Computational materials science (2004-present)       

•    Ab initio calculation-based study on electronic materials; 

         - High-k materials: SrTiO3, LaAlO3, Mg1-xBexO, Hf1-xZrxO2

     - Ferroelectric materials:  MoS2, Hf1-xZrxO2, Al1-xScxN

     - Resistance change materials: TiOx, HfOx, TaOx

         - Phase change memory materials: Ge2Sb2Te5

         - High mobility channel materials: Ge, III-V compound semiconductors, MoS2

         - AOS channel materials for charge trap flash memory, V-DRAM: ZnSnOx 

         - Transport in post-Si semiconductor devices 

         - Semiconductor for power devices: SiC

         - p-type semiconductor: SnO

•    Codes & Materials DB; 

          - Homemade codes: InterPhon, P5Grand

          - Materials Informatics Database for Advanced Search (MIDAS): web-based DB on ab initio calculations)

•    HW; 

         - Home-made Linux clusters

         - Supercomputers at National Supercomputing Center

•   Link; 

          - DFT codes: VASP, SIESTA, FHI-AIMS, Quantum Espresso, Phonopy

          - MD codes: LAMMPS

         -  Visualizer: VESTA

          - DB: ICSD , Materials Project, NOMAD, OQMD

Memory design (1996-1997)

•    128M & 256M NAND Flash memory 

Microstructure evolution in ceramic materials (1990-2004)

•     Al2O3  (sapphire, ruby), MgO,  InP, ZrO2, ZnO, etc.