Publication List
Peer-Reviewed Journals
C. S. Pedersen, J. H. Chang, Y. Li et al. Prediction of crystalline Ta4O9 phase using first principles-based cluster expansion calculations. APL Materials vo. 8, no. 12, p.121101. https://doi.org/10.1063/5.0027018
W. Wang, W. Song, P.Yao, Y. Li et al. Integration and co-design of memristive devices and algorithms for artificial intelligence. Cell iScience, vol. 23, p.101809, 2020. https://doi.org/10.1016/j.isci.2020.101809
C. S. Pedersen, J. H. Chang, Y. Li, et al. Phase separation in amorphous tantalum oxide from first principles. APL Mater., vol. 8, no. 7, p. 71108, 2020. https://doi.org/10.1063/5.0011390
Y. Li et al. Tuning the resistive switching in tantalum oxide-based memristors by annealing. AIP Adv., vol. 10, no. 6, p. 65112, 2020. https://doi.org/10.1063/5.0004722
Y. Li et al. Tuning the stoichiometry and electrical properties of tantalum oxide thin films. Appl. Surf. Sci., vol. 470, pp. 1071–1074, 2019. https://doi.org/10.1016/j.apsusc.2018.11.153
A. I. Berg, S. Brivio, S. Brown, et al. Synaptic and neuromorphic functions: general discussion. Faraday Discuss., vol. 213, pp. 553-578, 2019. https://doi.org/10.1039/C8FD90065E
E. Ambrosi, P. Bartlett, A. I. Berg, S. Brivio, G. Burr, S. Deswal, J. Deuermeier, M. Haga, A. Kiazadeh, and G. Kissling, Y. Li et al. Electrochemical metallization ReRAMs (ECM)-Experiments and modelling: general discussion. Faraday Discuss., vol. 213, pp. 115–150, 2019.6. A. I. Berg, S. Brivio, S. Brown, G. Burr, S. Deswal, J. Deuermeier, E. Gale, H. Hwang, D. Ielmini, and G. Indiveri, Y. Li et al. Synaptic and neuromorphic functions: general discussion. Faraday Discuss., vol. 213, pp. 553–578, 2019. https://doi.org/10.1039/C8FD90059K
M. Zhang, S. Long, Y. Li et al. Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM Device. Nanoscale Res. Lett., vol. 11, no. 1, pp. 1–6, 2016. https://doi.org/10.1186/s11671-016-1484-8
J. Niu, M. Zhang, Y. Li et al. Highly scalable resistive switching memory in metal nanowire crossbar arrays fabricated by electron beam lithography. J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom., vol. 34, no. 2, p. 02G105, 2016. https://doi.org/10.1116/1.4943039
Y. Li et al. Conductance quantization in resistive random access memory. Nanoscale Res. Lett., vol. 10, no. 1, p. 420, 2015. https://doi.org/10.1186/s11671-015-1118-6
M. Zhang, G. Wang, S. Long, Z. Yu, Y. Li et al. A physical model for the statistics of the Set switching time of resistive RAM measured with the Width-Adjusting Pulse Operation method. IEEE Electron Device Lett., vol. 36, no. 12, pp. 1303–1306, 2015. https://doi.org/10.1109/LED.2015.2493540
X. Xu, H. Lv, H. Liu, Q. Luo, T. Gong, M. Wang, G. Wang, M. Zhang, Y. Li et al. Investigation of LRS dependence on the retention of HRS in CBRAM. Nanoscale Res. Lett., vol. 10, no. 1, p. 61, 2015. https://doi.org/10.1186/s11671-015-0771-0
G. Wang, S. Long, Z. Yu, M. Zhang, T. Ye, Y. Li et al. Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation. Appl. Phys. Lett., vol. 106, no. 9, p. 92103, 2015. https://doi.org/10.1063/1.4907604
G. Wang, S. Long, Z. Yu, M. Zhang, Y. Li et al. Impact of program/erase operation on the performances of oxide-based resistive switching memory. Nanoscale Res. Lett., vol. 10, no. 1, p. 39, 2015. https://doi.org/10.1186/s11671-014-0721-2
M. Zhang, S. Long, G. Wang, X. Xu, Y. Li et al. Set statistics in conductive bridge random access memory device with Cu/HfO2/Pt structure. Appl. Phys. Lett., vol. 105, no. 19, p. 193501, 2014. https://doi.org/10.1063/1.4901530
X. Xu, H. Lv, H. Liu, T. Gong, G. Wang, M. Zhang, Y. Li et al. Superior retention of low-resistance state in conductive bridge random access memory with single filament formation. IEEE Electron Device Lett., vol. 36, no. 2, pp. 129–131, 2014. https://doi.org/10.1109/LED.2014.2379961
M. Zhang, S. Long, G. Wang, Y. Li et al. An overview of the switching parameter variation of RRAM. Chinese Sci. Bull., vol. 59, no. 36, pp. 5324–5337, 2014. https://doi.org/10.1007/s11434-014-0673-z
G. Wang, S. Long, M. Zhang, Y. Li et al. Operation methods of resistive random access memory. Sci. China Technol. Sci., vol. 57, no. 12, pp. 2295–2304, 2014. https://doi.org/10.1007/s11431-014-5718-7
Conference Proceedings
W. Wang, Y. Li et al. A hardware neural network for handwritten digits recognition using binary RRAM as synaptic weight element. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), 2016, pp. 50–51. https://doi.org/10.1109/SNW.2016.7577980
Y. Li et al. Improving the resistive switching reliability via controlling the resistance states of RRAM. 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2015, pp. 552–555. https://doi.org/10.1109/IPFA.2015.7224456
Y. Wang, Y. Li et al. The heavy ion radiation effects on the Pt/HfO2/Ti resistive switching memory. 2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2016, pp. 1–3. https://doi.org/10.1109/RADECS.2016.8093118
M. Zhang, S. Long, G. Wang, X. Xu, Y. Li et al. Justification and Monte Carlo simulation of microstructure evolution process of conductive filament in reset transition in Cu/HfO 2/Pt RRAM. 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2015, pp. 539–542.22. https://doi.org/10.1109/IPFA.2015.7224453
X. Xu, H. Liu, Q. Luo, H. Lv, M. Zhang, M. Wang, G. Wang, Y. Li et al. Methodology for stability evaluation on the Multi-level storages of oxide-based conductive bridge RAM (CBRAM). Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2015, vol. 2015-August, pp. 543–547. https://doi.org/10.1109/IPFA.2015.7224454
Book Chapter
Y. Li et al. The effect of external stimuli on the performance of memristive oxides. Book chapter in “Metal Oxides for Nonvolatile Memory: Technology and Applications”, Elsevier, P. Dimitrakis, I. Valov (editors).