Mott neurons
In this work we report an unexpectedly long memory state in a Mott system under electric pulse excitation (spikes)
In this work we propose a new spiking neuron based on Mott insulators
Reviews
Quantum materials for energy-efficient neuromorphic computing: Opportunities and challenges Axel Hoffmann, Shriram Ramanathan, Julie Grollier, Andrew D Kent, Marcelo J Rozenberg, Ivan K Schuller, Oleg G Shpyrko, Robert C Dynes, Yeshaiahu Fainman, Alex Frano, Eric E Fullerton, Giulia Galli, Vitaliy Lomakin, Shyue Ping Ong, Amanda K Petford-Long, Jonathan A Schuller, Mark D Stiles, Yayoi Takamura, Yimei Zhu; APL Materials 10 (7), 070904 (2022)
Challenges in materials and devices for resistive-switching-based neuromorphic computing. Javier del Valle, Juan Gabriel Ramírez, Marcelo J. Rozenberg, and Ivan K. Schuller; Journal of Applied Physics 124, 211101 (2018)
Resistive switching in Mott insulators and correlated systems. E. Janod, J. Tranchant, B. Corraze, M. Querré, P. Stoliar, M. Rozenberg, T. Cren, D. Roditchev, V. Ta Phuoc, M.-P. Besland and L. Cario, Adv. Func. Mat. 25 (40), 6287 (2016)
Recent Articles
Characteristic length scales of the electrically induced insulator-to-metal transition, T. Luibrand, A. Bercher, R. Rocco, F. Tahouni-Bonab, L. Varbaro, C. W. Rischau, C. Dominguez Y. Zhou, W. Luo, S. Bag, L. Fratino, R. Kleiner, S. Gariglio, D. Koel, J-M Triscone, M.J. Rozenberg, A.B. Kuzmenko, S. Guénon and J. del Valle; Phys. Rev. Res., 5, 013108, (2023)
Exponential Escape Rate of Filamentary Incubation in Mott Spiking Neurons. Rodolfo Rocco, Javier del Valle, Henry Navarro, Pavel Salev, Ivan K. Schuller, and Marcelo Rozenberg; Phys. Rev. Applied 17, 024028 (2022) Editors’ Suggestion
Spatiotemporal characterization of the field-induced insulator-to-metal transition. Javier del Valle, Nicolas M. Vargas, Rodolfo Rocco, Pavel Salev, Yoav Kalcheim, Pavel N. Lapa, Coline Adda, Min-Han Lee, Paul Y. Wang, Lorenzo Fratino, Marcelo J. Rozenberg, Ivan K. Schuller; Science 373, 907–911 (2021)
Operando characterization of conductive filaments during resistive switching in Mott VO2. S. Cheng, M.-H. Lee, X. Li, L. Fratino, F. Tesler, M.-G. Han, J. del Valle, M. J. Rozenberg, I. K. Schuller, Y. Zhu; PNAS PNAS 118, e2013676118 (2021)
Non-Thermal Resistive Switching in Mott Insulators. Yoav Kalcheim, Alberto Camjayi, Javier del Valle, Pavel Salev, Marcelo Rozenberg and Ivan K. Schuller; Nature Communications 11, 2985 (2020)
Subthreshold firing in Mott nanodevices. J. Del Valle, Pavel Salev, Federico Tesler, Nicolás M. Vargas, Yoav Kalcheim, Paul Wang, Juan Trastoy, Juan Gabriel Ramírez, George Kassabian, Marcelo J. Rozenberg and Ivan K. Schuller; Nature, 569 (7756), pp.388-392 (2019).
Relaxation of a Spiking Mott Artificial Neuron. F. Tesler, C. Adda, J. Tranchant, B. Corraze, E. Janod, L. Cario, P. Stoliar and Marcelo J. Rozenberg; Physical Review Applied 10 (5), 054001 (2018). Featured in Physics (APS webportal)