Publication List
2022
1. Shan Yin, Yiming Lin, Ronghui Hao, Shoudong Jin, Chuan He, Weigang Yao, Xingjun Li, Qingyuan He, Xiaoqing Pu, Xiaoliang Su, Yanbo Zou, Hui Cai, Kye-Jin Lee, Mike Wang, Harry Guo, Ke Shen, Felix Wang, H.-C. Chiu, Larry Chen, Denis Marcon, and Roy K.-Y. Wong, “Evaluation of Reliability and Lifetime of 650-V GaN-on-Si Power Devices Fabricated on 200-mm CMOS-Compatible Process Platform for High-Density Power Converter Application”, in 34th International Symposium on Power Semiconductor Devices and IC’s (ISPSD), 2022, pp. 93-96. (Corresponding Author)
2. William S.-C. Li, David C. Zhou, H. Yan, J.-F. Zhang, H.-H. Ma, C. Chen, J.-B. Huang, X.-M. Liu, W.-P. Li, Marco Wu, Larry Chen, Felix Wang, Roy K.-Y. Wong, Jeff Zhang, Mark Lee, Echo Cheng, and Andy Han “Dynamic Rdson and Vth Free 15 V E-mode GaN HEMT Delivering Low sFOM of 13.1 mΩ•nC and over 90% Efficiency at 10 MHz for Buck Converter”, in 34th International Symposium on Power Semiconductor Devices and IC’s (ISPSD), 2022, pp. 161-164.
2021
3. Roy K.-Y. Wong, “GaN-on-Si Power Device Platform: Epitaxy, Device, Reliability and Application”, Conference SSDM 2021
(Invited Presentation).
4. Roy K.-Y. Wong, Ronghui Hao, Allen Chou, Y B Zou, J Y Shen, Sichao Li, C Yang, Tiger Hu, F Chen, J H Zhang, Ray Zhang, Kenny Cao, L L Chen, Thomas Zhao, Simon He, Seiya Lee, Martin Zhang, Marco Wu, John Lee, P W Chen, Andy Xie, and Justin Zhang, “Comprehensive GaN-on-Si Power Device Platform: Epitaxy, Device, Reliability and Application”, in Special Issue on GaN technology for next generation power devices, Semicond. Sci. Technol., 2021, 36 064001. (Invited Paper)
2020
5. Zheyang Zheng, Wenjie Song, Li Zhang, Song Yang, Han Xu, Roy K.-Y. Wong, Jin Wei, and K. J. Chen, “Enhancement-Mode GaN p-Channel MOSFETs for Power Integration”, in 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, pp. 525-528. (產學合作)
6. C. Zhou, Han C. Chiu, Jeff Zhang, Roy K.-Y. Wong, Thomas Zhao, Frank Zhang, Martin Zhang, Yanbo Zou, and Larry Chen, “A Massive Adoption Ready 200mm 40V-650V E-mode GaN-on-Si Power HEMTs Technology”, IEEE Applied Power Electronics Conference and Exposition (APEC), 2020, pp. 636-639.
7. C. Zhou, William Li, Jingyu Shen, Leilei Chen, Thomas Zhao, Kent Lin, Martin Zhang, Larry Chen, H. C. Chiu, Jeff Zhang, and Roy K.-Y. Wong, “Reliability of 200mm E-mode GaN-on-Si Power HEMTs”, IEEE International Reliability Physics Symposium (IRPS), 2020, pp. 1-3.
2019
8. Roy K.-Y. Wong, H. C. Chiu, J. H. Zhang, C. Zhou, Thomas Zhao, Y. B. Wu, Henry Liao, Simon He, A. B. Zhang, Y.B. Zou, Seiya Li, Martin Zhang, Macro Wu, John Lee, P.W. Chen, Andy Xie, and Jeff Zhang, “High Performance GaN-on-Si Power Devices with Ultralow Specific On-resistance Using Novel Strain Method Fabricated on 200 mm CMOS-Compatible Process Platform”, in 31th International Symposium on Power Semiconductor Devices IC’s (ISPSD) 2019, pp. 67-70.
