Publications

査読付き論文

1. M. Raji, S. Balakrishnapillai Suseela, S. Manikkam, G. Anbazhagan, K. Kutsukake, K. Thamotharan, R. Rajavel, N. Usami, R. Perumalsamy, "Exploring mc-Silicon Wafers: Utilizing Machine Learning to Enhance Wafer Quality Through Etching Studies", Cryst. Res. Tech. 59 (4), 2300279 (2004). DOI: 10.1002/crat.202300279

2. Y. Nakanishi, K. Kutsukake, Y. Dang, S. Harada, M. Tagawa, T. Ujihara, "Analysis of Macrostep Interaction via Carbon Diffusion Field in SiC Solution Growth", J. Cryst. Growth 631, 127609 (2024). DOI: 10.1016/j.jcrysgro.2024.127609

3. K. Kutsukake, "Review of Machine Learning Applications for Crystal Growth Research", J. Cryst. Growth 630, 127598 (2024). DOI:10.1016/j.jcrysgro.2024.127598

4. K. Yamakoshi, Y. Ohno, K. Kutsukake, T. Kojima, T. Yokoi, H. Yoshida, H. Tanaka, X. Liu, H. Kudo, and N. Usami, “Multicrystalline Informatics Applied to Multicrystalline Silicon for Unraveling the Microscopic Root Cause of Dislocation Generation”, Adv. Mat., 36(8),  2308599 (2024). DOI: 10.1002/adma.202308599

5. R. Sato, K. Kutsukake, S. Harada, M. Tagawa, and T. Ujihara, “Machine Learning for Semiconductor Process Simulation Described by Coupled Partial Differential Equations”, Adv. Theory Simul. 6, 2300218-1-8 (2023). DOI: 10.1002/adts.202300218 

6. K. Hara, T. Kojima, K. Kutsukake, H. Kudo, and N. Usami, “A machine learning-based prediction of crystal orientation for multicrystalline materials”, APL machine learning 1, 026113-1-9 (2023). DOI: 10.1063/5.0138099

7. T. Deshimaru, K. Yamakoshi, K. Kutsukake, T. Kojima, T. Umehara, H. Udono, and N. Usami, “Analysis of grain growth behavior of multicrystalline Mg2Si”, Jpn. J. Appl. Phys. 62, SD1002-1-5 (2023). DOI: 10.35848/1347-4065/aca032

8. Dang, X. Liu, C. Zhu, Y. Fukami, S. Ma, H. Zhou, X. Liu, K. Kutsukake, S. Harada, and T. Ujihara, “Modeling-Based Design of the Control Pattern for Uniform Macrostep Morphology in Solution Growth of SiC”, Cryst. Growth Des. 23 (2), 1023–1032 (2023). DOI: 10.1021/acs.cgd.2c01194

9. S. Kusakawa, S. Takeno, Y. Inatsu, K. Kutsukake, S. Iwazaki, T. Nakano, T. Ujihara, M. Karasuyama, and I. Takeuchi, “Bayesian Optimization for Cascade-Type Multistage Processes”, Neural Comput. 34 (12), 2408–2431 (2022). DOI: 10.1162/neco_a_01550

10. X. Liu, Y. Dang, H. Tanaka, Y. Fukuda, K. Kutsukake, T. Kojima, T. Ujihara, and N. Usami, “Data-Driven Optimization and Experimental Validation for the Lab-Scale Mono-Like Silicon Ingot Growth by Directional Solidification”, ACS Omega 7(8), 6665-6673 (2022). DOI: 10.1021/acsomega.1c06018

11. M. Isono, S. Harada, K. Kutsukake, T. Yokoyama, M. Tagawa, and T. Ujihara, “Optimization of Flow Distribution by Topological Description and Machine Learning in Solution Growth of SiC”, Adv. Theory Simul. 5, 2200302-1-7 (2022). DOI: 10.1002/adts.202200302

12. Y. Fukuda, K. Kutsukake, T. Kojima, and N. Usami, “Study on electrical activity of grain boundaries in silicon through systematic control of structural parameters and characterization using a pretrained machine learning model”, J. Appl. Phys. 132, 025102-1-8 (2022). DOI: 10.1063/5.0086193

13. H. Kato, S. Kamibeppu, T. Kojima, T. Matsumoto, H. Kudo, Y. Takeuchi, K. Kutsukake, and N. Usami, “Estimation of Crystal Orientation of Grains on Polycrystalline Silicon Substrate by Recurrent Neural Network”, IEEJ Transactions on Electrical and Electronic Engineering, 17, 1685-1687 (2022). DOI: 10.1002/tee.23676

14. Y. Dang, K. Kutsukake, X. Liu, Y. Inoue, XB. Liu, S. Seki, C. Zhu, S. Harada, M. Tagawa, and T. Ujihara, “A Transfer Learning-Based Method for Facilitating the Prediction of Unsteady Crystal Growth”, Adv. Theory Simul. 5, 2200204-1-8 (2022). DOI: 10.1002/adts.202200204

