Publications

My Researchgate Profile

Journal Article

• • 1. I. K. M. R. Rahman, T. Kim, I. Kim, N. Higashitarumizu, S. Wang, S. Wang, H. M. Kim et al. "Thermally Stable Ruthenium Contact for Robust p-Type Tellurium Transistors." Nano Letters 25, no. 10 (2025): 3956-3963. [Link]

    2. K. Byeon, I. K. M. R. Rahman, I. Kim, H. Park, and Ali Javey. "Quantitative characterization of ZrO2 gate dielectric interface with tellurium." Applied Physics Letters 126, no. 23 (2025). [Link] 

    3. J. Geng, D. Zhang, I. Kim, H. M. Kim, N. Higashitarumizu, I. K. M. R. Rahman, L. L. et al. "Unusually strong near‐infrared photoluminescence of highly transparent bulk InSe flakes." Advanced Functional Materials 35, no. 3 (2025): 2413672. [Link]

    4. I. Kim, N. Higashitarumizu, I. K. M. R. Rahman, S. Wang, H. M. Kim, J. Geng, R. R. Prabhakar, J. W. Ager III, and A. Javey. "Low Contact Resistance WSe2 p-Type Transistors with Highly Stable, CMOS-Compatible Dopants." Nano Letters 24, no. 43 (2024): 13528-13533. [Link]

    5. N. Higashitarumizu, S. Z. Uddin, D. Weinberg, N. S. Azar, I. K. M. R. Rahman, V. Wang, K. B. Crozier, E. Rabani, and A. Javey, "Anomalous thickness dependence of photoluminescence quantum yield in black phosphorous," Nature Nanotechnology 18, no. 5 (2023): 507-513. [Link] [IF: 38.1]

    6. I. K. M. R. Rahman, S. Z. Uddin, M. Yeh, N. Higashitarumizu, J. Kim, Q. Li, H. Lee et al, "Gate Controlled Excitonic Emission in Quantum Dot Thin Films," Nano letters 23, no. 22 (2023): 10164-10170. [Link] [IF: 10.8]

    7. S. Z. Uddin, N. Higashitarumizu, H. Kim, I. K. M. R. Rahman, and A. Javey, "Efficiency roll-off free electroluminescence from monolayer WSe2," in Nano letters 22, no. 13 (2022): 5316-5321. [Link] [IF: 10.8]

    8. I. K. M. R. Rahman, S. Z. Uddin, H. Kim, N. Higashitarumizu, and A. Javey, "Low voltage AC electroluminescence in silicon MOS capacitors," in Applied Physics Letters, 121, no. 19 (2022). [Link] [IF: 3.5]

    9. I. K. M. R. Rahman, M. I. Khan and Q. D. M. Khosru, "A Rigorous Investigation of Electrostatic and Transport Phenomena of GaN Double-Channel HEMT," in IEEE Transactions on Electron Devices, vol. 66, no. 7, pp. 2923-2931, July 2019. [Link] [IF: 2.62]

    10. M. I. Khan, I. K. M. R. Rahman and Q. D. M. Khosru, "Surface Potential-Based Analytical Modeling of Electrostatic and Transport Phenomena of GaN Nanowire Junctionless MOSFET," in IEEE Transactions on Electron Devices, vol. 67, no. 9, pp. 3568-3576, Sept. 2020. [Link] [IF: 2.62]

    11. I. K. M. R. Rahman, M. I. Khan and Q. D. M. Khosru, "Analytical Drain Current and Performance Evaluation for Inversion Type InGaAs Gate-All-Around MOSFET," in AIP Advances, vol.11, issue 6, May 2021. [Link] [IF: 1.58]

    12. I. K. M. R. Rahman, M. I. Khan and Q. D. M. Khosru, "Electrostatic Characterization and Threshold Voltage Modeling of Inversion Type InGaAs Gate-All-Around MOSFET," in Journal of Computational Electronics, pp. 1-9, April 2021. [Link] [IF: 1.88]

Conference Proceeding(s)

• • 1. M. Jamal, I. K. M. R. Rahman, Ali Javey, and Mary C. Scott. "Structural Analysis of Growth-Controlled Tellurium using Scanning Electron Nanodiffraction." Microscopy and Microanalysis 31, no. Supplement_1 (2025): ozaf048-811.

    2. I. K. M. R. Rahman, M. I. Khan, M. Mahdia and Q. D. M. Khosru, "Analytical Modeling of Electrostatic Characteristics of Enhancement Mode GaN Double Channel HEMT," 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC), Portland, OR, 2018, pp. 1-4. [Link]

    3. M. I. Khan, I. K. M. Reaz Rahman and Q. D. M. Khosru, "Analytical Modeling of Capacitance-Voltage Characteristics of GaN Nanowire Junctionless MOSFET," 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO), Montreal, QC, Canada, 2020, pp. 67-72. [Link]