9. C. Zhou, Y. Guan, J. Shen, H. Liao, Q. Zhao, C. He, Y. Wu, W. Lin, T. Zhang, Y. Chen, and Roy K.-Y. Wong, “On-Chip Gate ESD Protection for AlGaN/GaN E-Mode Power HEMT Delivering >2kV HBM ESD Capability”, IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2019, pp. 175-176.
2017
10. Gaofei Tang, Alex M. H. Kwan, Roy K.-Y. Wong, Jiacheng Lei, R. Y. Su, F. W. Yao, Y. M. Lin, J. L. Yu, Tom Tsai, H. C. Tuan, Alexander Kalnitsky, and K. J. Chen, “Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform”, in IEEE Electron Device Letters, vol. 38, no. 9, pp. 1282-1285, 2017. (產學合作)
2016
11. Haw-Yun Wu, Ming-Cheng Lin, Nan-Ying Yang, C.T. Tsai, C.B. Wu, Y.S. Lin, Y.C. Chang, P.C. Chen, Roy K.-Y. Wong, M. H. Kwan, C.Y. Chan, F.W. Yao, M.W. Tsai, C.L. Yeh, R.Y. Su, J.L. Yu, F.J. Yang, J.L. Tsai, H.C. Tuan, and Alex Kalnitsky, “GaN cascode performance optimization for high efficient power applications”, 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, pp. 255-258.
2015
12. Roy K.-Y. Wong, M.-H. Kwan, F.-W. Yao, M.-W. Tsai, Y.-S. Lin, Y.-C. Chang, P.-C. Chen, R.-Y. Su, J.-L. Yu, F.-J. Yang, G. P. Lansbergen, C.-W. Hsiung, Y.-A. Lai, K.-L. Chiu, C.F. Chen, M.-C. Lin, H.-Y. Wu, C.- H. Chiang, S.-D. Liu, H. -C. Chiu, P.-C. Liu, C.-M. Chen, C.-Y. Yu, C.-S. Tsai, C.-B. Wu, B. Lin, M.-H. Chang, J.-S. You, S.-P. Wang, L.-C. Chen, Y.-Y. Liao, L.Y. Tsai, Tom Tsai, H.C. Tuan, and Alex Kalnitsky, “A next generation CMOS-compatible GaN-on-Si transistors for high efficiency energy systems”, in IEEE International Electron Devices Meeting (IEDM), 2015, pp. 9.5.1-9.5.4.
2014
13. Man Ho Kwan, Roy K.-Y. Wong, Y. S. Lin, F.W. Yao, M. W. Tsai, Y.-C. Chang, P. C. Chen, R.Y. Su, C.-H. Wu, J. L. Yu, F. J. Yang, G. P. Lansbergen, H.-Y. Wu, M.-C. Lin, C. B. Wu, Y.-A. Lai, C.-W. Hsiung, P.-C. Liu, H.-C. Chiu, C.-M. Chen, C. Y. Yu, H. S. Lin, M.-H. Chang, S.-P. Wang, L. C. Chen, J. L. Tsai, H.C. Tuan, and Alex Kalnitsky, “CMOS-compatible GaN-on-Si field-effect transistors for high voltage power applications”, in IEEE International Electron Devices Meeting (IEDM), 2014, pp. 17.6.1-17.6.4.
14. Roy K.-Y. Wong, Y. S. Lin, C.W. Hsiung, G.P. Lansbergen, M.C. Lin, F.W. Yao, C.J. Yu, P.C. Chen, R.Y. Su, J.L. Yu, P.C. Liu, C.M. Chen, C.H. Chiang, H.C. Chiu, S.D. Liu, Y.A. Lai, C.Y. Yu, F.J. Yang, C. L. Tsai, C. S. Tsai, X. Chen, H.C. Tuan, and Alex Kalnitsky, “AlGaN/GaN MIS-HFET with improvement in high temperature gate bias stress-induced reliability”, in IEEE 26th International Symposium on Power Semiconductor Devices IC’s (ISPSD) 2014, pp. 55-58.