15. K. Kutsukake, Y. Nagai, and H. Banba, “Virtual experiments of Czochralski growth of silicon using machine learning: Influence of processing parameters on interstitial oxygen concentration”, J. Cryst. Growth 584, 126580-1-5. (2022). DOI: 10.1016/j.jcrysgro.2022.126580

16. Y. Fukuda, K. Kutsukake, T. Kojima, and N. Usami, “Effects of grain boundary structure and shape of the solid-liquid interface on the growth direction of the grain boundaries in multicrystalline silicon”, CrystEngComm 24(10), 1948-1954 (2022). DOI: 10.1039/d1ce01573g

17. K. Kutsukake, K. Mitamura, N. Usami, and T. Kojima, “Direct prediction of electrical properties of grain boundaries from photoluminescence profiles using machine learning”, Appl. Phys. Lett. 119(3) 032105-1-6 (2021). DOI: 10.1063/5.0049847

18. S. Miyagawa, K. Gotoh, K. Kutsukake, Y. Kurokawa, and N. Usami, “Application of Bayesian optimization for high-performance TiOx/SiOy/c-Si passivating contact”, Sol. Energy Mater Sol. Cells 230, 111251-1-7 (2021). DOI: 10.1016/j.solmat.2021.111251

19. H. Kudo, T. Matsumoto, K. Kutsukake, N. Usami, “Occurrence Prediction of Dislocation Regions in Photoluminescence Image of Multicrystalline Silicon Wafers Using Transfer Learning of Convolutional Neural Network”, IEICE Transactions on Fundamentals of Electronics Commuications and computer Sciences E104A(6), 857-865 (2021). DOI: 10.1587/transfun.2020IMP0010

20. W. Yu, C. Zhu, Y. Tsunooka, W. Huang, Y. Dang, K. Kutsukake, S. Harada, M. Tagawa and T. Ujihara, “Geometrical design of a crystal growth system guided by a machine learning algorithm”, CrystEngComm 23(14), 2695-2702 (2021). DOI: 10.1039/d1ce00106j

21. Y. Dang, C. Zhu, M. Ikumi, M. Takaishi, W. Yu, W. Huang, X. Liu, K. Kutsukake, S. Harada, M. Tagawa and T. Ujihara, “Adaptive process control for crystal growth using machine learning for high-speed prediction: application to SiC solution growth”, CrystEngComm 23(9), 1982-1990 (2021). DOI: 10.1039/d0ce01824d

22. S. Miyagawa, K. Gotoh, K. Kutsukake, Y. Kurokawa, and N. Usami, “Application of Bayesian optimization for improved passivation performance in TiOx/SiOy/c-Si heterostructure by hydrogen plasma treatment”, Appl. Phys. Express 14(2), 025503-1-5 (2021). DOI: 10.35848/1882-0786/abd869

23. Y. Ohno, T. Tamaoka, H. Yoshida, Y. Shimizu, K. Kutsukake, Y. Nagai, N. Usami, “Origin of recombination activity of non-coherent sigma 3{111} grain boundaries with a positive deviation in the tilt angle in cast-grown silicon ingots”, Appl. Phys. Express 14(1), 011002-1-4 (2021). DOI: 10.35848/1882-0786/abd0a0

24. K. Kutsukake, Y. Nagai, T. Horikawa, and H. Banba, “Real-time prediction of interstitial oxygen concentration in Czochralski silicon using machine learning”, Appl. Phys. Express 13(12), 125502-1-4 (2020). DOI: 10.35848/1882-0786/abc6ec

25. Y. Ohno, K. Tajima, K. Kutsukake, N. Usami, “Generation of dislocation clusters at triple junctions of random angle grain boundaries during cast growth of silicon ingots”, Appl. Phys. Express 13(10), 105505-1-4 (2020). DOI: 10.35848/1882-0786/abbb1c

26. K. Mitamura, K. Kutsukake, T. Kojima, and N. Usami, “Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation”, J. Appl. Phys. 128(12), 125103-1-9 (2020). DOI: 10.1063/5.0017823

27. K. Osada, K. Kutsukake, J. Yamamoto, S. Yamashita, T. Kodera, Y. Nagai, T. Horikawa, K. Matsui, I. Takeuchi and T. Ujihra, “Adaptive Bayesian optimization for epitaxial growth of Si thin films under various constraints”, Mater. Today Commun. 25, 101538-1-6 (2020). DOI: 10.1016/j.mtcomm.2020.101538

28. I. Yonenaga, and K. Kutsukake, “Transmission behavior of dislocations against Sigma 3 twin boundaries in Si”, J. Appl. Phys. 127(7), 075107-1-8 (2020). DOI: 10.1063/1.5139972

29. A. Boucetta, K. Kutsukake, T. Kojima, H. Kudo, T. Matsumoto, and N. Usami, “Application of artificial neural network to optimize sensor positions for accurate monitoring: an example with thermocouples in a crystal growth furnace”, Appl. Phys. Express 12(12), 125503-1-5 (2019). DOI: 10.7567/1882-0786/AB52A9

