PUBLICATION

2025

 57.   S. Kim, Y. Lee, S. Shin, H. Kim, H. Shin, H. Hosono, C. Jeong*,  J. Kim*

        "Mobility Overestimation in Thin-Film Transistors: Effects of Device Geometry and Fringe Currents "

        ACS Nano (2025) Accepted  (IF: 16) 

 56.   S. Moon, J. Kim, J. Kim, B. Bae*

        " Photo response of a-IGZO thin films as a function of annealing temperature "

        Journal of Information Display (2025)     

 55.   H. Cho, M. Tsuji*, S. Ueda. J. Kim, H. Hosono*

        " Oxygen Defects and Instability in Very Thin a-IGZO TFTs "

         Adv. Electron. Mater., 11 (2025) e00349     

2024

54.   P. Chung, J. Ryu, D. Seo, D. Sahu, M. Song, J. Kim, T. Yoo*    

        " Self‐Selective Crossbar Synapse Array with n‐ZnO/p‐NiOx/n‐ZnO Structure for Neuromorphic Computing "

           Adv. Electron. Mater., 11 (2025) 2400347  

53.   Y. Shi, M. Tsuji, H. Cho, S. Ueda, J. Kim*, H. Hosono* 

           "Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway"

          ACS Nano , 134 (2024)  (IF: 17.1) 

52.  S. Choi, J. Sim, J. Shin, S. Ryu, T. Hwang, S. Lim, H. Oh, J. Kwag, J. Lee, K. Song, Y. Lee, M. Song, J. Kim, C. Park, Y. Song*, J. Park* 

      "Unveiling the Hybrid-Channel (poly-Si/IGO) Structure for 3D NAND Flash Memory for Improving the Cell Current and GIDL-Assisted Erase Operation"

       Small Struct. (2024) 2400495

2023

51.   S. Urata*, N. Nakamura, J. Kim, H. Hosono

           "Role of hydrogen-doping for compensating oxygen-defect in non-stoichiometric amorphous In2O3-x: modeling with a machine-learning potential"

           Journal of Applied Physics , 134 (2023) 115105 (IF: 2.286)        

50.   Y. Kim, H. Oh, J. Kim,  J. Lim*,  J. Park*

           "Approaches for 3D Integration Using Plasma-Enhanced Atomic-Layer-Deposited Atomically-Ordered InGaZnO Transistors with Ultra-High Mobility"

         Small Methods, (2023) 2300549. (IF: 15.367)

49.    D. Kim, H, Choi, Y. Kim, D. Lee, H. Oh, J. Lee, J. Kim, S. Lee, B. Kuh, T. Kim, H. Kim*, J. Park*

        “Selectively Nitrogen Doped ALD-IGZO TFTs with Extremely High Mobility and Reliability "

ACS Applied Materials & Interfaces,  15 (2023) 31652–31663 . (IF: 10.383)

48.     M. Tsuji, M. Sasase, S. Iimura, J. Kim­*, H. Hosono*

        “Room-Temperature Solid-State Synthesis of Cs3Cu2I5 Thin Films and Formation Mechanism for Its Unique Local Structure"

Journal of the America Chemical Society,  145 (2023) 11650-11658. (IF: 16.383)

47.    H. Sugiyama, N. Nakamura, S. Watanabe, J. Kim, M. Kitano*, H. Hosono*,

“Electronic Promotion of Methanol Synthesis over Cu-Loaded ZnO-based Catalysts”

The Journal of Physcal Chemistry Letters, 14 (2023) 1259-1264. (IF: 6.475)

46.     T. Yamasaki, S. Iimura*, K. Sim, J. Kim, H. Hosono*,

“Extremely Shallow Valence Band in Lanthanum Trihydride”

Journal of the America Chemical Society, 145 (2023) 560-566. (IF: 16.383)

2022

45.     Y. Shi, Siah, K. Sim, J. Kim*, H. Hosono*,

“High-Performance a-ITZO TFTs with High Bias Stability Enabled by Self-Aligned Passivation using a-GaOx”

Applied Physics Letters, 121 (2022) 212101. (IF: 3.816)

44.     K. Ide, N. Watanabe, T. Katase, M. Sasase, J. Kim, S. Ueda, K. Horiba, H. Kumigashira, H. Hiramatsu, H. Hosono, T. Kamiya

“Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes”

Applied Physics Letters, 121 (2022) 192108. (IF: 3.816)

