Patents

14. Title: SOT 타입 자기 저항 메모리 및 그 제조 방법

Inventor: 최경민, 팜 응옥 루 리, 고경훈

Patent No: KR 10-2477478 (Korea)

13. Title: 자기메모리 소자

Inventor: 최경민

Patent No: KR 10-2673946 (Korea)

12. Title: Magnetic Random Access Memory

Inventor: Gyung-Min Choi and Byoung-Chul Min

Patent No: US 10,529,774 B1 (Unites States)

11. Title: 마그네틱램

Inventor: 최경민, 민병철

Patent No: KR 10-2053007 (Korea)

10. Title: Magnetic tunnel junction device and method for manufacturing the same

Inventor: Gyung-Min Choi, Byoung-Chul Min, Kyung Ho Shin

Patent No: EP 2 287 863 B1 (European Union)

9. Title: PERPENDICULARLY MAGNETIZED THIN FILM STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Inventor: Gyung-Min Choi, Byoung-Chul Min, Kyung Ho Shin

Patent No: US 9,355,669 B2 (United States)

8. Title: METHOD FOR MANUFACTURING A MAGNETIC TUNNEL JUNCTION DEVICE

Inventor: Gyung-Min Choi, Byoung-Chul Min, Kyung Ho Shin

Patent No: US 9,263,668 B2 (United States)

7. Title: Magnetic tunnel junction device and method for manufacturing the same

Inventor: Gyung-Min Choi, Byoung-Chul Min, Kyung Ho Shin

Patent No: US 8,841,006 B2 (United States)

6. Title: Magnetic tunnel junction device and method for manufacturing the same

Inventor: Gyung-Min Choi, Byoung-Chul Min, Kyung Ho Shin

Patent No: JP 5373733 (Japan)

5. Title: 수직자화 박막 구조체 및 그 제조 방법

Inventor: 최경민, 민병철, 신경호

Patent No: KR 10-1308105 (Korea)

4. Title: Magnetic tunnel junction device and method for manufacturing the same

Inventor: Gyung-Min Choi, Byoung-Chul Min, Kyung Ho Shin

Patent No: JP 5300701 (Japan)

3. Title: Magnetic tunnel junction structure with perpendicular magnetization layers

Inventor: Byoung-Chul Min, Gyung-Min Choi, Kyung Ho Shin

Patent No: US 8,319,297 B2 (United States)

2. Title: 자기터널접합 디바이스 및 그 제조 방법

Inventor: 최경민, 민병철, 신경호

Patent No: KR 10-1115039 (Korea)

1. Title: 수직자화층을 갖는 자기터널접합구조

Inventor: 민병철, 최경민, 신경호

Patent No: KR 10-1096517 (Korea)