Research Interests

Wide-Bandgap Semiconductor for Power Electronics and Radio Frequency Applications:

Device physics and design, Advance process technology, Characterization and modelling, Device and system-level reliability, Thermal management & Advance packaging technology, and Circuit topology.

Opening for Research Student and Postdoctoral Researcher Applications

Biography

Prof. Wong received a B.Eng. with First Class Honor and a M.Phil degrees in Department of Electronic and Information Engineering from Hong Kong Polytechnic University in 2002 and 2005, respectively. He obtained a Ph.D. degree in electronic and computer engineering from Hong Kong University of Science and Technology (HKUST) in 2009. In his Ph.D. studies, he focused on design and technology development of wide-bandgap gallium nitride (GaN) power and RF devices. He has twenty year academic and industrial experiences on GaN device & IC and Si CMOS technology developments. From Sept. 2009 to Dec. 2017, he worked at the R&D division of TSMC developing the technology platform of advance CMOS, GaN-on-Si power and RF devices. His work at TSMC covered power and RF device design, process and characterization. He successfully led the new GaN projects from R&D to mass production. From Dec. 2017 to Feb. 2023, he was the top leader of R&D team in a start-up IDM company and was responsible for setting up and managing multi-functions including product, device, package, process & integration, reliability, failure analysis, modelling and advance testing teams to develop GaN power IC products. He established the world’s first 8-inch commercial GaN-on-Si product line which passed industrial qualification and mass production.

Prof. Wong has demonstrated many novel devices including the first GaN smart power IC prototype, an electro-mechanical transducer using two-dimensional electron gas (2DEG) in GaN-based heterojunctions, a zero-bias GaN-based mixer for high-temperature wireless sensing and RFID applications, a GaN-based power transistor with ultralow specific on-resistance by a strain engineering. He is a pioneer in developing and understanding the stability and reliability issues of GaN-based power devices. His presentation on the 1st GaN power integrated circuit won the Charitat Award for the Best Young Researcher in the 21st International Symposium on Power Semiconductor Devices and ICs (ISPSD) in 2009. He has authored and co-authored 49 international literatures. In his industrial career, 313 patents on GaN and Si device technology have been applied and granted. His capability and contributions to the GaN-based device field are recognized internationally, and he has been invited to join the technical program committees of ISPSD and WiPDA (Workshop on Wide Bandgap Power Device and Applications) since 2023.

Prof. Wong joined National Tsing Hua University (NTHU) in 2023, where he is currently an associate professor in the institute of Electronics Engineering, Department of Electrical Engineering. His research interests are wide-Bandgap semiconductor power and RF device technology, GaN power device & ICs, GaN-based power converters with high-efficiency and high power-density power, RF circuit design.