Oh, S.; Lee, H.; Na, J. A simple overexposed PMMA strategy for high-drain-current suspended 2D MoS₂ devices. ACS Appl. Electron. Mater. 2025.

Jung, M.; Kim, H. B.; Park, Y.; Park, J.; Lee, H.; Oh, S.; Suh, D. High-performance negative capacitance field-effect transistors with synthetic monolayer MoS2. ACS Nano 2025, 19 (18), 17503–17513.

Na, J.* Interfacial thermal resistance effect in self-aligned top-gate a-IGZO thin film transistors. Curr. Appl. Phys. 2024, 65, 91–95.

Chau, K.; Phan, T.; Park, N.; Na, J.*; Suh, D.*; Distinctive Photo‐Induced Memory Effect in Heterostructure of 2D Van Der Waals Materials and Lanthanum Aluminate. Adv. Opt. Mater. 2022. Early View, 2200124.

Lee, K.; Ji, H.; Kim, Y.; Kaczer, B.; Lee, H.; Ahn, J.-P.; Choi, J.; Grill, A.; Panarella, L.; Smets, Q.; Verreck, D.; Van Beek, S.; Chasin, A.; Linten, D.; Na, J.; Lee, J. W.; De Wolf, I.; Kim, G.-T., Deep Understanding of Electron Beam Effects on 2d Layered Semiconducting Devices under Bias Applications. Adv. Mater. Interfaces 2022, 9, 2102488.

Lee, K.; Nam, S.; Ji, H.; Choi, J.; Jin, J.-E.; Kim, Y.; Na, J.; Ryu, M.-Y.; Cho, Y.-H.; Lee, H.; Lee, J.; Joo, M.-K.; Kim, G.-T., Multiple Machine Learning Approach to Characterize Two-Dimensional Nanoelectronic Devices Via Featurization of Charge Fluctuation. npj 2D Materials and Applications 2021, 5, 4.

Lee, K.; Choi, J.; Kaczer, B.; Grill, A.; Lee, J. W.; Van Beek, S.; Bury, E.; Diaz-Fortuny, J.; Chasin, A.; Lee, J.; Chun, J.; Shin, D. H.; Na, J.; Cho, H.; Lee, S. W.; Kim, G.-T., Modeling and Understanding the Compact Performance of H-Bn Dual-Gated Res2 Transistor. Adv. Funct. Mater. 2021, 31, 2100625.

Lee, K.; Nam, S.; Ji, H.; Choi, J.; Jin, J.-E.; Kim, Y.; Na, J.; Ryu, M.-Y.; Cho, Y.-H.; Lee, H.; Lee, J.; Joo, M.-K.; Kim, G.-T., Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation. npj 2D Mater. Appl. 2021, 5 (1), 4.

Lee, G.; Na, J.*; Suh, D., Self-heating Characteristics of Mo Electrodes and MoS2 FET Using IR Thermal Imaging Microscope. J. Korean Phys. Soc. 2020, 76 (6), 502-505.

Na, J.; Kim, Y.; Smet, J. H.; Burghard, M.; Kern, K., Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus–SnSe2 Heterostructure. ACS Appl. Mater. Interfaces 2019, 11 (23), 20973-20978.

Kim, J.+; Na, J.+; Joo, M.-K.; Suh, D., Low-Voltage-Operated Highly Sensitive Graphene Hall Elements by Ionic Gating. ACS Appl. Mater. Interfaces 2019, 11 (4), 4226-4232.

Lee, B. C.; Na, J.; Choi, J. H.; Ji, H.; Kim, G.-T.; Joo, M.-K., Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide. Adv. Mater. 2018, 0 (0), 1805860.

Shin, J. M.; Choi, J. h.; Kim, D.-H.; Jang, H.-K.; Yun, J.; Na, J.; Kim, G.-T., Induction heating effect on the performance of flexible MoS2 field-effect transistors. Appl. Phys. Lett. 2017, 111 (15), 153105.

Na, J.; Park, K.; Kim, J. T.; Choi, W. K.; Song, Y.-W., Air-stable few-layer black phosphorus phototransistor for near-infrared detection. Nanotechnology 2017, 28 (8), 085201.

Ko, S.; Na, J.*; Moon, Y.-S.; Zschieschang, U.; Acharya, R.; Klauk, H.; Kim, G.-T.; Burghard, M.; Kern, K., Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping. ACS Appl. Mater. Interfaces 2017, 9 (49), 42912-42918.

Na, J.; Hoyer, A.; Schoop, L.; Weber, D.; Lotsch, B. V.; Burghard, M.; Kern, K., Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating. Nanoscale 2016, 8 (44), 18703-18709.

Jin, J. E.; Lee, J.-H.; Choi, J. H.; Jang, H.-K.; Na, J.; Whang, D.; Kim, D.-H.; Kim, G. T., Catalytic etching of monolayer graphene at low temperature via carbon oxidation. Phys. Chem. Chem. Phys. 2016, 18 (1), 101-109.

