Geunhyung Oh

Ph.D. Student

Electrical and Computer Engineering

University of California, Santa Barbara

updated by 24.09.11

I am interested in advanced materials and nano-electronic devices. I would like to expand my research scope in materials and devices.

Now, I'm focusing on heterostructures and 3D integration of 2D TMDs

RESEARCH INTERESTS

Electronic and opto-electronic devices based on nanomaterials

- high performance; low-power consumption; energy efficient; metal contact; photoresponsivity

Van der Waals growth by Metal-Organic Chemical Vapor Deposition (MOCVD) and CVD

- wafer-scale; atomic-layer control; doping strategy; ternary alloys

PUBLICATIONS

Guenhyung Oh - Publications

[12] Improved Electrical Contact to multilayer MoS2-based Field-effect Transistor by Tunable Tellurium Substitutional Doping via MOCVD

G.H. Oh, J.W. Kim, J.M. Song, S. Park, H. Bae, and T.W. Kim. (Submitted)

3 - first author papers

[11] Ultralow Subthreshold Swing 2D/2D Heterostructure Tunneling Field-Effect Transistor with Ion-Gel Gate Dielectrics

G. H. Oh, J.G. An, S.I. Kim, J.C. Shin, J.H. Park, and T.W. Kim.

ACS Applied Electronic Materials 5, 1, 196-204 (2023) *I.F.=4.7 [Link]

[10] High-performance Te-doped p-type MoS2 transistor with high-K insulators

G.H. Oh, S.I. Kim, and T.W. Kim.

Journal of Alloys and Compounds 860, 157901 (2021) *I.F.=6.2 [Link]

[9] Comparison of Ionic Liquid and Ion-Gel Top-Gate MoS2 Field-Effect Transistor

G.H. Oh, and T.W. Kim.

Applied Science & Convergence Technology 30, 156-158 (2021) [Link]

8 - coauthor paper

[8] Compositionally Graded MoS2xTe2(1–x)/MoS2 van der Waals Heterostructures for Ultrathin Photovoltaic Applications

D.H. Seo, G.H. Oh, J.M. Song, J.W. Heo, S. Park, H. Bae, J.H. Park, and T.W. Kim. ACS Applied Materials & Interfaces 16, 47944-47951 (2024) *I.F.=10.38 [Link]

[7] Radiation damage of 2D materials: Strategies for operando X-ray photoelectron spectroscopy of 2D field-effect transistors

S.W. Choi, G.H. Oh, T.W. Kim, S.W. Hong, and A. Kim. Applied Surface Science 652, 159282 (2024) *I.F.=6.7 [Link]

[6] Synergistic Performance of MoS2/In0.53Ga0.47As Staggered Heterojunction for Broadband Optoelectronics

H.K Yang, G.H. Oh, T.J. Jeong, T.W. Kim, S. Kin, H.H. Kim, and J.C. Shin. Physica Status Solidi (b) 2300343 (2023) *I.F.=1.6 [Link]

[5] Atomically thin PdS2: physical characteristics and electronic device applications

H.S. Jo, G.H. Oh, S.I. Kim, and T.W. Kim.

Journal of The Korean Physical Society 83, 751-755 (2023) *I.F.=0.66 [Link]

[4] Improved Performance of Transparent MoS2 Thin-Film Transistor with IZO Electrodes by Air Thermal Annealing

J.W. Kim, J.G. An, G.H. Oh, J.H. Park, and T.W. Kim.

Electronic Materials Letters 20, 225-231 (2024) *I.F.=2.4 [Link]

[3] Top-gate field-effect transistor based on monolayer WS2 with an ion-gel gate dielectric

D.H. Jung, G.H. Oh, S.I. Kim, and T.W. Kim.

Japanese Journal of Applied Physics 61, 034001 (2022) *I.F.=1.49 [Link]

[2] Optical and electrical properties of monolayer ReS2 developed via chemical vapor deposition on SiO2/Si substrate

J.S. Go, M.S. Kim, S.G. Kim, H.J. Jeon, S.H. Hong, J.M. Kim, G.H. Oh, Sagar M. Mane, and T.W. Kim.

Journal of The Korean Physical Society 78, 1109-1115 (2021) *I.F.=0.66 [Link]

[1] Atomic Layer MoS2xTe2(1-x) Ternary Alloys: Two-Dimensional van der Waals Growth, Band gap Engineering, and Electrical Transport

D.H. Kim, G.H. Oh, A. Kim, C.H. Shin, J.H. Park, S.I. Kim, and T.W. Kim.

ACS Applied Materials & Interfaces 12, 40518-40524 (2020) *I.F.=10.38 [Link]