Book Chapters
F. Merrikh Bayat, M. Prezioso and B. Chakrabarti, "Experimental demonstration of firing rate neural networks based on metal-oxide memristive crossbars", Neuro-inspired Computing Using Resistive Synaptic Devices, Springer, pp. 113-134, April 2017.
Patents
B. Chakrabarti, S. Sonde, L. Ocola and S. Guha, “Resistive switching memory device”, US Patent 10483464, 2019.
Journals and Conference Proceedings
P. Basnet, E. Anderson, B. Chakrabarti, M. P. West, F. F. Athena and E. M. Vogel, "Quasi-HfOx/AlOy and AlOy/HfOx based memristor devices: role of bi-layered oxides in digital set and analog reset switching, arXiv preprint arXiv:2108.02247.
L. H. Reddy, S. R. Pande, T. Roy, E. M. Vogel, A. Chakravorty and B. Chakrabarti, “A SPICE compact model for forming-free, low-power Graphene-Insulator-Graphene ReRAM technology”, vol. 4, 1055-1065, Jul. 2021.
P. D. Patil, M. Wasala, R. Alkhaldi, L. Weber, K. K. Kovi, B. Chakrabarti, J. Nash, D. Rhodes, D. Rosenmann, R. Divan, A. Sumant, L. Balicas, N. R. Pradhan and S. Talapatra, “Photogating-driven enhanced responsivity in few-layered ReSe2 phototransistor”, Journal of Materials Chemistry C, 2021, https://doi.org/10.1039/D1TC01973B.
B. Chakrabarti, H. Chan, K. Alam, A. Koneru, T. E. Gage, L. E. Ocola, R. Divan, D. Rosenmann, A. Khanna, B. Grisafe, T. Sanders, S. Datta, I. Arslan, S. Sankaranarayan and S. Guha, “Nanoporous dielectric resistive memories using sequential infiltration synthesis”, ACS Nano, vol. 15(3), pp. 4155-4164, Mar. 2021 .
S. Guha, J. Lin, B. Chakrabarti, S. S. Sonde, “Materials challenges for non-silicon matrix multipliers and neuromorphic computing”, Bulletin of the American Physical Society, 2018.
S. S. Sonde, B. Chakrabarti, Y. Liu, K. Sasikumar, J. Lin, L. Stan, R. Divan, L. Ocola, D. Rosenmann, P. Choudhury, K. Ni, S. Sankaranarayanan, S. Datta and S. Guha, “Silicon compatible Sn-based resistive switching memory”, Nanoscale, DOI: 10.1039/c8nr01540f, 2018.
F. Merrikh Bayat, M. Prezioso, B. Chakrabarti, I. Kataeva and D. B. Strukov, “Memristor-based perceptron classifier: Increasing complexity and coping with imperfect hardware”, in Proceedings of ICCAD 2017, pp. 549-554, Nov. 2017.
S. S. Sonde, B. Chakrabarti, K. Sasikumar, L. Stan, S. Sankaranarayanan and S. Guha, “Viability of post-transition metal as anode for nano-ionic resistive switching based devices”, ECS Meeting Abstracts, pp. 824-824, Sep. 2017.
B. Chakrabarti, M. A. Lastras-Montaño, G. Adam, M. Prezioso, B. Hoskins, M. Payvand, A. Ghofrani, L. Theogarajan, K-T. Cheng and D. B. Strukov, “A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit”, Scientific Reports, vol. 7, p. 42429, Feb. 2017 (url: https://www.nature.com/articles/srep42429).
F. Merrikh Bayat, M. Prezioso, B. Chakrabarti, I. Kataeva and D. B. Strukov, “Advancing Memristive Analog Neuromorphic Networks: Increasing Complexity, and Coping with Imperfect Hardware Components”, arXiv preprint arXiv: 1611.04465 (2016).
F. Merrikh Bayat, M. Prezioso, B. Chakrabarti, H. Nili, I. Kataeva and D. B. Strukov, “Implementation of Multilayer Perceptron Network with Highly Uniform Passive Memristive Crossbar Circuits”, Nature Communications, vol. 9, 2331, June 2018 (url: https://www.nature.com/articles/s41467-018-04482-4).