15. G.P. Lansbergen, Roy K.-Y. Wong, Y.S. Lin, J.L. Yu, F.J. Yang, C.L. Tsai, and A.S. Oates, “Threshold voltage drift (PBTI) in GaN D-MODE MISHEMTs: Characterization of fast trapping components”, in IEEE International Reliability Physics Symposium (IRPS), 2014, pp. 6C.4.1-6C.4.6.
16. Yu-Syuan Lin, Roy K.-Y. Wong, G. P. Lansbergen, J.L. Yu, C.J. Yu, C. W. Hsiung, H.C. Chiu, S.D. Liu, P.C. Chen, F.W. Yao, R.Y. Su, C.Y. Chou, C.Y. Tsai, F. J. Yang, C. L. Tsai, C.S. Tsai, X. Chen, H.C. Tuan, and Alex Kalnitsky, “Improved trap-related characteristics on SiNx/AlGaN/GaN MISHEMTs with surface treatment”, in IEEE 26th International Symposium on Power Semiconductor Devices IC’s (ISPSD) 2014, pp. 293-296.
2013
17. Shu Yang, Zhikai Tang, Roy K.-Y. Wong, Yu-Syuan Lin, Cheng Liu, Yunyou Lu, Sen Huang, and K. J. Chen, “High-quality interface in Al2O3/GaN/AlGaN/GaN MIS Structures with in situ pre-gate plasma nitridation”, IEEE Elec. Dev. Lett., vol. 34, No. 12, pp. 1497-1499, 2013. (產學合作)
18. Shu Yang, Zhikai Tang, Roy K.-Y. Wong, Yu-Syuan Lin, Yunyou Lu, Sen Huang, and K. J. Chen, “Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques”, in IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, Dec. 9-11, 2013. (產學合作)
2011
19. Alex Man Ho Kwan, Roy K.-Y. Wong, X. Liu, and K. J. Chen, “High-gain and high-bandwidth AlGaN/GaN high electron mobility transistor comparator with high-temperature operation”, Jpn, J. Appl. Phys. Vol. 50, No. 4, 2011.
2010
20. C.C. Wu, D.W. Lin, A. Keshavarzi, C.H. Huang, C.T. Chan, C.H. Tseng, C.L. Chen, C.Y. Hsieh, Roy K.-Y. Wong, M.L. Cheng, T.H. Li, Y.C. Lin, L.Y. Yang, C.P. Lin, C.S. Hou, H.C. Lin, J.L. Yang, K.F. Yu, M.J. Chen, T.H. Hsieh, Y.C. Peng, C.H. Chou, C.J. Lee, C.W. Huang, C.Y. Lu, F.K. Yang, H.K. Chen, L.W. Weng, P.C. Yen, S.H. Wang, S.W. Chang, S.W. Chuang, T.C. Gan, T.L. Wu, T.Y. Lee, W.S. Huang, Y.J. Huang, Y.W. Tseng, C.M. Wu, Eric Ou-Yang, K.Y. Hsu, L.T. Lin, S.B. Wang, T.M. Kwok, C.C. Su, C.H. Tsai, M.J. Huang, H.M. Lin, A.S. Chang, S.H. Liao, L.S. Chen, J.H. Chen, P.S. Lim, X.F. YU, S.Y. Ku, Y.B. Lee, P.C. Hsieh, P.W. Wang, Y.H. Chiu, S.S. Lin, H.J. Tao, M. Cao, and Y.J. Mii, “High performance 22/20nm FinFET CMOS devices with advanced high-K/metal gate scheme”, International Electron Devices Meeting, 2010, pp. 27.1.1-27.1.4.
