Journals

(*4 - first author papers and 9 - coauthor paper) 

[13] *Improved electrical contact to multilayer MoS2-based field-effect transistor by tunable tellurium substitutional doping via MOCVD 

G.H. Oh, J.W. Kim, J.M. Song, D.H. Seo, S. Park, H. Bae, and T.W. Kim. Materials Science in Semiconductor Processing 188, 109244 (2025) *I.F.=4.2 [Link]

[12] Analysis and Implication of Electrothermal Effects in Emerging 3D Transistors and Integration Topologies with Two-dimensional Semiconductors

L. Xu, A. Kumar, E. Quezada, J. Jiang, G.H. Oh, K. Agashiwala, J. Jiang, A. Pal, W. Cao, M. Lee and K. Banerjee. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2024, pp. 1-4. (2024) [Link]

[11] Compositionally Graded MoS2xTe2(1–x)/MoS2 van der Waals Heterostructures for Ultrathin Photovoltaic Applications

D.H. Seo, G.H. Oh, J.M. Song, J.W. Heo, S. Park, H. Bae, J.H. Park, and T.W. Kim. ACS Applied Materials & Interfaces 16, 47944-47951 (2024) *I.F.=8.3 [Link]

[10] Radiation damage of 2D materials: Strategies for operando X-ray photoelectron spectroscopy of 2D field-effect transistors

S.W. Choi, G.H. Oh, T.W. Kim, S.W. Hong, and A. Kim. Applied Surface Science 652, 159282 (2024) *I.F.=6.7 [Link]

[9] Synergistic Performance of MoS2/In0.53Ga0.47As Staggered Heterojunction for Broadband Optoelectronics

H.K Yang, G.H. Oh, T.J. Jeong, T.W. Kim, S. Kin, H.H. Kim, and J.C. Shin. Physica Status Solidi (b) 2300343 (2023) *I.F.=1.6 [Link]

[8] Atomically thin PdS2: physical characteristics and electronic device applications

H.S. Jo, G.H. Oh, S.I. Kim, and T.W. Kim. Journal of The Korean Physical Society 83, 751-755 (2023) *I.F.=0.66 [Link]

[7] Improved Performance of Transparent MoS2 Thin-Film Transistor with IZO Electrodes by Air Thermal Annealing

J.W. Kim, J.G. An, G.H. Oh, J.H. Park, and T.W. Kim. Electronic Materials Letters 20, 225-231 (2024) *I.F.=2.4 [Link]

[6] *Ultralow Subthreshold Swing 2D/2D Heterostructure Tunneling Field-Effect Transistor with Ion-Gel Gate Dielectrics

G. H. Oh, J.G. An, S.I. Kim, J.C. Shin, J.H. Park, and T.W. Kim. ACS Applied Electronic Materials 5, 1, 196-204 (2023) *I.F.=4.7 [Link]

[5] Top-gate field-effect transistor based on monolayer WS2 with an ion-gel gate dielectric

D.H. Jung, G.H. Oh, S.I. Kim, and T.W. Kim. Japanese Journal of Applied Physics 61, 034001 (2022) *I.F.=1.49 [Link]

[4] *High-performance Te-doped p-type MoS2 transistor with high-K insulators

G.H. Oh, S.I. Kim, and T.W. Kim. Journal of Alloys and Compounds 860, 157901 (2021) *I.F.=6.2 [Link]

[3] *Comparison of Ionic Liquid and Ion-Gel Top-Gate MoS2 Field-Effect Transistor

G.H. Oh, and T.W. Kim. Applied Science & Convergence Technology 30, 156-158 (2021) [Link]

[2] Optical and electrical properties of monolayer ReS2 developed via chemical vapor deposition on SiO2/Si substrate

J.S. Go, M.S. Kim, S.G. Kim, H.J. Jeon, S.H. Hong, J.M. Kim, G.H. Oh, Sagar M. Mane, and T.W. Kim. Journal of The Korean Physical Society 78, 1109-1115 (2021) *I.F.=0.66 [Link]

Poster

[10] Tunneling Field-effect Transistors based on MoS2/MoTe2 and MoS2/WSe2 Heterostructures with ion-gel dielectrics

G.H. Oh, J.G. An, J.C. Shin, J.H. Park, and T.W. Kim. 50 years Materials Research Society (MRS) spring meeting (2023)

[9] Steep Subthreshold Swing of 2D/2D Tunneling Field-effect Transistor using Ion-Gel Dielectric

G.H. Oh, J.G. An, S.I. Kim, J.C. Shin, J.H. Park, and T.W. Kim. The 30th Korean Conference of Semiconductor (KCS) (2023)

[8] P-MoS2(1-x)Te2x/n-In0.53Ga0.47As Heterostructure for Low Schottky Barrier High Performance Photodetector

H.G. Yang, T.W. Kim, S.D. Oh, G.H. Oh, H.S. Jo, and J.C. Shin. The 30th Korean Conference of Semiconductor (KCS) (2023)

[7] Ion-Gel Gating of InAs Nanowire Field-Effect Transistor

M.G. Kang, J.H. Lee, G.H. Oh, and J.C. Shin. The 30th Korean Conference of Semiconductor (KCS) (2023)

[6] Strategy to Differentiate Oxidized Channel of MoTe2 Field-effect-transistor Using Operando-scanning Photoelectron Microscopy

S.W. Choi, G.H. Oh, S.W. Hong, T.W. Kim, and A.S. Kim. The 20th International Symposium on the Physics of Semiconductors and Applications (ISPSA) (2022)

(Excellent Poster Presentation Award)

[5] MoS2xTe2(1-x) Ternary Alloys Top Gate FET Using Ion-Gel

G.H. Oh, A.S. Kim, C.H. Shin, J.C. Shin, and T.W. Kim. The 6th International Conference on Advanced Electromaterials (ICAE) (2021) 

[4] Tellurium doping in two-dimensional MoS2 for PMOS Field-effect Transistor with High Performances

G.H. Oh, and T.W. Kim. International Union of Materials Research Societies – International Conference in Asia (IUMRS-ICA) (2021)

[3] Quantitative Schottky Barrier Height Analysis of metal contact to few-layer 2H-MoTe2

G.H. Oh, and T.W. Kim. The 61th The Korean Vacuum Society (2021)

[2] High-performance Te-doped MoS2 transistor on high-K dielectrics

G.H. Oh, and T.W. Kim. The 60th The Korean Vacuum Society (2021) (Best Poster Presentation Award)

[4] MoS2/MoTe2 and MoS2/WSe2 Tunneling Field-effect transistors using ion-gel dielectrics

G.H. Oh, J.G. An, S.I. Kim, J.C. Shin, J.H. Park, and T.W. Kim. The 2023 Spring meeting of The Korean Physical Society (2023)

[3] Tunneling Field-effect Transistors with 2D/2D Heterostructure for Low Subthreshold Swing

G.H. Oh, and T.W. Kim. The 2022 Fall Conference of The Korean Ceramic Society (2022)

[2] Band-to-Band Tunneling Field-Effect Transistor based on MoS2/MoTe2 Heterostructure using Ion-Gel Gate

G.H. Oh, and T.W. Kim. The 62th The Korean Vacuum Society (2022)