Research

We focus on heterogeneous 3D integration technologies that enable the vertical stacking and seamless integration of diverse materials and device platforms, including III–V semiconductors, Si CMOS, and advanced packaging substrates. By combining device, circuit, and system-level design, our research aims to overcome the limitations of conventional planar scaling, achieving high performance, energy efficiency, and functional density for next-generation computing, RF, and power systems.

We develop cryogenic electronics for large-scale quantum computing and space applications by addressing the fundamental bottlenecks that emerge at ultra-low temperatures. Current limitations include incomplete understanding of carrier transport, disorder and trap-induced fluctuations, low-frequency noise, and device reliability under extreme cryogenic operation. By uncovering the underlying physics of these phenomena in Si CMOS and III–V devices, we establish the foundation for optimized cryogenic device and circuit technologies, ultimately enabling scalable quantum interfaces, energy-efficient cryo-control electronics, and ultra-low-noise systems for advanced computing and sensing applications.

Advancing wide-bandgap semiconductor devices (e.g., GaN and Ga₂O₃) and their heterogeneous 3D integration with CMOS to enable next-generation power delivery networks with unprecedented efficiency, power density, and scalability. We investigate device-level physics, reliability, and scaling challenges, while addressing critical bottlenecks including power conversion efficiency, heat dissipation, and interconnect parasitics. Our approach bridges materials, devices, circuits, and system-level integration to enable ultra-compact, high-efficiency power delivery networks for AI computing, hyperscale data centers, and future energy infrastructures.

We investigate high-speed and high-frequency RF devices based on compound semiconductors (e.g., GaN, InGaAs), focusing on carrier transport, parasitics, noise, and reliability at mm-wave and sub-THz frequencies. Building on this understanding, we develop RF circuits and co-integrate them with CMOS through heterogeneous 3D integration and advanced packaging. This approach enables high-performance, energy-efficient, and scalable systems for next-generation communications, high-performance computing, and data-centric applications.