1. Jeong-Gil Kim, “Suppression of trapping effects in GaN-based HEMTs with high-quality AlN buffer layer”, 대한전기학회 추계학술대회 (Invited talk), (2024)
2. Chuyoung Cho, Jeong-Gil Kim, Yumin Koh, Dong-Hyun Kim, Jung-Hee Lee , “High Breakdown Voltage and Low Current Dispersion in AlGaN/GaN HEMT with High Quality AlN Buffer Layer ”, 12th International Workshop on Nitride Semiconductors (IWN), (2024)
3. Jeong hoon Choe, Dong han Kim, Byoung Tak Lee, Hae Chan Lee, Hyun Jung Lee, Chu-young Cho, Jung-Hee Lee, Jeong-Gil Kim, Hong Sik Park , “High DC and RF performance of AlGaN/GaN HEMT with AlN buffer layer ”, 12th International Workshop on Nitride Semiconductors (IWN), (2024)
4. Jeong-Gil Kim, “High Breakdown Voltage and Low Current Dispersion in AlGaN/GaN HEMT with High Quality AlN Buffer Layer ”, 8th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE, Invited talk), (2024)