43.    K. Sim, T. Nakao, M. Sasase, S. Iimura, J. Kim*, H. Hosono*,

“18-crown-6 Additive to Enhance Performance and Durability in Solution-Processed Halide Perovskite Electronics”

Small, 18 (2022) 2202298. (IF: 15.153)

42.     M. Tsuji, S. Iimura*, J. Kim, H. Hosono*

“Hole concentration reduction in CuI by Zn substitution and its mechanism: toward device applications”

ACS Applied Materials & Interfaces, 14 (2022) 33463. (IF: 10.383)

41.     T. Yamasaki, R. Takaoka, S. Iimura*, J. Kim, H. Hiramatsu, H. Hosono

“Characteristic Resistive Switching of Rare-earth Oxyhydrides by H- Insertion and Extraction”

ACS Applied Materials & Interfaces, 14 (2022) 19766. (IF: 10.383)

40.      J. Kim*,#, Y. Shiah#, K. Sim, S. Iimura, K. Abe, M. Tsuji, M. Sasase, H. Hosono*

“High-Performance P-channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D-3D Core–shell structure”

Advanced Science, 9 (2022) 2104993 (IF: 17.521)

2021

39.     Y. Shiah, K. Sim, Y. Shi, K. Abe, S. Ueda, M. Sasase, J. Kim*, H. Hosono*

“Mobility-Stability Trade-off in Oxide TFTs”

Nature Electronics, 8 (2021) 800-807. (IF: 33.686)

38.    Y. Shiah, K. Sim, S. Ueda, M. Sasase, J. Kim*, H. Hosono*

“Unintended Carbon-related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs”

IEEE Electron Device Letter, 42 (2021) 1319-1322. (IF: 4.816)

37.    C. Choi, T. Kim, S. Ueda, Y. Shiah, H. Hosono, J. Kim*, J. Jeong*

“High-Performance IGTO Transistors with an Al2O3 Gate Insulator Deposited by ALD at the Low Temperature of 150 °C: Role of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film”

ACS Applied Materials & Interfaces, 13 (2021) 28451-28461. (IF: 10.383)

36.    H. Kim, S. Choi, H. Jeong, J. Lee, J. Kim*, J. Park*

“Highly Dense and Stable p-type TFT Based on ALD-SnO Fabricated by Two-Step Crystallization”

ACS Applied Materials & Interfaces, 13 (2021) 30818-30825. (IF: 10.383)

35.    A. Liu, H. Zhu, M. Kim, J. Kim, Y. Noh*

“Engineering Copper Iodide (CuI) for Multifunctional p-TypeTransparent Semiconductors and Conductors”

Advanced Science, 8 (2021) 2100546. (IF: 17.521)

34.    X. Liu, J. Zhang, Y. Shiah, J. Kim*, H. Ning*, K. Lu, X. Cao, W. Xu, R. Yao*, J. Peng.

“Implementing room-temperature fabrication of flexible amorphous Sn-Si-O TFTs via defect controls”

Advanced Materials Interfaces, 8 (2021) 2002193 (IF: 6.389)

33.    A. Saitoh* et al.

“Origins of the coloration from structure and valence state of bismuth oxide glasses”

Journal of Non-Crystalline Solids, 560 (2021) 120720. (IF: 4.458)

2020

32.    H. Mizoguchi*, S Park, T. Katase, G. Bazhenin, J. Kim, H. Hosono*

“Origin of metallic nature of Na3N anti-perovskite”

Journal of the American Chemical Society, 143 (2021) 69–72. (IF: 16.383)

31.    N. On, B. Kim, Y. Kim, E. Kim, J. Lim, H. Hosono, J. Kim*, H. Yang*, J. Jeong*

“Boosting Carrier Mobility and Stability in Indium-Zinc-Tin Oxide Thin-Film Transistors through Controlled Crystallization”

Scientific Report, 10 (2020) 18868. (IF: 4.996)

30.    J. Li, T. Inoshita,, T. Ying, A. Ooishi, J. Kim*, H. Hosono*

“A Highly Efficient and Stable Blue-Emitting Cs5Cu3Cl6I2 with a One-Dimensional Chain Structure”

Advanced Materials, 32 (2020) 2002945. (IF: 32.086)

29.    S. Park, K. Lee, J. Lee, G. Bang, J. Kim, H. Park, M. Oh, S. Lee, Y. Kim, Y. Kim, H. Hosono, J. Bang*, K. Lee*

“Improved polaronic transport under a strong Mott-Hubbard interaction in Cu-substituted NiO”

