Publications

[62] B. Kim, S. -H. Kuk, H. -S. Hwang, J. Jeong, Y. Park, Y. -J. Suh, J. -P. Kim, C. -J. Lee, B. -J. Cho, and S. -H. Kim*, "Effective Recovery Operation in FeFETs via Suppression of Hole Injection", IEEE Transactions on Electron Devices, accepted

[61] S. -Y. Yun+, J. -P. Kim+, J. Jeong, S. -W. Lee, Y. -S. Chung, S. - H. Kim*, Y. -K. Choi*, "Scalable Ising machine composed entirely of Si transistors", Science Advances, accepted

[60] B. Kim, S. -H. Kuk, H. -S. Hwang, J. Jeong, Y. Park, Y. -J. Suh, J. -P. Kim, C. -J. Lee, B. -J. Cho, and S. -H. Kim*, "Robust Disturb Immunity in AND-Type 1T FeFET Arrays by Electron Detrapping Mode", IEEE Transactions on Electron Devices, in press

[59] H. Jung, J. Choi, S. Baek, B. -G. Shin, Y. J. Song*, H. Jung, J. Kim, J. Jeon*, G. Kim, H. Park*, Y. Lee, J. Yoo*, J. -H. Lee, H. Kim, K. Kang*, J. Jeong, S. -H. Kim*, J. Bae, C. -S. Kim, W. -K. Yang, S. Lee, J. Kwon*, B. -S. Kim, J. -H. Han*, H. -J. kim, H. -H. Yoon*, J. Kwon*, Y. -J. Hong*, "Advances and Future Challenges in Monolithic 3D Integrated Logic, Power, and Optoelectronics Technologies for Tightly Interconnected Intelligent Systems", ACS Nano, in press

[58] J. Park, W. Baek, H. Kim, D. Jung, H. Kim, B. Kim, Y. -H. Cho, J. Lee, S. -W. Lim, S. -H. Lee, S. Ahn, S. -K. Kim, J. Jeong, J. -P. Kim, J. Lim, J. Shim, D. -M. Geum*, S. -H. Kim*, "A monolithic three-dimensional integrated red micro-LED display on silicon using AlInP/GaInP epilayers", Nature Electronics 9, p. 170 (2026)

[57] B. Kim, S. -K. Kim, S. -H. Kuk, J. Jeong, Y. Park, Y. -J. Suh, J. -P. Kim, C. -J. Lee, D. -M. Geum, B. -J. Cho, and S. -H. Kim*, "Recovery Operation in HfZrOx-Based FeFETs with Interfacial Layer Scavenging", IEEE Transactions on Electron Devices 73, p. 807 (2026)

[56] H. -R. Lim, S. K. Kim S. W. Lee, Y. Park, J. Jeong, H. Jeong, J. Lim, D. -M. Geum, J. Han, Y. Kim, J. Jeong, B. J. Cho, and S. H. Kim*, "Heterogeneous 3D Sequential CFET with Strain-Engineered Ge (100) Top-Channel pMOSFET on Bulk Si (100) nMOSFET", IEEE Transactions on Electron Devices, 72, p. 3422 (2025)

[55] J. Jeong+, C. -J. Lee+, Y. -J. Suh, N. Rheem, B. -H. Kim, J. -P. Kim, J. Park, and S. -H. Kim*, "Heterogeneous 3D Integrated RF Platform: III-V/III-N RF Blocks transfer onto CMOS via Die-to-Wafer Bonding Technology for High-Frequency and High-Density Wireless Communication Systems", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA, (2025) (+ equal contribution)  

[54] J. Jeong+, Y. Choi+, S. Kim, H. Kim, J. Kwon*, and S. -H. Kim*, " Monolithic 3D Integration of III-V HEMTs on Glass Using Ultra-Thin Dielectric Bonding Layer: A High-Frequency and Low-Loss Active Glass Platform for Sub-THz Applications", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA, (2025) (+ equal contribution)

[53] J. P. Kim+, S. -H. Kuk+, J. Jeong, H. J. Lee, J. Park, B. H. Kim, J. Kim, and S. Kim*, " A Compact and Energy-Efficient Monolithic-3D Oscillatory Ising Machine with Novel Ferroelectric Multi-Weight Coupling", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA, (2025) (†equal contribution)

