Resistive Switching Materials

Resistive switching materials enable memristive devices to switch their resistance states under an electrical bias. We study material systems with diverse switching mechanisms, including ion migration, charge trapping, Mott transition, spin crossover, and other complex phenomena. Research is not only focused on simply enhancing device performance based on various mechanisms but also on identifying materials suitable for specific characteristics (e.g., self-rectification, forming-free, stochasticity, etc.) required in certain applications (e.g., neuron, synapse, random number generator, etc.). 

Several aspects of memristive physics remain inadequately understood. We use various techniques, such as scanning transmission X-ray microscopy (STXM), to gain a deeper understanding of switching mechanisms in various oxide materials that are used to develop physical models for post-CMOS memory devices.