30. A. L. Foggiatto, Y. Takeichi, K. Ono, H. Suga, Y. Takahashi, M. A. Fusella, J. T. Dull, B. P. Rand, K. Kutsukake, and T. Sakurai, “Study of local structure at crystalline rubrene grain boundaries via scanning transmission X-ray microscopy”, Organic Electronics 74, 315–320 (2019). DOI: 10.1016/J.ORGEL.2019.07.021

31. A. L. Foggiatto, H. Suga, Y. Takeichi, K. Ono, Y. Takahashi, K. Kutsukake, T. Ueba, S. Kera, and T. Sakurai, “Dependence of substrate work function on the energy-level alignment at organic–organic heterojunction interface”, Jpn. J. Appl. Phys. 58, SBBG06-1-8 (2019). DOI: 10.7567/1347-4065/AAFFBF

32. Y. Hayama, T. Matsumoto, T. Muramatsu, K. Kutsukake, H. Kudo, N. Usami, “3D visualization and analysis of dislocation clusters in multicrystalline silicon ingot by approach of data science”, Sol. Energ. Mater. Sol. Cells 189, 239-244 (2019). DOI: 10.1016/J.SOLMAT.2018.06.008

33. I. Yonenaga, M. Deura, Y. Tokumoto, K. Kutsukake, Y. Ohno, “Insight into physical processes controlling the mechanical properties of the wurtzite group-III nitride family”, J. Cryst. Growth 500, 23-27 (2018). DOI: 10.1016/J.JCRYSGRO.2018.08.001

34. R. Nakayama, T. Kojima, A. Ogura, K. Kutsukake, “Distribution of light-element impurities in Si crystals grown by seed-casting method”, Jpn J. Appl. Phys. 57(8), 08RB19-1-5 (2018). DOI: 10.7567/JJAP.57.08RB19

35. Y. Ohno, H. Morito, K. Kutsukake, I. Yonenaga, T. Yokoi, A. Nakamura, K. Matsunaga, “Interaction of sodium atoms with stacking faults in silicon with different Fermi levels”, Appl. Phys. Express 11(6), 061303-1-4 (2018). DOI: 10.7567/APEX.11.061303

36. T. Muramatsu, Y. Hayama, K. Kutsukake, K. Maeda, T. Matsumoto, H. Kudo, K. Fujiwara, N. Usami, “Application of weighted Voronoi diagrams to analyze nucleation sites of multicrystalline silicon ingots”, J. Cryst. Growth 499, 62-66 (2018). DOI: 10.1016/J.JCRYSGRO.2018.07.028

37. M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga, T. Taniguchi, “Mechanical Properties of Cubic-BN(111) Bulk Single Crystal Evaluated by Nanoindentation”, Phys. Status Solidi B 255(5), 1700473-1-4 (2018). DOI: 10.1002/PSSB.201700473

38. Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama, “Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations”, J. Microscopy 268(3), 230-238 (2017). DOI: 10.1111/JMI.12602

39. Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, “Impact of local atomic stress on oxygen segregation at tilt boundaries in silicon”, Appl. Phys. Lett. 110(6), 062105-1-5 (2017). DOI: 10.1063/1.4975814

40. M. Deura, K. Kutsukake, Y. Ohno, I. Yonenaga, T. Taniguchi, “Nanoindentation measurements of a highly oriented wurtzite-type boron nitride bulk crystal”, Jpn. J. Appl. Phys. 56(3), 030301-1-4 (2017). DOI: 10.7567/JJAP.56.030301

41. Y. Ohno, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, H. Yoshida, and S. Takeda, “Recombination active of nikel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals”, Appl. Phys. Lett. 109(14), 142105-1-4 (2016). DOI: 10.1063/1.4964440

42. S. Joonwichien, I. Takahashi, K. Kutsukake, and N. Usami, “Effect of grain boundary character of multicrystalline Si on external and internal (phosphorus) gettering of impurities”, Prog. Photovolt. 24(12), 1615-1625 (2016). DOI: 10.1002/PIP.2795

43. K. Kutsukake, M. Deura, Y. Ohno, and I. Yonenaga, “Characterization of silicon ingots: Mono-like versus high-performance multicrystalline”, Jpn. J. Appl. Phys. 54(8), 08KD10-1-5 (2015). DOI: 10.7567/JJAP.54.08KD10

44. Y. Ohno, K. Inoue, K. Fujiwara, M. Deura, K. Kutsukake, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, and Y. Nagai, “Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals”, Appl. Phys. Lett. 106(25), 25160-1-4 (2015). DOI: 10.1063/1.4921742

45. Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, T. Ohsawa, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, and H. Otubo, “Nanoscopic mechanism of Cu precipitation at small-angle tilt boundaries in Si”, Phys. Rev. B 91(23), 235315-1-5 (2015). DOI: 10.1103/PHYSREVB.91.235315

