, and H. Amano, “Sn-doped n-type GaN layer with high electron density of 1020 cm–3 grown by halide vapor phase epitaxy”, J. Cryst. Growth 628, 127528 (2024).
13. H. Watanabe, S. Nitta, Y. Ando, K. Ohnishi, Y. Honda, and H. Amano, “Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate”, J. Cryst. Growth 628, 127552 (2024).
14. Z. Cheng, Z. Huang, J. Sun, J. Wang, T. Feng, K. Ohnishi, J. Liang, H. Amano, R. Huang, “(Ultra)wide bandgap semiconductor heterostructures for electronics cooling”, Appl. Phys. Rev. 11, 041324 (2024).
15. K. Ohnishi, K. Hamasaki, S. Nitta, N. Fujimoto, H. Watanabe, Y. Honda, and H. Amano, “Sn-doped n-type GaN freestanding layer: Thermodynamic study and fabrication by halide vapor phase epitaxy”, J. Cryst. Growth 648, 127923 (2024).
16. K. Ohnishi, N. Higuchi, M. Cho, M. Tamaru, and T. Hamaguchi, “Optical Fiber Approximation of GaN-Based Vertical-Cavity Surface-Emitting Laser Diodes with a Curved Mirror”, Opt. Express 33, 24588 (2025).
・査読付国際会議論文
1. K. Matsumoto, K. Ohnishi, and H. Amano, “Challenges and opportunities of nitride light emitting devices by HVPE thanks to a stable Mg source”, Proc. SPIE 12441, 1244104 (2023).