Publications

Google Scholar Profile: https://scholar.google.com/citations?user=5PxEmecAAAAJ&hl=en

ORCID Profile: https://orcid.org/my-orcid?orcid=0000-0001-7693-2187

Journal Publications:

1. A. G. Jacobs, J. A. Spencer, M. J. Tadjer, B. N. Feigelson, A. Lamb, M.-H. Lee, R. L. Peterson, F. Alema, A. Osinsky, Y. Zhang, K. D. Hobart, and T. J. Anderson, “Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3,” Journal of Electronic Materials, 53(6): 2811–2816 (2024). https://doi.org/10.1007/s11664-024-11075-z

2. M.-H. Lee, R. Schewski, J. B. Varley, M. Albrecht, and R. L. Peterson, "Real-time Observations of Point Defect Migration in Beta-phase Gallium Oxide," under review.

3. M.-H. Lee, T.-S. Chou, S. B. Anooz, Z. Galazka, A. Popp, and R. L. Peterson, "Effect of Post-metallization Anneal on (100) Ga2O3/ Ti-Au Ohmic Contact Performance and Interfacial Degradation," APL Materials 10 (9): 091105 (2022). https://doi.org/10.1063/5.0096245

4. M.-H. Lee, T.-S. Chou, S. B. Anooz, Z. Galazka, A. Popp, and R. L. Peterson, "Exploiting the Nanostructural Anisotropy of β-Ga2O3 to Demonstrate Giant Improvement in Ohmic Junction," ACS Nano, 16 (8): 11988-11997 (2022). https://doi.org/10.1021/acsnano.2c01957

5. M.-H. Lee, "Investigation of Ohmic Contact Interfaces and Crystalline Defects for Wide-Bandgap Beta-Phase Gallium Oxide and its Alloys," PhD dissertation (2021). https://dx.doi.org/10.7302/3953

6. M.-H. Lee and R. L. Peterson, "Process and Characterization of Ohmic Contacts for Beta-Phase Gallium Oxide," Journal of Materials Research 36 (23): 4771-4789 (2021). https://doi.org/10.1557/s43578-021-00334-y

7. M.-H. Lee and R. L. Peterson, "Accelerated Aging Stability of β-Ga2O3 - Titanium/Gold Ohmic Interfaces," ACS Applied Materials & Interfaces 12 (41): 46277-46287 (2020). https://doi.org/10.1021/acsami.0c10598

8. M.-H. Lee and R. L. Peterson, "Annealing Induced Interfacial Evolution of Titanium/Gold Metallization on Unintentionally Doped β-Ga2O3," ECS Journal of Solid State Science and Technology 8 (7): Q3176 (2019). https://doi.org/10.1149/2.0321907jss

9. M.-H. Lee and R. L. Peterson, "Interfacial Reactions of Titanium/Gold Ohmic Contacts with Sn-doped β-Ga2O3," APL Materials 7 (2): 022524 (2019). https://doi.org/10.1063/1.5054624

Conference Presentation:

1. M.-H. Lee, R. Schewski, J. B. Varley, T. Remmele, R. L. Peterson, M. Albrecht, "Quantitative Study of Ga Interstitial Diffusion in β-Ga2O3: Insights from In Situ Transmission Electron Microscopy and First-Principles Calculations," 5th International Workshop on Gallium Oxide and Related Materials (IWGO-2024), May 2024, Berlin, Germany, Oral Presentation. 

2. A. G. Jacobs, J. Spencer, M. J. Tadjer1, B. N. Feigelson, M.-H. Lee, R. L. Peterson, F. Alema, A. Osinsky, Y. Zhang, K. Hobart, and T. Anderson, "Silicon Ion Implant Activation in β-Al0.4Ga1.6O3," 65th Electronic Materials Conference (EMC-65), June 2023, Santa Barbara, CA, Oral Presentation. 

3. R. L. Peterson and M.-H. Lee, "Interfacial Characteristics of Ohmic Contacts and Dielectrics on Ga2O3," 4th International Workshop on Gallium Oxide and Related Materials (IWGO-4), October 2022, Nagano, Japan, Invited Oral Presentation (Virtual). 

4. M.-H. Lee, A. G. Jacobs, M. J. Tadjer, and R. L. Peterson, "Ion Implantation Doping for β-AlxGa2-xO3 and the Application for Ohmic Contact Formation," 64th Electronic Materials Conference (EMC-64), July 2022, Columbus, OH, Oral Presentation. 

5. L. Miaja-Avila, B.W. Caplins, A.N. Chiaramonti, M.-H. Lee, R. L. Peterson, and N.A. Sanford, "EUV Pulsed Atom Probe Tomography of β-Ga2O3 Semiconductor Materials," 64th Electronic Materials Conference (EMC-64), June 2022, Columbus, OH, Oral Presentation. 

