Emerging Devices

Devices can be differentiated mainly by their materials and specific mechanisms. Developing devices using various materials to improve key performances, such as reliability, uniformity, and switching speed is the subject of this research. We explore different electrodes and resistive switching materials to make emerging devices with various switching mechanisms, including redox-based (cation-based, anion-based) switching, electronic switching, first- and second-order phase transitions, and complex switching. 

Device fabrication will then be further extended from crossbar arrays to vertical resistive switching random access memory (V-ReRAM) architectures for improved memory density. Furthermore, other emerging devices, such as electrochemical random access memory (ECRAM), 2T0C DRAM, and interconnects will be developed. Development of fabrication processes, such as atomic layer deposition and sputter systems will be implemented for novel device fabrication.