Research Interest
NEXT-GENeration NEGATIVE CAPACITANCE FET
Background
As Moore`s law continue to reach its scaling limit, power consumption becomes an issue since supply voltage reduction becomes challenging, keeping in demand with higher drive current for faster computing. The sub-threshold characteristics in MOSFETs, which determines power dissipation, suffer from the Boltzmann tyranny which limits the sub-threshold swing to 60 mV/decade. A new class of devices, known as negative capacitance FETs, using ferroelectric materials, have been shown to achieve sub-60 mV/decade subthreshold behavior, opening up plethora of opportunities for ultra-low power computing. We use TCAD simulations to explore how the phenomenon of negative capacitance manifests into emerging device architectures: FinFET, Nanowire and Nanosheets.
Publications: Semiconductor Science and Technology (IOP), IEEE Transcations on Electron Devices, MRS Meeting
FET-BASED BIOSENSORS
Background
Field-effect transistors (FETs) have become attractive candidates for label-free biosensing due to low cost, low power consumption, small size, ease of on-chip integration as well as their ability to do rapid and real-time electronic detection.Emerging FETs with transition metal dichalcogenides (TMDCs)-based 2D materials, like MoS2, as the channel material as well as negative capacitance FETs, are excellent candidates for FET based biosensors. The simplest biosensors are the pH sensors. Here we use, TCAD to design and model next generation NCFET and TMDC FET biosensors.