6. M.-H. Lee, T.-S. Chou, S. B. Anooz, Z. Galazka, A. Popp, and R. L. Peterson, Using Crystalline Anisotropy to Improve Ohmic Contact Performance for β-Ga2O3, 2022 Compound Semiconductor Week (CSW-2022), June 2022, Ann Arbor, MI, Oral Presentation. 

7. M.-H. Lee, R. Schewski, J. B. Varley, R. L. Peterson, M. Albrecht, "Real-time Observations of Point Defect Migration in Beta-phase Gallium Oxide," SPIE 2021 Photonics West, March 2021, San Francisco, CA, Oral Presentation (Virtual). 

8. M.-H. Lee and R. L. Peterson, "The Effect of Silicon Ion-Implant on Charge Transport Mechanisms of Ti/Au Ohmic Contacts to β-Ga2O3," Materials Research Society (MRS Spring/Fall Meeting, November 2020, Boston, MA, Oral Presentation (Virtual). 

9. R. L. Peterson and M.-H. Lee, "Process and Characterization of Ohmic Contacts for Beta-phase Gallium Oxide," Materials Research Society (MRS) Spring/Fall Meeting, November 2020, Boston, MA, Invited Oral Presentation (Virtual). 

10. M.-H. Lee and R. L. Peterson, "Process Influence on the Performance and Aging Stability of Ti/Au Ohmic Contacts to Beta-Phase Gallium Oxide," 62nd Electronic Materials Conference (EMC-62), June 2020, Columbus, OH, Oral Presentation (Virtual). 

11. M.-H. Lee and R. L. Peterson, "An Investigation of Interfacial Evolution of Beta-phase Gallium Oxide Titanium/Gold Ohmic Junction," 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3), August 2019, Columbus, OH, Oral Presentation. 

12. R. L. Peterson, H. N. Masten, J. D. Phillips, and M.-H. Lee, "Interfacial Defects in β‐Ga2O3," International Conference on Defects in Semiconductors (ICDS‐30), July 2019, Seattle, WA, Invited Oral Presentation. 

13. M.-H. Lee and R. L. Peterson, "A Study of the Interface of β-Ga2O3 with Ti/Au Contacts," 61st Electronic Materials Conference (EMC-61), June 2019, Ann Arbor, MI, Oral Presentation.

Invited Talks:

1. M.-H. Lee, College of Science and Engineering Seminar, Texas State University, April 2025, San Marcos, TX 

2. M.-H. Lee, Department of Electrical and Computer Engineering Seminar, Illinois Institute of Technology, March 2025, Chicago, IL 

3. M.-H. Lee, Department of Chemical Engineering and Materials Science Seminar, Michigan State University, February 2025, East Lansing, MI 

4. M.-H. Lee, Department of Electrical Engineering Seminar, Stanford University, September 2024, Stanford, CA 

5. M.-H. Lee, College of Engineering Seminar, University of Texas at Arlington, May 2024, Arlington, TX 

6. M.-H. Lee, School for Engineering of Matter, Transport and Energy Seminar, Arizona State University, February 2024, Tempe, AZ

Patent Application:

1. G. Xu, T. Chu, C. W. Yeung, K. Zhang, F. Zhang, M.-H. Lee, Y. Zhang, C.-C. Lin, C.-H. Lin, T. Ghani, "An Integration Scheme of Metallization Prior to High-K Dielectric Recess for Advanced Transistor Fabrication," US Patent Application, 2025.

2. G. Xu, T. Chu, K. Zhang, R. Chao, T.-H. Hung, F. Zhang, C.-C. Lin, C. W. Lin, C.-H. Lin, O. Golonzka, T. Ghani, Y. Zhang, M.-H. Lee, "Gate Metallization for Integrated Circuit Structures," US Patent Application 18/978,319 filed Dec. 12, 2024. 

3. G. Xu, L. Baumgartel, T. Jacroux, O. Golonzka, O. Acton, D. J. Towner, T. Jiang, O. Saadat, M.-H. Lee, T. Chu, A. S. Murthy, N. Duan, and C.-H. Lin, "Contact Over Active Structure with Gate Recess for Gate Insulating Cap Layers for Advanced Integrated Circuit Structure Fabrication," US Patent Application 18/753,899 filed June 26, 2024.

4. G. Xu, T. Chu, K. Zhang, R. Chao, T.-H. Hung, F. Zhang, C.-C. Lin, C. W. Lin, C.-H. Lin, O. Golonzka, T. Ghani, Y. Zhang, M.-H. Lee, "Gate Metallization for Integrated Circuit Structures," US Patent Application 18/978,319 filed Dec. 12, 2024. 

5. R. L. Peterson, M.-H. Lee, A. G. Jacobs, and M. J. Tadjer, "Doped Aluminum-alloyed Gallium Oxide and Ohmic Contacts," US Patent Application 17/940,231 filed Sep. 9, 2022. https://patents.google.com/patent/US20230074175A1/en