Biography

Professor Hyungsoon Shin was born in Seoul, Korea, in 1959. He received B.S. in electronics engineering from the Seoul National University in 1982, M.S. and Ph.D. in electrical engineering from the University of Texas at Austin in 1984 and 1990, respectively.

From 1990 to 1994, he was with LG Semicon Co., Ltd., in Korea, where he worked on the development of DRAM, SRAM, and FLASH memory. In 1995, he left LG Semicon to join the faculty of the department of electronics engineering at Ewha Womans University, Seoul, Korea. Between 1996 and 1997, he served as the Director of Academic and Student Affairs in the College of Engineering. Between 2010 and 2011, he served as the Vice President for Office of Information and Communications.

His research areas include new processes, devices, and circuit developments and modeling based on Si, both for high density memory and RF IC. He has published numerous journal articles on implant profile models, mobility models, nano-scale MOSFET structure analysis, hot-carrier degradation, alpha-particle-induced soft error, MRAM, and magneto-logic.

He is a senior member of the Institute of Electrical and Electronics Engineers and a member of the Institute of Electronics Engineers of Korea. In 1991, he received the Technical Excellence Award from the Semiconductor Research Corporation (SRC).