46. I. Yonenaga, Y. Ohkubo, M. Deura, K. Kutsukake, Y. Tokumoto, Y. Ohno, A. Yoshikawa, and X. Q. Wang, “Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides”, AIP Advances 5(7), 07713-1-13 (2015). DOI: 10.1063/1.4926966

47. I. Yonenaga, T. Taishi, K. Inoue, R. Gotoh, K. Kutsukake, Y. Tokumoto, and Y. Ohno, “Czochralski growth of heavily tin-doped Si crystals”, J. Cryst. Growth 395, 94-97 (2014). DOI: 10.1016/J.JCRYSGRO.2014.02.052

48. K. Inoue, T. Taishi, Y. Tokumoto, K. Kutsukake, Y. Ohno, T. Ohsawa, R. Gotoh, and I. Yonenaga, “Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements”, J. Cryst. Growth 393, 45-48 (2014). DOI: 10.1016/J.JCRYSGRO.2013.10.033

49. Y. Ohno, H. Koizumi, Y. Tokumoto, K. Kutsukake, H. Taneichi, and I. Yonenaga, “Slip systems in wurtzite ZnO activated by Vickers indentation on {2-1-1} and {10-1} surfaces at elevated temperatures”, J. Cryst. Growth 393, 119-122 (2014). DOI: 10.1016/J.JCRYSGRO.2013.11.033

50. K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto, and I. Yonenaga, “Mono-like silicon growth using functional grain boundaries to limit area of multicrsytalline grains”, IEEE J. Photovolt. 4(1), 84-87 (2014). DOI: 10.1109/JPHOTOV.2013.2281730

51. Y. Ohno, K. Inoue, Y. Tokumoto, K. Kutsukake, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, and Y. Nagai, “Three-dimensional evaluation of gettering ability of Sigma 3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy”, Appl. Phys. Lett. 103(10), 102102-1-3 (2013). DOI: 10.1063/1.4820140

52. K. Nakajima, R. Murai, K. Morishita, and K. Kutsukake, “Growth of Si single bulk crystals with low oxygen concentrations by the noncontact crucible method using silica crucibles without Si3N4 coating”, J. Cryst. Growth 372, 121-128 (2013). DOI: 10.1016/J.JCRYSGRO.2013.03.024

53. K. Inoue, T. Taishi, Y. Tokumoto, Y. Murao, K. Kutsukake, Y. Ohno, M. Suezawa, and I. Yonenaga, “Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies”, J. Appl. Phys. 113(7), 073501-1-5 (2013). DOI: 10.1063/1.4792061

54. K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto, and I. Yonenaga, “Control of grain boundary propagation in mono-like Si: utilization of functional grain boundaries”, Appl. Phys. Express 6(2), 025505-1-3 (2013). DOI: 10.7567/APEX.6.025505

55. Y. Tokumoto, K. Kutsukake, Y. Ohno, and I. Yonenaga, “Dislocation structure in AlN films induced by in situ transmission electron microscope nanoindentation”, J. Appl. Phys. 112(9), 093526-1-6 (2012). DOI: 10.1063/1.4764928

56. K. Nakajima, K. Morishita, R. Murai, and K. Kutsukake, “Growth of high-quality multicrystalline Si ingots using noncontact crucible method”, J. Cryst. Growth 355, 38-45 (2012). DOI: 10.1016/J.JCRYSGRO.2012.06.034

57. K. Kutsukake, H. Ise, Y. Tokumoto, Y. Ohno, K. Nakajima, and I. Yonenaga, “Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth”, J. Cryst. Growth 352, 173-176 (2012). DOI: 10.1016/J.JCRYSGRO.2012.02.004

58. K. Nakajima, R. Murai, K. Morishita, K. Kutsukake, and N. Usami, “Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress”, J. Cryst. Growth 344, 6-11 (2012). DOI: 10.1016/J.JCRYSGRO.2012.01.051

59. K. Inoue, Y. Tokumoto, K. Kutsukake, Y. Ohno, and I. Yonenaga, “Growth of heavily indium doped Si crystals by co-doping of neutral impurity carbon or germanium “, Key Eng. Mater. 508, 220-223 (2012). DOI: 10.4028/WWW.SCIENTIFIC.NET/KEM.508.220

60. K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, I. Yonenaga, K. Morishita, and K. Nakajima, “Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth”, J. Appl. Phys. 110(8), 083530-1-5 (2011). DOI: 10.1063/1.3652891

61. K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, K. Morishita, and K. Nakajima, “Formation mechanism of twin boundaries during crystal growth of silicon”, Scrip. Mater. 65(6), 556-559 (2011). DOI: 10.1016/J.SCRIPTAMAT.2011.06.028

62. N. Usami, I. Takahashi, K. Kutsukake, K. Fujiwara, and K. Nakajima, “Implementation of faceted dendrite growth on floating cast method to realize high-quality multicrystalline Si ingot for solar cells”, J. Appl. Phys. 109(8), 083527-1-4 (2011). DOI: 10.1063/1.3576108