[52] Y. Shin+, I. Kim+, M. Park+, J. Yoon, S. Baek, S. Eum, H. Yang, Y. Choi, J. Jeong, S. -H. Kim, H. Jung, S. Kim*, H. Park*, J. Kwon*, "Active BSCDN Benchmark Framework with Backside Complementary CNFET Logic Technology", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA, (2025) (+ equal contribution)

[51] J. Jeong, J. -T. Lim, Y. -J. Suh, N. Rheem, C. -J. Lee, B. H. Kim, J. P. Kim, J. Kim, J. Lee, C. -Y. Kim, and S. Kim*, "Fully Heterogeneous and Monolithic 3D integrated RF platform with III-V HEMTs on Si CMOS for Next-Generation Wireless Communication Systems", IEEE Symposium on VLSI Technology and Circuits (VLSI), Kyoto, Japan (2025)

[50] J. Jeong, C. -J. Lee, N. Rheem, Y. -J. Suh, B. H. Kim, J. P. Kim, and S. Kim*, "Heterogeneous 3D Integration of Low-Voltage E/D-mode GaN HEMTs on CMOS Chip for Efficient On-Chip Voltage Regulation in Active Power Delivery Networks", IEEE Symposium on VLSI Technology and Circuits (VLSI), Kyoto, Japan (2025)

[49] J. Park, H. Kim, Y. Kim, W. Baek, S. H. Lee, H. Kim, D. Geum, J. P. Kim, J. Jeong, and S. Kim*, "High-Performance Monolithic 3D Integrated Red uLEDoS Display for AR/VR", IEEE Symposium on VLSI Technology and Circuits (VLSI), Kyoto, Japan (2025)

[48] J. Jeong+, C. -J. Lee+, S. -J, Choi, N. Rheem, M. Song, Y. -J. Suh, B. -H. Kim, J. -P. Kim, J. Shim, J. Lee, M. Park, Y. Koh, D. -H. Kim, S. -H. Kim*, " 3D On-chip Integration of GaN Power Devices on Power Delivery Network (PDN) with Direct Heat Spreading Layer Bonding for Heterogeneous 3D (H3D) Stacked Systems", IEEE Transactions on Electron Devices, 72, p. 2654 (2025) (Special issue for the extended paper of International Electron Devices Meeting (IEDM) 2024, recognized as the top-ranked student paper in IEDM 2024) (+ equal contribution)

[47] I. Kim, J. Shim, J. Lim, J. Jeong, B. -H. Kim, S. -H. Kim*, " Highly Sensitive Free-Standing Waveguide-Integrated Bolometer on Germanium-on-Insulator Platform for Mid-Infrared on-Chip Spectroscopy", IEEE Transactions on Electron Devices, 72, p. 2654 (2025) (Special issue for the extended paper of International Electron Devices Meeting (IEDM) 2024, recognized as the top-ranked student paper in IEDM 2024)

[46] J. Jeong, Y. -J. Suh, N. Rheem, C. -J. Lee, S. K. Kim, B. H. Kim, J. P. Kim, J. Shim, M. Park, J. -T. Lim, M. Seong, J. Lee, K. Kim, D. -M. Geum, J. Kim, W. -S. Sul, W. -C. Lee, C. -Y. Kim, J. Lee, S. Kim*, "Heterogeneous and Monolithic 3D (HM3D) integration of III-V and CMOS for next-generation wireless communication", IEEE Electron Devices Technology and Manufacturing (EDTM), Hong Kong, China (2025) [Invited paper]

[45] S. Kim*, S. Kim, H. R. Lim, J. Jeong, Y. Park, J. Jeong, J. -P. Kim, B. -H. Kim, D. -M. Geum, Y. Kim, B. J. Cho, "Heterogeneous 3D CFET with hybrid channel configuration", IEEE Electron Devices Technology and Manufacturing (EDTM), Hong Kong, China (2025) [Invited paper] 