Inorganic Chemistry Frontiers, 7 (2020) 853-858 (IF:7.779)

2019

28.    T. Jun, T. Handa, K. Sim, S. Iimura, M. Sasase, J. Kim*, Y. Kanemitsu, H. Hosono*

“One-Step Solution Synthesis of White-Light-Emitting Films via Dimensionality Control of the Cs–Cu–I System”

APL Materials, 7 (2019) 111113. (IF:6.635)

27.    J.Sheng, T.Hong, H.Lee, K.Kim, M.Sasase, J.Kim*, H.Hosono, J. Park*

 “Amorphous IGZO TFT with High Mobility of ~70 cm2/Vs via Vertical Dimension Control using PEALD”

ACS Applied Materials & Interfaces, 11 (2019) 40300-40309. (IF: 10.383)

26.    K. Sim, T, Jun, J. Bang, H. Kamioka, J. Kim*, H. Hiramatsu, H. Hosono*

“Performance Boosting Strategy for Perovskite Light-Emitting Diodes”

Applied Physics Reviews, 6 (2019) 031402. (IF:19.527)

25.   K. Ide*, Y. Futakado, N. Watanabe, J. Kim, T. Katase, H. Hiramatsu, H. Hosono, T. Kamiya

“Transition metal-doped amorphous oxide semiconductor thin-film phosphor, chromium-doped amorphous gallium oxide“

Phys. status solidi A, 216 (2019) 1800198. (IF: 2.821)

24.    N. Watanabe, K. Ide, J. Kim, T. Katase, H. Hiramatsu, H. Hosono, T. Kamiya*

“Multiple Color Inorganic Thin-Film Phosphor, RE Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature“

Phys. status solidi A, 216 (2019) 1700833. (IF: 2.821)

23.    J. Kim*, J. Bang, N. Nakamura, H. Hosono*

“Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors”

APL Materials, 7 (2019) 022501. (IF:6.635)

22.    H. Mizoguchi*, S Park, K. Kishida, M. Kitano, J. Kim, M. Sasase, T. Honda, K. Ikeda, T. Otomo, H. Hosono*

 “Zeolitic intermetallics, LnNiSi (Ln = La-Nd)”

Journal of the American Chemical Society, 141 (2019) 3376-3379. (IF: 16.383)

2018

21.    B. Wan, Y. Lu, Z. Xiao, Y. Muraba, J. Kim, D. Huang, L. Wu, H. Gou*, J. Zhang, F. Gao, H. Mao, H. Hosono*

“Identifying quasi-2D and 1D electrides in yttrium and scandium chlorides via geometrical identification”

NPj Computational Materials, (2018) 4(1), 77. (IF: 12.256)

20.    J. Kim*, K. Yamamoto, S. Iimura, S.Ueda, H. Hosono*

“Electron Affinity Control of Amorphous Oxide Semiconductors and Its Applicability to Organic Electronics”

Advanced Materials Interfaces, 5 (2018) 1801307. (IF:6.389)

19.    H. Yang, J. Kim*, K. Yamamoto, X. Xing, H. Hosono*

“Surface tailoring of newly developed amorphous Znsingle bondSisingle bondO thin films as electron injection/transport layer by plasma treatment: Application to inverted OLEDs and hybrid solar cells”

Applied Surface Science, 434 (2018) 995. (IF:7.392)

18.    T. Jun, K. Sim, S. Iimura, H. Kamioka, M. Sasase, J. Kim*, H. Hosono*

“Lead-free Highly Efficient Blue-emitting Cs3Cu2I5 with 0D Electronic Structure”

Advanced Materials, 30 (2018) 1804547. (IF: 32.086)

17.   T. Jun, J. Kim*, M. Sasase, H. Hosono*

“Material Design of P-type Transparent Amorphous Semiconductor, Cu-Sn-I“

Advanced Materials, 30 (2018) 1706573. (IF: 32.086)

16.    N. Nakamura, J. Kim, H. Hosono*

“Materials Design of Transparent Oxide Semiconductors for Organic Electronics: Why Do Zinc Silicate Thin Films Have Exceptional Properties?”

