27. Kim, J., Kim, J., Choi, H. S., Han, D. H., Jeong, H. W., Lee, Y., & Park, M. H. (2025). Recent Advances in Hafnium Oxide-Based Ferroelectric Thin-Film Transistors with Oxide Semiconductor Channels. Electronic Materials Letters, 1-26.
26. Han, D. H., Kim, S. Y., Jeong, H. W., Lee, Y., Kim, Y. Y., Jeon, W., & Park, M. H. (2025). Temperature-Dependent {111}-Texture Transfer to Hf0.5Zr0.5O2 Films from {111}-Textured TiN Electrode and Its Impact on Ferroelectricity. ACS applied materials & interfaces, 17(18), 26836-26844.
25. Yang, K., Jeong, H. W., Lee, J., Cho, Y. H., Park, J. Y., Choi, H., ... & Park, M. H. (2025). Texture modulation of ferroelectric Hf0.5Zr0.5O2 thin films by engineering the polymorphism and texture of tungsten electrodes. Journal of Materiomics, 11(4), 101015.
24. Lee, D. H., Kim, J. E., Cho, Y. H., Kim, S., Park, G. H., Choi, H., ... & Park, M. H. (2024). A fluorite-structured HfO2/ZrO2/HfO2 superlattice based self-rectifying ferroelectric tunnel junction synapse. Materials Horizons, 11(21), 5251-5264.
23. Lee, Y., Kim, S. H., Jeong, H. W., Park, G. H., Lee, J., Kim, Y. Y., & Park, M. H. (2024). Mitigation of field-driven dynamic phase evolution in ferroelectric Hf0.5Zr0.5O2 films by adopting oxygen-supplying electrode. Applied Surface Science, 648, 158948. - selected publication
22. Kim, S. H., Lee, Y., Lee, D. H., Park, G. H., Jeong, H. W., Yang, K., ... & Park, M. H. (2024). Depolarization mitigated in ferroelectric Hf0.5Zr0.5O2 ultrathin films (< 5 nm) on Si substrate by interface engineering. Journal of Advanced Ceramics, 13(3), 282-292.
21. Lee, J., Kim, S. H., Choi, H., Jeong, H. W., Yang, K., Park, J. Y., ... & Park, M. H. (2024). Ferroelectricity of Hf0.5Zr0.5O2 Thin Film Induced at 350 oC by Thermally Accelerated Nucleation During Atomic Layer Deposition. IEEE Transactions on Electron Devices, 71(4), 2690-2695.
20. Silva, J. P., Alcala, R., Avci, U. E., Barrett, N., Bégon-Lours, L., Borg, M., ... & Schroeder, U. (2023). Roadmap on ferroelectric hafnia-and zirconia-based materials and devices. APL Materials, 11(8).
19. Lee, D. H., Park, G. H., Kim, S. H., Yang, K., Lee, J., Choi, H., ... & Park, M. H. (2023). Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 Film. IEEE Electron Device Letters, 44(9), 1440-1443.
18. Lee, D. H., Lee, Y., Cho, Y. H., Choi, H., Kim, S. H., & Park, M. H. (2023). Unveiled Ferroelectricity in Well‐Known Non‐Ferroelectric Materials and Their Semiconductor Applications. Advanced Functional Materials, 33(42), 2303956.
17. Hsain, H. A., Lee, Y., Lomenzo, P. D., Alcala, R., Xu, B., Mikolajick, T., ... & Jones, J. L. (2023). Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition. Journal of Applied Physics, 133(22).
16. Lee, Y., Jeong, H. W., Kim, S. H., Yang, K., & Park, M. H. (2023). Effect of stress on fluorite-structured ferroelectric thin films for semiconductor devices. Materials Science in Semiconductor Processing, 160, 107411. - selected publication
15. Park, J. Y., Lee, D. H., Park, G. H., Lee, J., Lee, Y., & Park, M. H. (2023). A perspective on the physical scaling down of hafnia-based ferroelectrics. Nanotechnology, 34(20), 202001.