[44] H. Kim, J. Park, W. J. Beak, D. -M. Geum, I. Kim, H. -R. Lim, J. Lim, S. K. Kim, J. Jeong, J. Shim, J. H. Min, and S. H. Kim*, "Vertically stacked full-color micro-light-emitting diodes via oxide-based wafer-bonding technology”, Laser & Photonics Review 19, 2402116 (2025)

[43] J. Shim, J. Lim, I. Kim, J. Jeong, B. H. Kim, S. K. Kim, D. -M. Geum, and S. H. Kim*, "Room-temperature waveguide-integrated photodetector using bolometric effect for mid-infrared spectroscopy applications”, Light. Science and Applications, 14, p. 125 (2025)

[42] J. P. Kim, S. Kuk, H. W. Kim, J. Jeong, J. Park, B. H. Kim, J. Kim, A. Todri-Sanial, and S. H. Kim*, "Monolithic 3D Oscillatory Ising Machine using Reconfigurable FeFET Routing for large-scalability and low-power consumption”, Advanced Science, p. 2413247 (2025)

[41] D. Gwak, S. Ahn, J Lim, J. Jeong, B. W. Lee, Y. Kim, and S. -H. Kim*, " Quantum Efficiency Enhancement Using Photon-Trapping Structure on Extended SWIR Type-II Superlattice nBn Photodetector", Optics Express, 33, p. 13217 (2025)

[40] J. Jeong, J. Kim* and S. Kim*, "High-performance InGaAs HEMTs on GaAs substrate using AlAs/GaAs superlattice buffer-assisted heterostructure growth", Journal of Alloys and Compounds, 1019, p. 178699 (2025)

[39] J. Jeong, S. K. Kim, Y. -J. Suh, J. Lee, J. Choi, J. P. Kim, B. H. Kim, J. Park, J. Shim, N. Rheem, C. J. Lee, Y. Jo, D. -M. Geum, S. -Y. Park, J. Kim, and S. -H. Kim*, "Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms", Nature Communications, 15, p. 10809 (2024)

[38] J. Jeong, M. Park, Y. -J. Suh, J. -T. Lim, M. Seong, J. Lee, K. Kim, N. Rheem, C. -J. Lee, B. -H. Kim, S. -K. Kim, J. -P. Kim, J. Kim, W. -S. Sul, W. -C. Lee, C. -Y. Kim, J. Lee*, S. -H. Kim*, "Heterogeneous and Monolithic 3D (HM3D) Integrated RF Circuits: HM3D Integration of InGaAs HEMTs on CMOS-Based Backside Passive Devices", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2024)

[37] J. Jeong+, C. -J. Lee+, S. -J, Choi, N. Rheem, M. Song, Y. -J. Suh, B. -H. Kim, J. -P. Kim, J. Shim, J. Lee, M. Park, Y. Koh, D. -H. Kim, S. -H. Kim*, "Vertically Integrated Active Power Delivery Network (PDN) for Heterogenous 3D (H3D) Stacked Systems: 3D On-chip Integration of GaN Power Devices on PDN with Direct Heat Spreading Layer Bonding", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2024) (Top-ranked student papers in IEDM 2024) (+ equal contribution)

[36] I. Kim, J. Shim, J. Lim, J. Jeong, B. -H. Kim, S. -H. Kim*, "Highly-Sensitive Free-Standing Waveguide-Integrated Bolometer on Germanium-on-Insulator Platform for Mid-Infrared on-Chip Spectroscopy", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2024)

[35] D. -M. Geum, J. Lim, J. Jang, S. -Y. Ahn, S. -K. Kim, J. Shim, B. H. Kim, J. Park, W. J. Baek, J. Jeong, , and S. -H. Kim*, "Highly-efficient (>70%) and Wide-spectral (400 nm – 1700 nm) sub-micron-thick InGaAs photodiodes for future high resolution image sensors", Light. Science and Applications 13, p.311 (2024)

[34] M. Park+, M. Seong+, J. Jeong, S. Lee, J. Song, H. Ko, G. -W. Lee, W. -S. Sul, W. -C. Lee, S. Kim*, and J. Lee*, "Silicon-based Integrated Passive Device Stack for III-V/Si Monolithic 3D Circuits Operting on RF band", Solid-State Electronics, 45, p. 109012 (2024) (+ equal contribution)

