1.   Jeong-Gil Kim, “Optimization of Epitaxial Structures on GaN-on-Si(111) HEMTs with Step-Graded AlGaN Buffer Layer and AlGaN Back Barrier”, Coatings, Vol. 14 (2024)

2.   Jong Yul Park, Byoung-Gue Min, Jong-Min Lee, Woojin Chang, Dong Min Kang, E-San Jang, Junhyung Kim, Jeong-Gil Kim, “Optimized recess etching criteria for T-gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel”, Electronics Letters, Vol. 59 (2023)

3.   Jeong-Gil Kim, Jun-Hyeok Lee, Dong-Min Kang, Jung-Hee Lee, “Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer,” Micromachines, Vol. 16 (2023)

4.   Jeong-Gil Kim, Eunjin Kim, Dong-Seok Kim, Chuyoung Cho, Jung-Hee Lee, “Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs,” IEEE Journal of the Electron Devices Society, Vol. 10, pp.19-22 (2022)

5.  Dong-Hyeok Son, Terirama Thingujam, Quan Dai, Jeong-Gil Kim, Sorin Cristoloveanu, and Jung-Hee Lee, “Fabrication and characterization of GaN-based nanostructure field effect transistors”, Solid-State Electronics, Vol. 184, pp. 108079 (2021) 

6.   Jun-Hyeok Lee, Dong-Seok Kim, Jeong-Gil Kim, Woo-Hyun Ahn, Youngho Bae, and Jung-Hee Lee, “Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs”, Radiation Physics and Chemistry, Vol. 184, pp. 109473 (2021)

7.  Jeong-Gil Kim, Chuyoung Cho, Eunjin Kim, Jae Seok Hwang, Kyung-Ho Park and Jung-Hee Lee, “High Breakdown Voltage and Low Current Dispersion in AlGaN/GaN HEMTs with High Quality AlN Buffer Layer,” IEEE Transactions on Electron Devices, Vol. 68, pp.1513-1517 (2021) 

8.  Jun-Hyeok Lee, Jeong-Gil Kim, Hee-Sung Kang, and Jung-Hee Lee, “Suppression of current dispersion in AlGaN/GaN MISHFETs with in-situ AlN passivation layer”, Solid-State Electronics, Vol. 178, pp. 107984 (2021) 

9.   Yan Dong, Rui Wang, Zili Xie, Yanli Liu, Jianming Lei, Hui Guo, Quan Dai, Jeong-Gil Kim, Seung-Hyeon Kang, Chul-Ho Won, Jung-Hee Lee, Dunjun Chen, Rong Zhang, and Youdou Zheng, “Enhanced stability and sensitivity of AlGaN/GaN-HEMTs pH sensor by reference device”, IEEE Sensors Journal, Vol. 21, pp. 9771-9776 (2021)

10. Dong-Seok Kim, Jeong-Gil Kim, Jun-Hyeok Lee, Yong Seok Hwang, Young Jun Yoon, Jae Sang Lee, Youngho Bae and Jung-Hee Lee, “Mechanism of Proton-Induced electrical degradation of AlGaN/GaN high electron mobility transistors”, Solid-State Electronics, Vol. 175, pp. 107957 (2021)

11. Dong-Hyeok Son, Thingujam Terirama, Jeong-Gil Kim, Dae-Hyun Kim, In Man Kang, Ki-Sik Im, Christoforos Theodorou, Gerard Ghibaudo, Sorin Cristoloveanu, and Jung-Hee Lee, “Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation,” IEEE Transactions on electron devices, Vol. 67, pp.1547 – 1552 (2020)

12. Thingujam Terirama , Dong-Hyeok Son, Jeong-Gil Kim, Sorin Cristoloveanu and Jung-Hee Lee, “Effects of Interface Traps and Self-Heating on the Performance of GAA GaN Vertical Nanowire MOSFET,” IEEE Transactions on electron devices, Vol. 67, pp.816 – 821 (2020)

13. Jun-Hyeok Lee, Jeong-Gil Kim, Jeong-Min Ju, Woo-Hyun Ahn, Seung-Hyeon Kang, and Jung-Hee Lee, “AlInGaN/GaN double-channel FinFET with high on-current and negligible current collapse,” Solid-State Electronics, Vol. 154, pp.107687-1 – 107687-5 (2020)

14. Dong-Seok Kim, Jun-Hyeok Lee, Jeong-Gil Kim, Young Jun Yoon, Jae Sang Lee and Jung-Hee Lee, “Anomalous DC Characteristics of AlGaN/GaN HEMTs Depending on Proton Irradiation Energies,” ECS Journal of Solid State Science and Technology, Vol. 9, pp.065005-1 – 065005-4 (2020)