21. Alex Man Ho Kwan, Roy K.-Y. Wong, X. Liu, and K. J. Chen, “High-Gain and High-Bandwidth AlGaN/GaN HEMT Comparator”, Int. Conf. on Solid-State Devices and Materials (SSDM2010), Sep. 22-24, 2010.
22. Qi Zhou, Roy K.-Y. Wong, W. Chen, and K. J. Chen, “Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode”, in IEEE Microwave and Wireless Components Letters, vol. 20, no. 5, pp. 277-279, 2010.
23. Roy K.-Y. Wong, W. Chen, and K. J. Chen, “Characterization and analysis of the temperature-dependent on-resistance in AlGaN/GaN lateral field-effect rectifiers”, IEEE Trans. Electron Devices, vol. 57, No. 8, pp. 1924-1929, 2010.
24. Roy K.-Y. Wong, W. Chen, X. Liu, C. Zhou, and K. J. Chen, “GaN Smart Power IC Technology”, Phys. Sta. Sol. (b), 247, No. 7, pp. 1732-1734, 2010.
25. Roy K.-Y. Wong, W. Chen, and K. J. Chen, “Integrated Voltage Reference Generator for GaN Smart Power Chip Technology”, IEEE Trans. Electron Devices, vol. 57, No. 4, pp. 952-955, Apr. 2010.
2009
26. Roy K.-Y. Wong, W. Chen, Qi Zhou, and K. J. Chen, “Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect diodes for High-Temperature Wireless Sensor and RFID Applications”, IEEE Trans. Electron Devices, vol. 56, No. 12, pp. 2888-2894, Dec. 2009.
27. Roy K.-Y. Wong, W. Chen, X. Liu, C. Zhou, and K. J. Chen, “GaN Smart Power IC Technology”, 8th Int. Conf. on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct. 18-23, 2009.
28. Roy K.-Y. Wong, W. Chen, and K. J. Chen, “GaN Zero-Bias RF Mixer Using a Lateral Field-Effect Rectifier”, 2009 Int. Conf. on Solid-State Devices and Materials (SSDM2009),Sendai, Miyagi Japan, Oct. 7-9, 2009.
29. Roy K.-Y. Wong, W. Chen, and K. J. Chen, “Integrated Voltage Reference and Comparator Circuits for GaN Smart Power Chip Technology”, 21st International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2009, pp. 57-60. (Charitat Award (Best Paper): for the Best Young Researcher)
30. Roy K.-Y. Wong, W. Chen, and K. J. Chen, “Wide Bandgap GaN Smart Power Chip Technology”, 2009 Int. Conf. on Compound Semiconductor Manufacturing Technology (CS Matech'09), Tampa, Florida, USA, May 18-21, 2009.
31. Qi Zhou, Roy K.-Y. Wong, W. Chen, and K. J. Chen, “High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode”, IEEE Electrical Design of Advanced Packaging & Systems Symposium (EDAPS), 2009, pp. 1-4.
32. W. Chen, Roy K.-Y. Wong, and K. J. Chen, “HEMT-compatible lateral field-effect rectifier using CF4 plasma treatment”, Phys. Sta. Sol. (c), vol. 6, No. S2, pp. S948-S951, 2009.
33. W. Chen, Roy K.-Y. Wong, and K. J. Chen, “Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT”, in IEEE Electron Device Letters, vol. 30, no. 5, pp. 430-432, 2009.
34. K. J. Chen, Roy K.-Y. Wong, W. J. Chen, C. Zhou, and X. Liu, “Device Technology Platform for GaN Smart Power ICs”, 2009 Int. Electron Device and Material Symposium (IEDMS2009), Taoyuan, Taiwan, Nov. 18-21, 2009.
35. Q. Zhou, Roy K.-Y. Wong, W. J. Chen, and K. J. Chen, “Zero-Bias Microwave Detectors Using AlGaN/GaN HEMT-Compatible Lateral Field-Effect Rectifier (L-FER)”, 8th Topical Workshop on Heterostructure Microelectronics (TWHM2009), Mielparque-Nagano, Nagano, Japan, Aug. 25-28, 2009.