[33] J. P. Kim, H. W. Kim, J. Jeong, J. Park, S. Kuk, J. Kim, J. Woo, and S. H. Kim*, "BEOL-compatible 4F2 Oscillator using Vertical InGaAs Biristor for Highly Scalable Monolithic 3D Ising Solver”, Small, p. 2406822 (2024)

[32] N. Rheem+, J. Jeong+, Y. -J. Suh, C. J. Lee, B. H. Kim, J. P. Kim, S. K. Kim, H. Lim, J. Kim, D. -H. Ahn, J. -H. Han, J. Lee, and S. Kim*, "First Heterogeneous and Monolithic (HM3D) Integration of InGaAs HEMTs and InP/InGaAs DHBTs on Si CMOS for Next-generation Wireless Communication", IEEE Symposium on VLSI Technology and Circuits (VLSI), Hawaii, US (2024) (+ equal contribution)

[31] S. K. Kim, H. -R. Kim, J. Jeong, Y. Park, J. Park, S. Park, J. Park, D. Ha, B. J. Cho, and S. Kim*, "Ge(110) GAA Nanosheet / Si(100) Tri-gate Nanosheet Monolithic CFETs Featuring Record-high Hole Mobility", IEEE Symposium on VLSI Technology and Circuits (VLSI), Hawaii, US (2024)

[30] J. Jeong, S. -K. Kim, Y. -J. Suh, J. Shim, W. J. Beak, S. J. Choi, J. P. Kim, B. H. Kim, D. -M. Geum, J. Kim, and S. -H. Kim*, "Thermal Studies of 3D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect using Buried Metal Insertion", IEEE Transactions on Electron Devices, 71, p. 4517 (2024)

[29] Y. -J. Suh, J. Jeong, B. H. Kim, S. -H. K, S. K. Kim, J. P. Kim, and S. H. Kim*, "Large Polarization of Hf0.5Zr0.5Ox Ferroelectric Film on InGaAs with Electric-Field Cycling and Annealing Temperature Engineering", IEEE Electron Device Letters, 45, p. 766 (2024)

[28] S. -H. Kuk, S. Choi, H. Y. Kim, K. Ko, J. Jeong, D. -M. Geum, J. -H. Han, D. -W. Jeon, and S. -H. Kim*, "Heavily-Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET", IEEE Transactions on Electron Devices, 71, p. 3429 (2024)

[27] J. Jeong, J. Kim, J. Lee, Y. -J. Suh, N. Rheem, S. -K. Kim, J. Park, B. H. Kim, J. P. Kim, S. -Y. Park, and S. -H. Kim*, "Influence of channel structure on the subthreshold swing of InGaAs HEMTs at cryogenic temperatures down to 4 K", IEEE Transactions on Electron Devices, 71, p. 3390 (2024) (Special issue for the extended paper of International Electron Devices Meeting (IEDM) 2023, recognized as the top-ranked student paper in IEDM 2023)

[26] S. K. Kim, H. -R. Lim, J. Jeong, S. W. Lee, H. J. Jeong, J. Park, J. P. Kim, J. Jeong, B. H. Kim, S. -Y. Ahn, Y. Park, D. -M. Geum, Y. Kim, Y. Beak, B. J. Cho, and S. H. Kim*, "Heterogeneous 3D Sequential CFETs with Ge (110) Nanosheet p-FET on Si (100) bulk n-FETs", IEEE Transactions on Electron Devices, 71, p. 393 (2024)

[25] J. Jeong, J. Kim, J. Lee, Y. -J. Suh, N. Rheem, S. -K. Kim, J. Park, B. H. Kim, J. P. Kim, S. -Y. Park, and S. H. Kim*, "Impact of the channel thickness fluctuation on the subthreshold swing of InGaAs HEMTs at cryogenic temperature down to 4 K for ultra-low power LNAs", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2023) (Top-ranked student papers in IEDM 2023)