14. Yang, K., Kim, S. H., Jeong, H. W., Lee, D. H., Park, G. H., Lee, Y., & Park, M. H. (2023). Perspective on ferroelectric devices: lessons from interfacial chemistry. Chemistry of Materials, 35(6), 2219-2237.
13. Hsain, H. A., Lee, Y., Lancaster, S., Lomenzo, P. D., Xu, B., Mikolajick, T., ... & Jones, J. L. (2023). Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface. Nanotechnology, 34(12), 125703.
12. Lee, Y., Broughton, R. A., Hsain, H. A., Song, S. K., Edgington, P. G., Horgan, M. D., ... & Jones, J. L. (2022). The influence of crystallographic texture on structural and electrical properties in ferroelectric Hf0.5Zr0.5O2. Journal of Applied Physics, 132(24). - selected publication
11. Hsain, H. A., Lee, Y., Lancaster, S., Materano, M., Alcala, R., Xu, B., ... & Jones, J. L. (2022). Role of oxygen source on buried interfaces in atomic-layer-deposited ferroelectric hafnia–zirconia thin films. ACS Applied Materials & Interfaces, 14(37), 42232-42244.
10. Payne, A., Alex Hsain, H., Lee, Y., Strnad, N. A., Jones, J. L., & Hanrahan, B. (2022). Thermal stability of antiferroelectric-like Al:HfO2 thin films with TiN or Pt electrodes. Applied Physics Letters, 120(23).
9. Schroeder, U., Mittmann, T., Materano, M., Lomenzo, P. D., Edgington, P., Lee, Y. H., ... & Jones, J. L. (2022). Temperature‐Dependent Phase Transitions in HfxZr1-xO2 Mixed Oxides: Indications of a Proper Ferroelectric Material. Advanced Electronic Materials, 8(9), 2200265.
8. Hsain, H. A., Lee, Y., Materano, M., Mittmann, T., Payne, A., Mikolajick, T., ... & Jones, J. L. (2022). Many routes to ferroelectric HfO2:A review of current deposition methods. Journal of Vacuum Science & Technology A, 40(1).
7. Shekhawat, A., Hsain, H. A., Lee, Y., Jones, J. L., & Moghaddam, S. (2021). Effect of ferroelectric and interface films on the tunneling electroresistance of the Al2O3/Hf0.5Zr0.5O2 based ferroelectric tunnel junctions. Nanotechnology, 32(48), 485204.
6. Lee, D. H., Lee, Y., Yang, K., Park, J. Y., Kim, S. H., Reddy, P. R. S., ... & Park, M. H. (2021). Domains and domain dynamics in fluorite-structured ferroelectrics. Applied Physics Reviews, 8(2). - selected publication
5. Lee, Y., Alex Hsain, H., Fields, S. S., Jaszewski, S. T., Horgan, M. D., Edgington, P. G., ... & Jones, J. L. (2021). Unexpectedly large remanent polarization of Hf0.5Zr0.5O2 metal–ferroelectric–metal capacitor fabricated without breaking vacuum. Applied Physics Letters, 118(1). - selected publication
4. Park, J. Y., Yang, K., Lee, D. H., Kim, S. H., Lee, Y., Reddy, P. R., ... & Park, M. H. (2020). A perspective on semiconductor devices based on fluorite-structured ferroelectrics from the materials–device integration perspective. Journal of Applied Physics, 128(24).
3. Hsain, H. A., Lee, Y., Parsons, G., & Jones, J. L. (2020). Compositional dependence of crystallization temperatures and phase evolution in hafnia-zirconia (HfxZr1− x)O2 thin films. Applied Physics Letters, 116(19).
2. Strader, P., Lee, Y., Teska, P., Li, X., & Jones, J. L. (2019). Approaches for characterizing surfaces damaged by disinfection in healthcare. Nano Life, 9(04), 1950002.
1. Nam, S., Lee, M., Kim, B. N., Lee, Y., & Kang, S. (2017). Morphology controlled Co-precipitation method for nano structured transparent MgAl2O4. Ceramics International, 43(17), 15352-15359.