2008
36. Roy K.-Y. Wong, W. Chen, and K. J. Chen, “High Temperature Performance of AlGaN/GaN HEMT-Compatible Lateral Field Effect Rectifier”, 2008 Int. Conf. Solid-State Devices and Materials (SSDM08), Tsukuba, Japan, Sep. 23-26, 2008.
37. W. Chen, W. Huang, Roy K.-Y. Wong, and K. J. Chen, “High-Performance AlGaN/GaN HEMT-Compatible Lateral Field-Effect Rectifiers”, 2008 Device Research Conference, 2008, pp. 287-288.
38. W. Chen, Roy K.-Y. Wong, and K. J. Chen, “Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters”, IEEE International Electron Devices Meeting, 2008, pp. 1-4.
39. W. Chen, Roy K.-Y. Wong, and K. J. Chen, “High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors”, Appl. Phys. Lett., vol. 92, 253501, 2008.
40. W. Chen, Roy K.-Y. Wong, and K. J. Chen, “Monolithic Integration of Lateral Field Effect Rectifier with Normally-off HEMT for GaN-on-Si Switch-mode Power Supply Converters”, Int. Electron Device Meeting (IEDM08), San Francisco, USA, Dec. 15-17, 2008.
41. W. Chen, Roy K.-Y. Wong, W. Huang, and K. J. Chen, “High Temperature Operation of Normally-off AlGaN/GaN Power HEMTs using CF4 Plasma Treatment”, The 9th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT08), Beijing, China, Oct. 20-23, 2008.
42. W. Chen, Roy K.-Y. Wong, and K. J. Chen, “HEMT-Compatible Lateral Field Effect Rectifier Using CF4 Plasma Treatment”, 2008 Int. Workshop on Nitride Semiconductors (IWN2008), Montreux, Switzerland, Oct. 6-10, 2008.
43. W. Chen, Roy K.-Y. Wong, W. Huang, and K. J. Chen, “High-Performance AlGaN/GaN HEMT-Compatible Lateral Field-Effect Rectifiers”, 66th Device Research Conference (DRC), June 22-25, 2008.
2007
44. Roy K.-Y. Wong, W. Tang, Kei May Lau, and K. J. Chen, “Surface Acoustic Wave Device on AlGaN/GaN Heterostructure Using Two-Dimensional Electron Gas Inter-digital Transducers”, Appl. Phys. Lett., vol. 90, 213506, May 2007.
45. Roy K.-Y. Wong, W. Tang, Kei May Lau, and K. J. Chen, “Two-dimensional Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN Heterostructures”, 7th IEEE Conference on Nanotechnology (IEEE NANO), 2007, pp. 1041-1044.
2006
46. Roy K.-Y. Wong, W.-Y. Tam; K. J. Chen, “Analysis of SAW Filter Fabricated on Anisotropic Substrate Using Finite-Difference Time-Domain Method”, in IEEE Ultrasonics Symposium, 2006, pp. 96-99.
47. Roy K.-Y. Wong, W.-Y. Tam; K. J. Chen, “Planar Integration of SAW Filter with HEMT on AlGaN/GaN Heterostructure Using Fluoride-based Plasma Treatment”, in IEEE Ultrasonics Symposium, 2006, pp. 281-284.
2005
48. Roy K.-Y. Wong, and W.-Y. Tam, “Analysis of the frequency response of SAW filters using finite-difference time-domain method”, IEEE Trans. on Microwave theory and techniques, 2005, v. 53, no. 11, pp. 3364-3370.
49. Roy K.-Y. Wong, and W.-Y. Tam, “Analysis of the frequency response of SAW filters using finite-difference time-domain method”, IEEE International Microwave Symposium (IMS), 2005, pp. 281-284. (Final List of Student Paper Competition)