[24] J. Jeong, S. J. Choi, J. Shim, E. Kim, S. K. Kim, B. H. Kim, J. P. Kim, Y. -J. Suh, W. J. Beak, D. -M. Geum, Y. Koh, D. Kim, and S. H. Kim*, "Thermal Management in Multi-Finger GaN-on-Si HEMTs: Understanding and Mitigating Self-Heating and Thermal Crosstalk for Enhanced Device Reliability", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2023)

[23] J. P. Kim+, H. W. Kim+, J. Jeong, J. Park, S. K. Kim J. Kim, J. Woo*, and S. H. Kim*, "BEOL-compatible 4F2 Single Crystalline Semiconductor Oscillator for Low-power and Large-scale Oscillatory Neural Network Hardware", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2023). (+ equal contribution)

[22] S. K. Kim, H. -R. Lim, J. Shim, W. Beak, S. Kim, Y. Park, J. Jeong, J. Lim, J. P. Kim, J. Jeong, B. H. Kim, D. -M. Geum, B. J. Cho, and S. Kim*, "Role of Inter-Layer Dielectric on the Electrical and Heat Dissipation Characteristics in the Heterogeneous 3D sequential CFETs with Ge pFETs on Si nFETs", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2023)

[21] B. H. Kim, S. K. Kim, S. -H. Kuk, Y. J. Seo, J. Jeong, J. P. Kim, D. -M. Geum, and S. Kim*, "IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETs", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2023)

[20] J. Shim, J. Lim, I. Kim, S. K. Kim, S. -Y. Ahn, J. Park, J. Jeong, B. H. Kim, S. Lee, J. An, D. -M. Geum, and S. Kim*, "Fully CMOS-Compatible Room-Temperature Waveguide-Integrated Bolometer Based on Germanium-on-Insulator Platform at Mid-Infrared Operating Beyond 4 μm", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2023)

[19] B. H. Kim, S. -H. K, S. K. Kim, J. P. Kim, Y. -J. Suh, J. Jeong, D. -M. Geum, Y. J. Yoon, and S. H. Kim*, "Low Operating Voltage and Immediate Read-After-Write of HZO-Based Si Ferroelectric Field-Effect Transistors with High Endurance and Retention Characteristics", Advanced Electronics Materials, p. 2300327 (2023)

[18] M. Park, J. Song, J. Jeong, J. -T. Lim, J. -H. Song, W. -C. Lee, G. Sim, H. Cho, D. Yoo, M. Kang, H. Ko, J. Lee, K. Yang, C. -Y. Kim, Y. Kim, W. -S. Sul, S. Kim, J. Lee, "200 mm Si CMOS Process-compatible Integrated Passive Device Stack for Millimeter-wave Monolithic 3-D Integration", IEEE Transactions on Electron Devices, 70, p. 5257 (2023)

[17] S. Kim, J. Jeong, S. -K. Kim, Y. -J. Suh, J. Lee, J. Choi, J. Park, J. P. Kim, B. H. Kim, Y. Jo, D. -M. Geum, S. -Y. Park, J. Kim, "Cryogenic InGaAs HEMTs for LNA and routing circuits in quantum computing", International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan (2023) [Invited paper]

[16] J. Jeong, S. -K. Kim, Y. -J. Suh, J. Lee, J. Choi, J. Park, J. P. Kim, B. H. Kim, Y. Jo, S. -Y. Park, J. Kim, and S. -H. Kim*, "Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing", IEEE Symposium on VLSI Technology and Circuits (VLSI), Kyoto, Japan (2023) (Highlight paper in VLSI 2023, Press research highlights in nature electronics)

[15] B. H. Kim, S. -H. Kuk, S. K. Kim, J. P. Kim, Y. -J. Suh, J. Jeong, D. -M. Geum, S. -H. Baek, and S. -H. Kim*, “Effect of Scandium Insertion into the Gate Stack of Ferroelectric Field-Effect Transistors", IEEE Transactions on Electron Devices 70, p. 1996 (2023)

[14] J. Jeong, S. K. Kim, J. Kim, D. -M. Geum, and S. Kim*, "Effects of Back Metal on the DC and RF Characteristics of 3D stacked InGaAs RF Devices for Monolithic 3D RF Applications", IEEE Electron Device Letters 44, p. 598 (2023)