63. K. Nakajima, K. Kutsukake, K. Fujiwara, K. Morishita, and S. Ono, “Arrangement of dendrite crystals grown along the bottom of Si ingots using the dendritic casting method by controlling thermal conductivity under crucibles”, J. Cryst. Growth 319, 13-18 (2011). DOI: 10.1016/J.JCRYSGRO.2011.01.069

64. M. Tokairin, K. Fujiwara, K. Kutsukake, H. Kodama, N. Usami, and K. Nakajima, “Pattern formation of a periodically faceted interface during crystallization of Si”, J. Cryst. Growth 312, 3670-3674 (2010). DOI: 10.1016/J.JCRYSGRO.2010.09.059

65. I. Takahashi, N. Usami, K. Kutsukake, K. Morishita, and K. Nakajima, “Computational investigation of relationship between shear stress and multicrystalline structure in silicon”, Jpn. J. Appl. Phys. 49(4), 04DP01-1-4 (2010). DOI: 10.1143/JJAP.49.04DP01

66. I. Takahashi, N. Usami, K. Kutsukake, G. Stokkan, K. Morishita, and K. Nakajima, “Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed”, J. Cryst. Growth 312, 897-901 (2010). DOI: 10.1016/J.JCRYSGRO.2010.01.011

67. N. Usami, R. Yokoyama, I. Takahashi, K. Kutsukake, K. Fujiwara, and K. Nakajima, “Relationship between grain boundary structures in Si multicrystals and generation of dislocations during crystal growth”, J. Appl. Phys. 107(1), 013511-1-5 (2010). DOI: 10.1063/1.3276219

68. K. Fujiwara, S. Tsumura, M. Tokairin, K. Kutsukake, N. Usami, S. Uda, and K. Nakajima, “Growth behavior of faceted Si crystals at grain boundary formation”, J. Cryst. Growth 312, 19-23 (2009). DOI: 10.1016/J.JCRYSGRO.2009.09.055

69. M. Tokairin, K. Fujiwara, K. Kutsukake, N. Usami, and K. Nakajima, “Formation mechanism of the faceted interface: in-situ observation of the Si (100) crystal-melt interface during crystallization”, Phys. Rev. B 80(17), 174108-1-4 (2009). DOI: 10.1103/PHYSREVB.80.174108

70. H.Y. Wang, N. Usami, K. Fujiwara, K. Kutsukake, and K. Nakajima, “Microstructures of Si multicrystals and their impact on minority carrier diffusion length”, Acta Mater. 57(11), 3268-3276 (2009). DOI: 10.1016/J.ACTAMAT.2009.03.033

71. K. Kutsukake, N. Usami, T. Ohtaniuchi, K. Fujiwara, and K. Nakajima, “Quantitative analysis of sub-grain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance”, J. Appl. Phys. 105(4), 044909-1-4 (2009). DOI: 10.1063/1.3079504

72. Z. Wang, K. Kutsukake, H. Kodama, N. Usami, K. Fujiwara, Y. Nose, and K. Nakajima, “Influence of growth temperature and cooling rate on the growth of Si epitaxial layer by dropping type liquid phase epitaxy from the pure Si melt”, J. Cryst. Growth 310, 5248-5251 (2008). DOI: 10.1016/J.JCRYSGRO.2008.08.063

73. N. Usami, K. Kutsukake, K. Fujiwara, I. Yonenaga, and K. Nakajima, “Structural origin of a cluster of bright spots in reverse bias electroluminescence image of solar cells based on Si multicrystals”, Appl. Phys. Express 1(7), 075001-1-3 (2008). DOI: 10.1143/APEX.1.075001

74. I. Takahashi, N. Usami, R. Yokoyama, Y. Nose, K. Kutsukake, K. Fujiwara, and K. Nakajima, “Impact of defect density in Si bulk multicrystals on gettering effect of impurities”, Jpn. J. Appl. Phys. 47, 8790-8792 (2008). DOI: 10.1143/JJAP.47.8790

75. N. Usami, K. Kutsukake, K. Fujiwara, and K. Nakajima, “Modification of local structures in multicrystals revealed by spatially resolved x-ray rocking curve analysis”, J. Appl. Phys. 102(10), 103504-1-4 (2007). DOI: 10.1063/1.2816207

76. K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose, and K. Nakajima, “Influence of structural imperfection of Sigma 5 grain boundaries in bulk multicrystalline Si on their electrical activities”, J. Appl. Phys. 101(6), 063509-1-6 (2007). DOI: 10.1063/1.2710348

77. N. Usami, K. Kutsukake, K. Nakajima, S. Amtablian, A. Fave, and M. Lemiti, “Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous layer”, Appl. Phys. Lett. 90(3), 031915-1-3 (2007). DOI: 10.1063/1.2433025

78.  K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose, T. Sugawara. T. Shishido, and K. Nakajima, “Modification of local structure and its influence on electrical activity of near (310) sigma 5 grain boundary in bulk silicon”, Mater. Trans. 48(2), 143-147 (2007). DOI: 10.2320/MATERTRANS.48.143

