Joonseok (Jason) Kim, Ph.D.
I am a postdoctoral fellow at Northwestern University. I work with professor Lincoln J. Lauhon to examine novel materials' properties and their device functionalities. My research explores an area where electrical engineering, materials science, and applied physics meet.
I received M.S.E. and Ph.D. in Electrical and Computer Engineering from The University of Texas at Austin, with the supervision of professors Deji Akinwande and Jung-Fu Lin. Before that, I received a B.S. in Electrical Engineering from Seoul National University in Seoul, Korea, where I was born and grew up in.
What I do at a glance
My research focuses on experimentally exploring semiconductor and quantum materials' properties, and implementing them into novel devices. I'm most interested in two-dimensional (2D) materials and their heterostructures with non-volatility or reconfigurability. Combining with other types of materials, devices can mimic neural responses (i.e., neuromorphic devices) to external stimuli (e.g., electric field, light, haptic input, heat, etc.)
My previous work focused on strain engineering 2D materials' properties. 2D materials can withstand an extreme level of strain without material failure, which modulates their optical and electronic properties greatly. Also, by modulating the interlayer interactions using strain, interlayer charge and energy transfers can be modulated.
My expertise span a wide range, from fundamental material characterization to device fabrication, and measurement.
8/30/2022: I am pleased to share that my collaborative research "Readily Accessible Metallic Micro Island Arrays for High-Performance Metal Oxide Thin-Film Transistors" was published on Advanced Materials! Check the paper out at https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.202205871
12/1/2021: I am presenting my recent research at the MRS Fall Meeting, Symposium EQ02: Heterostructures of Various Dimensional Materials. I will present how ferroelectric switching reconfigures excitonic emissions in monolayer MoS₂.