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1) Nanoelectromechanical Switch and Memory for Harsh Environments (radiation & extreme temperatures)
1) Nanoelectromechanical Switch and Memory for Harsh Environments (radiation & extreme temperatures)
With the explosive growth of the Internet of Things (IoT), artificial intelligence (AI), and big data, the integration of these technologies is expanding into diverse sectors. While initially applied in emerging transportation solutions like autonomous vehicles and urban air mobility (UAM), their reach now extends to critical industries such as space exploration, nuclear energy, and avionics systems. These applications area demand electronic devices capable of maintaining exceptional stability under harsh environmental conditions. However, traditional CMOS devices face significant challenges in such environments, including increased leakage current, reduced refresh, and shifts in threshold voltage.
Nanoelectromechanical (NEM) switch and memory offer a promising alternative due to their mechanical operation mechanism, which provides robust resilience against high-energy radiation and extreme temperatures. Our research aims to leverage advanced semiconductor fabrication techniques to develop reliable NEM devices and explore their potential for widespread applications in space, nuclear, and avionics systems.
2) Highly reliable Microelectromechanical Switch, Circuit, and Components for Quantum Computer
2) Highly reliable Microelectromechanical Switch, Circuit, and Components for Quantum Computer
Quantum computers are generally composed of three primary components: qubits (the quantum substrate), a control processor, and a memory block. Qubits, the fundamental units of quantum information, are extremely sensitive to environmental noise and thus need to be placed at millikelvin temperatures. In current lab-scale quantum systems, a conventional computer at room temperature controls the qubits, with control signals transmitted through long cables. While this setup works for a small number of qubits, it becomes impractical when trying to scale up to millions of qubits due to the complexity and sheer volume of wiring required to connect the room-temperature electronics to the cryogenic qubits. Therefore, to enable large-scale quantum computers, it's crucial to develop electronics that can reliably operate at the cryogenic temperatures.
Microelectromechanical (MEM) switches can be designed to operate at extremely low temperatures through mechanical/material engineering. Furthermore, the MEM switch can exhibit low on-resistance and low signal distortion through metal-to-metal contact, making them strong candidates for integration into quantum computing systems. Our goal is to develop highly reliable MEM switches, circuit, and components that can be used in the cryogenic temperature, paving the way for their use in quantum computers.
3) Three-dimensional Monolithic Integration for Ultra-low Power Semiconductor Architecture
3) Three-dimensional Monolithic Integration for Ultra-low Power Semiconductor Architecture
With the rapid advancements in technology, the amount of data that needs to be processed is growing exponentially. Consequently, there is an increasing demand for advanced semiconductor systems capable of processing this data with ultra-low power consumption. Power gating technology has gained significant attention as a method for achieving ultra-low-power operation. This technique reduces power consumption by turning off the current to parts of the circuit that are not actively in use. To implement power gating effectively, a NEMS switch with a leakage current close to fA is ideal. Our goal is to monolithically integrate such a NEMS switch on top of conventional semiconductor circuits, enabling not only ultra-low power characteristics but also various additional functions.
4) Advanced Micro/Nano Structures for Next-Generation Electronic Systems
4) Advanced Micro/Nano Structures for Next-Generation Electronic Systems
Our group also focuses on developing advanced micro/nano structures using cutting-edge semiconductor processes. These semiconductor processes include photolithography, deposition, interconnect (electroplating), oxidation, and etching (both wet and dry). We aim to create innovative micro/nano structures that can be applied across a variety of fields such as displays, sensors, and packaging. By leveraging advanced semiconductor fabrication and MEMS technique, we strive to push the boundaries of the performance of the current devices and contribute to the development of next-generation electronic systems.
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