Research
Research
Ab initio calculation-based study on electronic materials;
- High-k materials: SrTiO3, LaAlO3, Mg1-xBexO, Hf1-xZrxO2
- Ferroelectric materials: MoS2, Hf1-xZrxO2, Al1-xScxN
- Resistance change materials: TiOx, HfOx, TaOx
- Phase change memory materials: Ge2Sb2Te5
- High mobility channel materials: Ge, III-V compound semiconductors, MoS2
- AOS channel materials for charge trap flash memory, V-DRAM: ZnSnOx
- Transport in post-Si semiconductor devices
- Semiconductor for power devices: SiC
- p-type semiconductor: SnO
Codes & Materials DB;
- Homemade codes: InterPhon, P5Grand
- Materials Informatics Database for Advanced Search (MIDAS): web-based DB on ab initio calculations)
HW;
- Home-made Linux clusters
- Supercomputers at National Supercomputing Center
Link;
- DFT codes: VASP, SIESTA, FHI-AIMS, Quantum Espresso, Phonopy
- MD codes: LAMMPS
- Visualizer: VESTA
- DB: ICSD , Materials Project, NOMAD, OQMD
128M & 256M NAND Flash memory
Al2O3 (sapphire, ruby), MgO, InP, ZrO2, ZnO, etc.