15. Quan Dai, Dong-Hyeok Son, Young-Jun Yoon, Jeong-Gil Kim, Xiaoshi Jin, In Man Kang, Dae-Hyun Kim, Yue Xu, Sorin Cristoloveanu, Jung-Hee Lee, “Deep sub-60 mV/decade subthreshold swing in AlGaN/GaN FinMISHFETs with M-plane sidewall channel,” IEEE Transactions on electron devices, Vol. 66, pp. 1699–1703 (2019)

16. Jeong-Gil Kim, Seung-Hyeon Kang, Lukasz Janicki, Jun-Hyeok Lee, Jeong-Min Ju, Kyung-Wan Kim, Yong-Soo Lee, Sang-Heung Lee, Jong-Won Lim, Ho-Sang Kwon, and Jung-Hee Lee, “Growth of AlGaN/GaN heterostructure with lattice-matched AlIn(Ga)N back barrier,” Solid-State Electronics, Vol. 23, pp. 1450017-1 – 1450017-13 (2019)

17. Jae Hwa Seo, Young-Jun Yoon, Dong-Hyeok Son, Jeong-Gil Kim, Jung-Hee Lee, Jong-Ho Lee, Ki-Sik Im, and In Man Kang, “A Novel Analysis of Lgd Dependent-1/f Noise in In0.08Al0.92N/GaN,” IEEE Electron device Letters, Vol. 50, pp.1749-1751 (2018)

18. Yan Dong, Dong-Hyeok Son, Quan Dai, Jun-Hyeok Lee, Chul-Ho Won, Jeong-Gil Kim, Dunjun Chen, Jung-Hee Lee, Hai Lu, Rong Zhang, and Youdou Zheng, “High sensitive pH sensor based on AlInN/GaN heterostructure transistor,” Sensors, Vol. 18, pp.1314-1-1314-11 (2018)

19. Yan Dong, Dong-Hyeok Son, Quan Dai, Jun-Hyeok Lee, Chul-Ho Won, Jeong-Gil Kim, Seung-Hyeon Kang, Jung-Hee Lee, Dunjun Chen, Hai Lu, Rong Zhang, and Youdou Zheng, “AlGaN/GaN heterostructure pH sensor with multi-sensing segments,” Sensors and Actuators, B, Vol. 260, pp. 134–139 (2018)

20. Jun-Hyeok Lee, Jeong-Min Ju, Gokhan Atmaca, Jeong-Gil Kim, Seung-Hyeon Kang, Yong Soo Lee, Sang-Heung Lee, Jong-Won Lim, Ho-Sang Kwon, Sefer Bora Lisesivdin, and Jung-Hee Lee, “High figure-of-merit (VBR2/RON) AlGaN/GaN power HEMT with periodically C-Doped GaN buffer and AlGaN back barrier,” IEEE Journal of the Electron Devices Society, Vol. 6, pp. 1179–1186 (2018)

21. Jeong-Gil Kim, Ki-Sik Im, Chul-Ho Won, Seung-Hyeon Kang, Sang-Heung Lee, Jong-Won Lim, Ji-Heon Kim, “Growth of 10 nm-thick AlIn(Ga)N/GaN heterostructure with high electron mobility and low sheet resistance” Physica Status Solidi (B) Basic Research, Vol. 254, pp. 1600731-1 – 1600731-5 (2017)

22. Ki-Sik Im, Jeong-Gil Kim, Sindhuri Vodapally, Caulmilone Raphael, Sorin Cristoloveanu and Jung-Hee Lee, “Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment,” Microelectronic Engineering, Vol. 178, pp. 217–220 (2017)

23. Min-Su Cho, Ra-Hee Kwon, Jae Hwa Seo, Young-Jun Yoon, Chul-Ho Won, Jeong-Gil Kim, Junsoo Lee, Seongjae Cho, Jung-Hee Lee, and In Man Kang, “Electrical performances of InN/GaN tunneling field-effect transistor,” Journal of Nanoscience and Nanotechnology, Vol. 17, pp. 73–81 (2017)

24. Jeong-Gil Kim, Chul-Ho Won, Do-Kywn Kim, Young-Woo Jo, Jun-Hyeok Lee, Yong-Tae Kim, Sorin Cristoloveanu and Jung-Hee Lee, “Growth of AlN/GaN HEMT structure using indium-surfactant,” Journal of Semiconductor Technology and Science, Vol. 15, pp. 490–496 (2015)