79. N. Usami, K. Kutsukake, T. Sugawara, K. Fujiwara, W. Pan, Y. Nose, T. Shishido, and K. Nakajima, “Realization of bulk multicrystalline silicon with controlled grain boundaries by utilizing spontaneous modification of grain boundary configuration”, Jpn. J. Appl. Phys. 45, 1734-1737 (2006). DOI: 10.1143/JJAP.45.1734

80. M. Kitamura, N. Usami, T. Sugawara, K. Kutsukake, K. Fujiwara, Y. Nose, T. Shishido, and K. Nakajima, “Growth of multicrystalline Si with controlled grain boundary configuration by the floating zone melting method”, J. Cryst. Growth 280, 419-424 (2005). DOI: 10.1016/J.JCRYSGRO.2005.04.049

81. N. Usami, M. Kitamura, T. Sugawara, K. Kutsukake, K. Ohdaira, Y. Nose, K. Fujiwara, T. Shishido, and K. Nakajima, “Floating zone growth of Si bicrystals using seed crystals with artificially designed grain boundary configuration”, Jpn. J. Appl. Phys. 44, L778-L780 (2005). DOI: 10.1143/JJAP.44.L778

82. N. Usami, K. Kutsukake, W. Pan, T. Ujihara, K. Fujiwara, T. Yokoyama, and K. Nakajima, “Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained Si layer”, J. Cryst. Growth 275, e1203-e1207 (2005). DOI: 10.1016/J.JCRYSGRO.2004.11.141

83. K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, and K. Nakajima, “On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates”, Appl. Phys. Lett. 85, 1335-1337 (2004). DOI: 10.1063/1.1784036

84. K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa, “Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate”, Appl. Sur. Sci. 224, 95-98 (2004). DOI: 10.1016/J.APSUSC.2003.08.100

85. K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, B. P. Zhang, Y. Segawa, and K. Nakajima, “Fabrication of SiGe-on-insulator through thermal diffusion of Ge on Si-on-insulator substrate”, Jpn. J. Appl. Phys. 42, L232-L234 (2003). DOI: 10.1143/JJAP.42.L232

国際会議プロシーディングス

1. K. Kutsukake, “Application of Machine Learning for Crystal Growth of Bulk and Film Silicon”, Proceedings of AM-FPD 21: The Twenty-eighth International Workshop on Active-Matrix Flatpanel Displays and Devices – TFT Technology and FPD Materials, (2021), pp.8-10.

2. Y. Ohno, K. Tajima, K. Kutsukake, and N. Usami, “Structural properties of triple junctions acting as dislocation sources in high-performance Si ingots”, Proceedings of 47th IEEE Photovoltaics Specialists Conference, (2020), pp.2340-2340.

3. K. Kutsukake, “Application of data science techniques to crystalline silicon research for solar cells”, Proceeding of the 29th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, (2019), pp.33-35.

4. K. Kutsukake, Y. Hayama, T. Matsumoto, H. Kudo, T. Yokoi, Y. Ohno, and N. Usami, “Generation and propagation of dislocations in multicrystalline silicon for solar cells”, Proceeding of the International Symposium on Modeling of Crystal Growth Processes and Devices, (2019), pp.36-37.

5. K. Kutsukake, Y. Hayama, T. Matsumoto, H. Kudo, T. Yokoi, Y. Ohno, and N. Usami, “Generation and propagation of defects in multicrystalline silicon for solar cells”, Proceeding of the 8th Forum on Science and Technology of Silicon Materials, (2018) pp.152-153.

6. K. Kutsukake, M. Deura, Y. Ohno, and I. Yonenaga, “Defect engineering of multicrystalline and mono-like silicon for solar cells: Characterization and control of grain boundaries and dislocations”, Proceeding of the 25th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, (2015) pp.71-76.

7. I. Takahashi, S. Joonwichien, K. Kutsukake, S. Matsushima, I. Yonenaga, and N. Usami, “Improvement of annealing procedure to suppress defect generation during impurity gettering in multicrystalline silicon solar cells”, Proceeding of the 40th Photovoltaic Specialist Conference, (2014) pp.3017-3020.

8. K. Inoue, T. Taishi, Yu, Murao, Y. Tokumoto, K. Kutsukake, Y. Ohno, and I. Yonenaga, “Formation of thermal Double donors in Ge”, Proceedings of the 12th Asia Pacific Physics Conference, JPS Conference Proceedings 1, (2014) 012082-1-4.

9. I. Yonenaga, Y. Ohno, Y. Tokumoto, and K. Kutsukake, “Dislocation activities in Si under high-magnetic-field”, Proceedings of 4th International Conference on Fundamental Properties of Dislocations, (2013) pp.29-32.

10. Y. Murao, T. Taishi, K. Kutsukake, Y. Tokumoto, Y. Ohno, and I. Yonenaga, “Growth of dilute GeSn alloys”, Proceeding of the 7th International Workshop on Modeling of Crystal Growth, (2012) pp.130-131.