[13] B. H. Kim, S. -H. Kuk, S. K. Kim, J. P. Kim, Y. -J. Suh, J. Jeong, D. -M. Geum, S. -H. Baek, and S. -H. Kim*, “Oxygen Scavenging in HfZrOx-based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement", Advanced Electronic Materials 9, p. 2201257 (2023)

[12] J. Jeong, S. -K. Kim, J. Kim, J. Lee, J. P. Kim, B. H. Kim, Y. -J. Suh, D. -M. Geum, S. -Y. Park, and S. -H. Kim*, "3D Stackable Cryogenic InGaAs HEMT-Based DC and RF Multiplexer/Demultiplexer for Large-Scale Quantum Computing", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2022)

[11] S. K. Kim, H. -R. Lim, J. Jeong, S. W. Lee, J. P. Kim, J. Jeong, B. H. Kim, S. -Y. Ahn, Y. Park, D. -M. Geum, Y. Kim, Y. Beak, B. J. Cho, and S. H. Kim*, "Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2022)

[10] J. Jeong+, D. -M. Geum+, and S. -H. Kim*, "Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs ", Electronics 11, p. 3013 (2022) (+ equal contribution) [Invited paper]

[9] J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, J. Lee, S. -Y. Park, and S. -H. Kim*, "3D stackable cryogenic InGaAs HEMTs for heterogeneous and monolithic 3D integrated highly scalable quantum computing systems", IEEE Symposium on VLSI Technology and Circuits (VLSI), Hawai, US (2022)

[8] D. -M. Geum, J. Lim, J. Jang, S. Ahn, S. K. Kim, J. Shim, B. -H. Kim, J. Park, W. J. Baek, J. Jeong, and S. -H. Kim*, "A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%)", IEEE Symposium on VLSI Technology and Circuits (VLSI), Hawaii, US (2022)

[7] J. Jeong, S. K. Kim, J. Kim, D. -M. Geum, D. Kim, E. Jo, H. Jeong, J. Park, J. -H. Jang, S. Choi, I. Kwon, and S. -H. Kim*, "Heterogeneous and monolithic 3D integration of III-V-based RF devices on Si CMOS circuits", ACS Nano, 16, p. 9031 (2022) (selected as a supplementary cover, press in Chemical & Engineering News and Forbes)

[6] J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, and S. -H. Kim*, "Heat management in monolithic 3D RF platform", IEEE Electron Devices Technology and Manufacturing (EDTM), Oita, Japan (2022)

[5] J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, and S. -H. Kim*, "Monolithic 3D integrated InGaAs HEMT on Si for Next-Generation Communication: Record fMAX and Relaxed Self-Heating of Top Devices by a Novel M3D Structure", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2021)

[4] J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, and S. -H. Kim*, "Monolithic 3D integrated InGaAs HEMT on Si for Next-Generation Communication: Record fMAX and Relaxed Self-Heating of Top Devices by a Novel M3D Structure", IEEE International Electron Device Meeting (IEDM), San Francisco, CA, USA (2021)

[3] J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, J. Park, J. -H. Jang, and S. -H. Kim*, "High-performance InGaAs-On-Insulator HEMTs on Si CMOS for Substrate Coupling Noise-free Monolithic 3D Mixed-Signal IC", IEEE Symposium on VLSI Technology and Circuits (VLSI), virtual, p. T10-4 (2021)

[2] J. Jeong, S. K. Kim, J. Kim, D. -M. Geum, J. Park, J. -H. Jang, and S. -H. Kim*, "Stackable InGaAs-On-Insulator HEMTs for Monolithic 3D Integration", IEEE Transactions on Electron Devices 68, p. 2205 (2021) (press in Semiconductor TODAY)

[1] D. -M. Geum, S. -K. Kim, H. -R. Lim, J. Park, J. Jeong, J. H. Han, W. J. Choi, H. -J. Kim, and S. -H. Kim*, "Electrical analysis for wafer-bonded interfaces of p+GaAs/n+InGaAs and p+InGaAs/n+InGaAs", IEEE Electron Device Letters 41, p. 800 (2021)