"If we knew what it was we were doing, it would not be called research, would it?"
- Albert Einstein
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Research Interest
Research Interest
Semiconductor Device Physics and Compact Modeling
Two-Dimensional Semiconductors (InSe, MoS2, WS2)
Energy-Efficient Emerging Nanoscale Devices (2D-TMD-FETs, GAA-FETs, NC-FETs, TFETs)
Advanced Functional Ceramics (Perovskite, Spinel)
Research Experience
Research Experience
Analytical Study of Negative Capacitance in Back-Gated InSe FETs
(Revising for submission to IEEE Transactions on Electron Devices)
Research Associate: Mayukh Mallick, MS Student, EEE, University of Dhaka
Supervisors:
Dr. Mainul Hossain, Associate Professor of EEE, University of Dhaka (END Group)
Mir Md Fahimul Islam, PhD Student, ECE, Purdue University (Google Scholar)
As the demand for energy-efficient electronics continues to surge, traditional MOSFET technology faces a major limitation—the inability to break through the Boltzmann limit, which restricts power scaling. This is where Negative Capacitance Field-Effect Transistors (NCFETs) offer an innovative solution by employing ferroelectric materials to achieve a sub-60 mV/decade subthreshold swing. Our analytical model, which includes Indium Selenide (InSe)—a two-dimensional semiconductor known for its remarkable carrier mobility and tunable bandgap energy—shows an impressive 96.43% reduction in the subthreshold swing. This advancement enables a higher on-state current of 2.2 × 10⁵ A/µm and an exceptional seven-order on-off current ratio. Such enhancements not only improve transistor efficiency but also open the door for ultra-low-power circuits, ultimately revolutionizing the field of nanoelectronics.
Low-Dimensional InSe-Based GAA-ISFETs for Highly Sensitive pH Sensors
(Manuscript under preparation targeting IEEE Sensors Journal)
Research Associate: Mayukh Mallick, MS Student, EEE, University of Dhaka
Supervisors:
Dr. Mainul Hossain, Associate Professor of EEE, University of Dhaka (END Group)
Sarah Cynthia Gomes, PhD Student, EECS, UC Berkeley (Google Scholar)
Imagine a world where pH sensors are not only highly sensitive but also compact and energy-efficient, revolutionizing industries from healthcare to environmental monitoring. Presenting the InSe-based nanowire field-effect transistor (NW-FET), a cutting-edge pH sensor that utilizes the unique properties of indium selenide (InSe) and hafnium oxide (HfO₂) to provide unparalleled performance. This compact sensor outshines conventional silicon-based devices, showcasing an impressive on-off current ratio of 13.56 orders and a maximum current sensitivity of 105 per pH. Discover the future of pH sensing, where nanoscale precision meets practical applications, and see how InSe-NW-FETs establish a new benchmark for sensitivity, compactness, and efficiency.
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