Advanced Electronic Materials, 4 (2018) 1700352. (IF:7.295)

2017

15.    T.Arai, S. Iimura*, J. Kim, Y. Toda, S. Ueda, H. Hosono*

“Chemical Design and Example of Transparent Bipolar Semiconductors“

Journal of the American Chemical Society, 139 (2017) 17175–17180. (IF: 16.383)

14. N. Nakamura, J. Kim*, K. Yamamoto, S. Watanabe, and H. Hosono*

“Organic Light-Emitting Diode Lighting with High Out-Coupling and Reliability: Application of Transparent Amorphous ZnO–SiO2 Semiconductor Thick Film“

Organic Electronics 51 (2017) 103-110. (IF: 3.868)

13.    J. Wang, K. Hanzawa, H. Hiramatsu, J. Kim, N. Umezawa, K. Iwanaka, T. Tada*, and Hideo Hosono*

“Exploration of the Stable Electrides in Strontium Phosphides: Theoretical Structure Prediction and Experimental Validation“

Journal of the American Chemical Society 139 (2017) 15668-15680. (IF: 16.383)

12.  J. Kim*, T. Sekiya, N. Miyokawa, N. Watanabe, K. Kimoto, K. Ide, Y. Toda, S. Ueda, N. Ohashi, H. Hiramatsu, H. Hosono and T. Kamiya*.

“Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor“

NPG Asia Materials. 9.3 (2017) :e359. (IF: 10.761)

11.   N. Watanabe, J. Kim, K. Ide, H. Hiramatsu, H. Kumigashira, S. Ueda, H. Hosono, and T. Kamiya*.

“Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass“

ECS Journal of Solid State Science and Technology, 6 (2017) 410-414. (IF: 1.808)

10.   H. Yang, J. Kim*, K. Yamamoto and H. Hosono*,

"Efficient charge generation layer for tandem OLEDs: Bi-layered MoO3/ZnO-based oxide semiconductor"

Organic Electronics, 46 (2017) 133-138. (IF: 3.868)

9.   D. Yoo, W. Jeon, J. Kim, J. Meng, Y. Yang, and J. Jo*.

"ZnO thin-film transistor grown by rf sputtering using Zn metal target and oxidizer pulsing"

Journal of the Ceramic Society of Japan 125 (2017) 112-117. (IF:1.217)

8.   H. Hosono*, J. Kim, Y. Toda, T. Kamiya, and S. Watanabe.

"Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs"

 Proceedings of the National Academy of Sciences 114.2 (2017) 233-238. (IF:12.777)

2016

7.    J. Kim*, N. Miyokawa, K. Ide, H. Hiramatsu, H. Hosono, and T. Kamiya

“Transparent Amorphous Oxide Semiconductor Thin Film Phosphor, In-Mg-O:Eu”

J. Ceram. Soc. Jpn. 124(5) (2016) 532-535. (IF:1.224)

6.    J. Kim*, K. Ide, Y. Toda, H. Hiramatsu, H. Hosono, and T. Kamiya

“Ultrawide bandgap amorphous oxide semiconductor, Ga-Zn-O”

Thin Solid Films 614 (2016) 84-89. (IF:2.358)

5.    J. Kim*, N. Miyokawa, K. Ide, Y. Toda, H. Hiramatsu, H. Hosono, and T. Kamiya

“Room-temperature Fabrication of Light-Emitting Thin Film Based on Amorphous Oxide Semiconductor”

AIP Advances 6 (2016) 015106. (IF:1.697)

2015

4.    H. Tang, J. Kim, H. Hiramatsu, H. Hosono, T. Kamiya*

“Fabrication and opto-electrical properties of amorphous (Zn,B)O thin film by pulsed laser deposition”

J. Ceramic. Soc. Jap., 123 (2015) 523-526. (IF: 1.224)

3.    J. Kim*, H. Hiramatsu, H. Hosono, and T. Kamiya

“Effects of sulfur substitution in amorphous InGaZnO4: Optical properties and first-principles calculations”

J. Ceramic. Soc. Jap., 123 (2015) 537-541. (IF:1.224)

2.    J. Kim, J. Meng, D. Lee, M. Yu, D. Yoo, D. Kang, and J. Jo*

"ZnO thin-film transistor grown by rf sputtering using carbon dioxide and substrate bias modulation"

Journal of Nanomaterials 2014 (2014) 176. (IF: 3.791)

1.    J. Kim*, H. Hiramatsu, H. Hosono, and T. Kamiya

“Fabrication and characterization of ZnS:(Cu,Al) thin film phosphors on glass substrates by pulsed laser deposition”

Thin Solid Films 559 (2014) 18.  (IF: 2.358)