Ferroelectric semiconductor 2D Materials are anticipated to realize neuromorphic computer architecture, where information is computed and stored in each of the constituting devices. Combining excellent electronic transport and room-temperature-stable excitonic emission of 2D materials will allow for ferroelectrically reconfigurable optoelectronic devices for neuromorphic applications. 

ToC Image: Kim et al., (In Preparation) 

To fully comprehend and exploit the relationship between the material and device performance, material properties should be resolved on the nanoscale. Operando Kelvin Probe Force Microscopy (KPFM) can quantitatively measure the potential profiles of operating devices, providing a powerful tool to examine the carrier transport schemes in the contacts and junctions. 

ToC Image: Zhuang,* Kim,* et al., PNAS 120, 3, e2216672120 (2023)

2D materials are atomically thin and can withstand extreme levels of mechanical strain without material failure, thus are an optimal system for strain engineering. Out-of-plane strain modulates bandgaps and band offsets of 2D semiconductors. More intriguingly, charge transfer and energy transfer between the layers in heterobilayers can be engineered by controlled strain. Novel 2D device concepts are proposed to employ strain engineering in low-power electronics, strain sensors, and more.

ToC Image: Kim et al., ACS AMI, 14, 46841 (2022)