11. K. Inoue, Y. Ohno, K. Kutsukake, Y. Tokumoto, and I. Yonenaga, “Czochralski growth of highly In doped Si -Effect of co-doping of C and Ge-”, Proceeding of the 7th International Workshop on Modeling of Crystal Growth, (2012) pp.132-133.

12. N. Usami, I. Takahashi, K. Kutsukake, K. Morishita, and K. Nakajima, “Floating cast method: A technique realize high-quality multicrystalline Si ingot”, Proceedings of 26th European Photovoltaic Solar Energy Conference and Exhibition, (2011) pp.1986-1988.

13. K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, I. Yonenaga, K. Morishita, and K. Nakajima, “Generation mechanism of dislocations in multicrystalline Si during 2D growth”, Proceedings of 26th European Photovoltaic Solar Energy Conference and Exhibition, (2011) pp.1934-1937.

14. K. Nakajima, K. Kutsukake, K. Fujiwara, N. Usami, S. Ono, and I. Yamasaki, “High efficiency solar cells obtained from small size ingots with 30 cmΦ by controlling the distribution and orientation of dendrite crystals grown along the bottom of the ingots”, Proceedings of 35th IEEE Photovoltaic Specialists Conference, (2010) pp.817-819.

15. K. Kutsukake, T. Abe, N. Usami, K. Fujiwara, K. Morishita, and K. Nakajima, “Formation mechanism of twin boundaries in silicon multicrystals during crystal growth”, Proceedings of 35th IEEE Photovoltaic Specialists Conference, (2010) pp.810-811.

16. K. Nakajima, N. Usami, K. Fujiwara, and K. Kutsukake, “Control of microstructures and crystal defects in Si multicrystals grown by the casting method - how to improve the quality of multicrystals to the level of single crystals -”, Proceedings of 24th European Photovoltaic Solar Energy Conference and Exhibition, (2009) pp.21-24.

17. K. Kutsukake, N. Usami, T. Ohtaniuchi, K. Fujiwara, Y. Nose, and K. Nakajima, “A new technique for quantitative analysis of sub-grain boundary density and its influence on minority carrier diffusion length in bulk multicrystalline silicon”, Proceedings of 22nd European Photovoltaic Solar Energy Conference, (2007) pp.1371-1373.

18. K. J. Cieslak, A. Fave, S. Gulkowski, J. M. Olchowik, I. Jozwik, M. Lemiti, K. Kutsukake, W. Pan, and N. Usami, “Examination of crystalline Si thin film solar cells made from epitaxial lateral overgrown layers”, Proceedings of 22nd European Photovoltaic Solar Energy Conference, (2007) pp.2258-2260.

19. N. Usami, K. Kutsukake, K. Fujiwara, and K. Nakajima, “Structural modification in multicrystalline Si during directional solidification revealed by spatially resolved x-ray rocking curve analysis”, Proceedings of 22nd European Photovoltaic Solar Energy Conference, (2007) pp.1104-1105.

20. K. Kutsukake, N. Usami, K. Fujiwara, W. Pan, Y. Nose, and K. Nakajima, “Electrical activities of sigma 5 grain boundaries in bulk multiclystalline Si grown by Bridgman method with configurationally controlled seed crystals”, Proceedings of 21st European Photovoltaic Solar Energy Conference, (2006) pp.1029-1031.

21. K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, and K. Nakajima, “A comparative study of strain field in strained-Si on SiGe-on-Insulator and SiGe virtual substrates”, Proceedings of 2004 Joint International Meeting 206th Meeting of The Electrochemical Society 2004 Fall Meeting of The Electrochemical Society of Japan, (2004) pp.1179-1182.

22. N. Usami, K. Kutsukake, K. Fujiwara, T. Ujihara, G. Sazaki, S. Ito, B. P. Zhang, and K. Nakajima, “Impact of the annealing temperature on the homogeneity of SiGe-on-insulator”, Proceedings of 3rd International Conference of SiGe(C) Epitaxy and Heterostructures, (2003) pp.200-202.

著書

1. 沓掛健太朗, 原田俊太, 宇治原徹, “無機材料プロセス開発MI”, 船津公人監修, “データ駆動型材料開発　～オントロジーとマイニング、計測と実験装置の自動制御～”, エヌ・ティー・エス, 東京, (2021), pp. 131-139.

2. 沓掛健太朗, “結晶成長プロセスへの機械学習応用”, “マテリアルズインフォマティクスのためのデータ作成とその解析、応用事例”, 技術情報協会, 東京, (2021), pp. 311-316.

3. 沓掛健太朗, “第７章問13：MIによる半導体材料関連の開発例とは？”, “第８章第２節問２：MIによるエレクトロニクス/半導体材料関連での研究状況とは？”, マテリアルズインフォマティクスQ＆A集-解析実務と応用事例-, 情報機構, 東京 (2020), pp. 361-366, 479-486.

