Geunhyung Oh

Ph.D. Student

Electrical and Computer Engineering

University of California, Santa Barbara

updated by 01/03/25

I am interested in advanced materials and nano-electronic devices. I would like to expand my research scope in materials and devices.

Now, I'm focusing on heterostructures and 3D integration of 2D TMDs

RESEARCH INTERESTS

Electronic and opto-electronic devices based on nanomaterials

- high performance; low-power consumption; energy efficient; metal contact; photoresponsivity

Van der Waals growth by Metal-Organic Chemical Vapor Deposition (MOCVD) and CVD

- wafer-scale; atomic-layer control; doping strategy; ternary alloys

PUBLICATIONS

Guenhyung Oh - Publications

4 - first author papers

[13] Improved electrical contact to multilayer MoS2-based field-effect transistor by tunable tellurium substitutional doping via MOCVD

G.H. Oh, J.W. Kim, J.M. Song, D.H. Seo, S. Park, H. Bae, and T.W. Kim.

Materials Science in Semiconductor Processing 188, 109244 (2025) *I.F.=4.2 [Link]

[11] Ultralow Subthreshold Swing 2D/2D Heterostructure Tunneling Field-Effect Transistor with Ion-Gel Gate Dielectrics

G. H. Oh, J.G. An, S.I. Kim, J.C. Shin, J.H. Park, and T.W. Kim.

ACS Applied Electronic Materials 5, 1, 196-204 (2023) *I.F.=4.7 [Link]

[10] High-performance Te-doped p-type MoS2 transistor with high-K insulators

G.H. Oh, S.I. Kim, and T.W. Kim.

Journal of Alloys and Compounds 860, 157901 (2021) *I.F.=6.2 [Link]

[9] Comparison of Ionic Liquid and Ion-Gel Top-Gate MoS2 Field-Effect Transistor

G.H. Oh, and T.W. Kim.

Applied Science & Convergence Technology 30, 156-158 (2021) [Link]

9 - coauthor paper

[12] Analysis and Implication of Electrothermal Effects in Emerging 3D Transistors and Integration Topologies with Two-dimensional Semiconductors

L. Xu, A. Kumar, E. Quezada, J. Jiang, G.H. Oh, K. Agashiwala, J. Jiang, A. Pal, W. Cao, M. Lee and K. Banerjee. IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, December 7-11, pp. 32.2.1-32.2.4. (2024)

[8] Compositionally Graded MoS2xTe2(1–x)/MoS2 van der Waals Heterostructures for Ultrathin Photovoltaic Applications

D.H. Seo, G.H. Oh, J.M. Song, J.W. Heo, S. Park, H. Bae, J.H. Park, and T.W. Kim. ACS Applied Materials & Interfaces 16, 47944-47951 (2024) *I.F.=10.38 [Link]

[7] Radiation damage of 2D materials: Strategies for operando X-ray photoelectron spectroscopy of 2D field-effect transistors

S.W. Choi, G.H. Oh, T.W. Kim, S.W. Hong, and A. Kim. Applied Surface Science 652, 159282 (2024) *I.F.=6.7 [Link]

[6] Synergistic Performance of MoS2/In0.53Ga0.47As Staggered Heterojunction for Broadband Optoelectronics

H.K Yang, G.H. Oh, T.J. Jeong, T.W. Kim, S. Kin, H.H. Kim, and J.C. Shin. Physica Status Solidi (b) 2300343 (2023) *I.F.=1.6 [Link]

[5] Atomically thin PdS2: physical characteristics and electronic device applications

H.S. Jo, G.H. Oh, S.I. Kim, and T.W. Kim.

Journal of The Korean Physical Society 83, 751-755 (2023) *I.F.=0.66 [Link]

[4] Improved Performance of Transparent MoS2 Thin-Film Transistor with IZO Electrodes by Air Thermal Annealing

J.W. Kim, J.G. An, G.H. Oh, J.H. Park, and T.W. Kim.

Electronic Materials Letters 20, 225-231 (2024) *I.F.=2.4 [Link]

[3] Top-gate field-effect transistor based on monolayer WS2 with an ion-gel gate dielectric

D.H. Jung, G.H. Oh, S.I. Kim, and T.W. Kim.

Japanese Journal of Applied Physics 61, 034001 (2022) *I.F.=1.49 [Link]

[2] Optical and electrical properties of monolayer ReS2 developed via chemical vapor deposition on SiO2/Si substrate

J.S. Go, M.S. Kim, S.G. Kim, H.J. Jeon, S.H. Hong, J.M. Kim, G.H. Oh, Sagar M. Mane, and T.W. Kim.

Journal of The Korean Physical Society 78, 1109-1115 (2021) *I.F.=0.66 [Link]

[1] Atomic Layer MoS2xTe2(1-x) Ternary Alloys: Two-Dimensional van der Waals Growth, Band gap Engineering, and Electrical Transport

D.H. Kim, G.H. Oh, A. Kim, C.H. Shin, J.H. Park, S.I. Kim, and T.W. Kim.

ACS Applied Materials & Interfaces 12, 40518-40524 (2020) *I.F.=10.38 [Link]