Seo, M.; Kim, H.; Kim, Y. H.; Na, J.; Lee, B. J.; Kim, J. J.; Lee, I.; Yun, H.; McAllister, K.; Kim, K. S.; Jeong, G. H.; Kim, G. T.; Lee, S. W., Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays. Appl. Phys. Lett. 2015, 107 (3), 033103.

Piao, M.; Joo, M.-K.; Na, J.; Kim, Y.-J.; Mouis, M.; Ghibaudo, G.; Roth, S.; Kim, W.-Y.; Jang, H.-K.; Kennedy, G. P.; Dettlaff-Weglikowska, U.; Kim, G.-T., Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks. J. Phys. Chem. C 2014, 118 (46), 26454-26461.

Na, J.; Shin, M.; Joo, M.-K.; Huh, J.; Kim, Y. J.; Choi, H. J.; Shim, J. H.; Kim, G.-T., Separation of interlayer resistance in multilayer MoS2 field-effect transistors. Appl. Phys. Lett. 2014, 104 (23), 233502-5.

Na, J.; Lee, Y. T.; Lim, J. A.; Hwang, D. K.; Kim, G.-T.; Choi, W. K.; Song, Y.-W., Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation. ACS Nano 2014, 8 (11), 11753-11762.

Kim, J.-S.; Joo, M.-K.; Piao, M. X.; Ahn, S.-E.; Choi, Y.-H.; Na, J.; Shin, M.; Han, M.-J.; Jang, H.-K.; Kim, G.-T., Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors. Thin Solid Films 2014, 558 (0), 279-282.

Choi, Y.-H.; Na, J.; Kim, J.-S.; Joo, M.-K.; Kim, G.; Kang, P., Nitrogen-plasma treatment of parallel-aligned SnO2-nanowire field-effect transistors. J. Korean Phys. Soc. 2014, 65 (4), 502-508.

Choi, Y.-H.; Jang, H.-K.; Jin, J.-E.; Joo, M.-K.; Piao, M.; Shin, J. M.; Kim, J.-S.; Na, J.; Kim, G. T., Inductively coupled plasma etching of hafnium–indium–zinc oxide using chlorine based gas mixtures. Jpn. J. Appl. Phys. 2014, 53 (4), 046503.

Choi, H. J.; Park, S. W.; Han, G. D.; Na, J.; Kim, G.-T.; Shim, J. H., Resistive switching characteristics of polycrystalline SrTiO3 films. Appl. Phys. Lett. 2014, 104 (24), 242105.

Piao, M.; Na, J.; Choi, J.; Kim, J.; Kennedy, G. P.; Kim, G.; Roth, S.; Dettlaff-Weglikowska, U., Increasing the thermoelectric power generated by composite films using chemically functionalized single-walled carbon nanotubes. Carbon 2013, 62 (0), 430-437.

Na, J.; Joo, M.-K.; Shin, M.; Huh, J.; Kim, J.-S.; Piao, M.; Jin, J. E.; Jang, H.-K.; Choi, H. J.; Shim, J. H.; Kim, G. T., Low-Frequency Noise in Multilayer MoS2 Field-Effect Transistors: The Effect of High-k Passivation. Nanoscale 2013, 6 (1), 433-441.

Kim, S.; Na, J.; Lee, S.-K.; Song, M.-J.; Kang, P.; Huh, J.; Lim, D.-S.; Kim, G.-T., Geometrical effects of nanowire electrodes for amperometric enzyme biosensors. Sensors and Actuators B: Chemical 2013, 183 (0), 222-229.

Kim, J.; Yoon, J.; Na, J.; Yee, S.; Kim, G. T.; Ha, J. S., Controlling the electronic properties of SWCNT FETs via modification of the substrate surface prior to atomic layer deposition of 10 nm thick Al2O3 film. Nanotechnology 2013, 24 (45), 455701.

Huh, J.; Na, J.; Ha, J. S.; Kim, S.; Kim, G. T., Asymmetric Contacts on a Single SnO2 Nanowire Device: An Investigation Using an Equivalent Circuit Model. ACS Appl. Mater. Interfaces 2011, 3 (8), 3097-3102.

Na, J.; Huh, J.; Park, S. C.; Kim, D.; Kim, D. W.; Lee, J. W.; Hwang, I.-S.; Lee, J.-H.; Ha, J. S.; Kim, G. T., Degradation pattern of SnO2 nanowire field effect transistors. Nanotechnology 2010, 21 (48), 485201.

Park, E. S.; Jang, D.; Lee, J.; Kim, Y. J.; Na, J.; Ji, H.; Choi, J. W.; Kim, G.-T., Maskless optical microscope lithography system. Rev. Sci. Instrum. 2009, 80 (12), 126101.

Kim, D.; Kim, Y.-K.; Park, S. C.; Ha, J. S.; Huh, J.; Na, J.; Kim, G.-T., Photoconductance of aligned SnO2 nanowire field effect transistors. Appl. Phys. Lett. 2009, 95 (4), 043107.