4. K. Kutsukake, “Growth of crystalline silicon for solar cells: the mono-like method”, Edited by D. Yang, “Handbook of Solar Silicon”, Springer, Berlin (2018), pp. 1-20.

5. 沓掛健太朗, “機能性結晶粒界による超高品質シリコン結晶の実現”, 早瀬修二監修, 太陽光と光電変換機能, シーエムシー出版, 東京 (2016), pp. 27-31.

6. 沓掛健太朗, 宇佐美徳隆, “太陽電池の基礎知識”, 田路和幸監修, “スマートハウスの発電・蓄電・給電技術の最前線”, シーエムシー出版, 東京 (2011), pp. 97-106.

7. 沓掛健太朗, 宇佐美徳隆, 中嶋一雄, “結晶方位解析ならびにエッチピット観察”, 小長井誠, 山口真史, 近藤道雄編著, “太陽電池の基礎と応用”, 培風館, 東京 (2010), pp.71-73.

8. K. Kutsukake, N. Usami, K. Fujiwara, and K. Nakajima, “Fundamental understanding of subgrain boundaries”, Edited by Nakajima and N. Usami, “Advances in Materials Research 14, Crystal Growth of Si for Solar Cells”, Springer, Berlin (2009), pp.83-95.

総説・解説

1. 沓掛健太朗, “AI・インフォマティクス応用について，今思うこと”, 応用物理 92(6), 369-372 (2023). DOI: https://doi.org/10.11470/oubutsu.92.6_369

2. 沓掛健太朗, “実際の結晶成長実験データを用いたインフォマティクス応用の課題と展望”, 日本結晶成長学会誌 49(1), 05-1-8 (2022).

3. 沓掛健太朗, 角岡洋介, 郁万成, 黨一帆, 原田俊太, 宇治原徹, “シミュレーションに基づく結晶成長プロセスインフォマティクス ―溶液法SiCを例に―”, 日本結晶成長学会誌 49(1), 06-1-8 (2022).

4. 沓掛健太朗, “太陽電池研究へのAI応用”, オプトニューズ 16（5）, 15-20 (2021).

5. 沓掛健太朗, “機械学習を活用した実践的なプロセス条件最適化”, ぷらすとす 4(47) p737-739 (2021). DOI: 10.32277/plastos.4.47_737

6. 沓掛健太朗, 長田圭一, 松井孝太, 山本純, “エンジニアの知識と機械学習の融合 シリコンエピタキシャル成長プロセスへのベイズ最適化応用”, 応用物理 89(12), 711-714 (2020). DOI: 10.11470/oubutsu.89.12_711

7. 原田俊太, 林宏益, 角岡洋介, 朱燦, 鳴海大翔, 沓掛健太朗, 宇治原徹, “機械学習を活用したSiC高品質結晶成長条件のデザイン”, まてりあ 59(3), 145-152 (2020). DOI: 10.2320/materia.59.145

8. 沓掛健太朗, 宇佐美徳隆, 大野裕, 徳本有紀, 米永一郎, “太陽電池用擬似単結晶シリコンインゴットの育成”, 技術総合誌OHM 6, 8-9 (2013).

9. 沓掛健太朗, 宇佐美徳隆, 藤原航三, 中嶋一雄, “太陽電池用多結晶シリコン中の亜粒界についての基礎研究”, 日本結晶成長学会誌 36(4), 13-20 (2009).

10. 宇佐美徳隆, 藤原航三, 沓掛健太朗, 中嶋一雄, “太陽電池用高品質シリコンバルク多結晶の製造技術”, 電子材料 48, 10-16 (2009).

11. 沓掛健太朗, 宇佐美徳隆, 藤原航三, 中嶋一雄, “シリコンバルク多結晶太陽電池の粒界設計に向けて”, マテリアルインテグレーション 10, 31-36 (2007).

12. 宇佐美徳隆, 藤原航三, 藩伍根, 沓掛健太朗, 野瀬嘉太郎, 中嶋一雄, “太陽電池用Siバルク多結晶成長技術”, 工業材料 55, 69-72 (2007).

13. 宇佐美徳隆, 沓掛健太朗, 藤原航三, 野瀬嘉太郎, 中嶋一雄, “シリコンバルク多結晶の粒界制御に向けて”, まてりあ 45(10), 720-724 (2006).

受賞

1. 第133回東北大学金属材料研究所講演会, 最優秀ポスター賞, 2017年.

2. 論文奨励賞, 応用物理学会, 2014年.

3. 発表奨励賞, 応用物理学会結晶工学分科会, 2011年.

4. Young Researcher Paper Award, 21th International Photovoltaic Science and Engineering Conference, 2011年.

5. イノベイティブPV奨励賞, 第7回次世代の太陽光発電システムシンポジウム, 2011年.

6. イノベイティブPV奨励賞, 第4回次世代の太陽光発電システムシンポジウム, 2008年.

7. 講演奨励賞, 応用物理学会, 2006年.