My name is Yang Li, currently work as a postdoc at the Israel Institute of Technology, Israel. My research interest is Resistive Random Access Memories (RRAMs). Specifically, I am working on thin film deposition, device fabrication, and material characterization. I aim at studying the effect of external stimulus, such as electrical field, heat, and strain, on the memristor devices and try to reveal the device switching mechanism. Related to this, I also study the oxygen vacancies defect inside the material and its effect on the material properties.

Google scholar: https://scholar.google.com/citations?user=1FlZUHAAAAAJ&hl=en

Get in touch at liyang.leonlee(at)gmail.com