M. A. Lastras-Montano, B. Chakrabarti, D. B. Strukov and K-T. Cheng, “HB-DPE: A High-Bandwidth Dot-Product Engine for High-Performance Neuromorphic Computing”, in Proc. DATE 2017, pp. 1257-1260, Mar. 2017.
G.C. Adam, B. D. Hoskins, M. Prezioso, F. Merrikh Bayat, B. Chakrabarti and D. B. Strukov, “3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications”, IEEE Transactions on Electron Devices, vol. 64, pp. 312-318, Jan. 2017 (url: http://ieeexplore.ieee.org/abstract/document/7763751/).
G.C. Adam, B. D. Hoskins, M. Prezioso, F. Merrikh Bayat, B. Chakrabarti and D. B. Strukov, “Highly-uniform multi-layer ReRAM crossbar circuits”, in Proc. ESSDERC 2016, pp. 436-439, Sep. 2016.
M. Prezioso, F. Merrikh-Bayat, B. Chakrabarti and D. Strukov, “RRAM-based hardware implementations of artificial neural networks: update and challenges ahead”, in Proc. SPIE 2016, Vol. 9749, pp 1-9, February 2016.
C. A. Joiner, T. Roy, Z. R. Hesabi, B. Chakrabarti, and E. M. Vogel, “Cleaning graphene with a titanium sacrificial layer”, Applied Physics Letters, Vol. 104, p. 223109, June 2014 (url: http://aip.scitation.org/doi/abs/10.1063/1.4881886).
T. Roy, L. Liu, S. de la Barrera, B. Chakrabarti, Z. R. Hesabi, C. A. Joiner, R. M. Feenstra, G. Gu, and E. M. Vogel, “Tunneling characteristics in chemical vapor deposited graphene-hexagonal boron nitride-graphene junctions”, Applied Physics Letters , Vol. 104, p. 123506, March 2014 (url: https://aip.scitation.org/doi/abs/10.1063/1.4870073).
B. Chakrabarti, E. Miranda, and E. M. Vogel, “Investigation of switching mechanism in forming-free multi-level resistive memories with atomic layer deposited HfTiOx nanolaminate”, in Proc., IEEE Device Research Conference, 2014, pp. 127-128.
B. Chakrabarti, T. Roy, and E. M. Vogel, “Non-linear switching with ultralow reset power in graphene-insulator-graphene forming-free resistive memories”, IEEE Electron Device Letters, Vol. 35, pp. 750-752, July 2014 (url: http://ieeexplore.ieee.org/abstract/document/6815667/).
B. Chakrabarti, T. Roy, C. A. Joiner, Z. R. Hesabi, and E. M. Vogel, “Forming-free resistive switching with low current operation in graphene-insulator-graphene structures”, in Proc. 71st Annual Device Research Conference, pp. 55-56, June 2013.
B. Chakrabarti and E. M. Vogel, "Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminate", Microelectronics Engineering, Vol. 109, pp. 193-196, September 2013.
B. Chakrabarti, R. V. Galatage, and E. M. Vogel, "Multilevel switching in forming-free resistive memory devices with atomic layer deposited HfTiOx nanolaminate", IEEE Electron Device Letters, Vol. 34, pp. 867-869, July 2013 (url: http://ieeexplore.ieee.org/abstract/document/6530683/).
D. Veksler, G. Bersuker, L. Vandelli, A. Padovani, L. Larcher, A. Muraviev, B. Chakrabarti, E. Vogel, D. C. Gilmer, and P. D. Kirsch, "Random Telegraph noise (RTN) in scaled RRAM devices", in Proc., IEEE International Reliability Physics Symposium, 2013, pp. MY.10.1- MY.10.4.
D. Veksler, G. Bersuker, B. Chakrabarti, E. Vogel, S. Deora, D. C. Gilmer, H. -F. Li, S. Gausepohl, and P. D. Kirsch, "Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics", in IEDM Technical Digest, 2012, pp. 9.6.1-9.6.4 (url: https://ieeexplore.ieee.org/abstract/document/6479013/).
A. Subramaniam, K. D. Cantley, R. A. Chapman, B. Chakrabarti, and E. M. Vogel, "Ambipolar nano-crystalline-silicon TFTs with submicron dimensions and reduced threshold voltage shift", in Proc., IEEE Device Research Conference, 2011, pp. 99-100.
B. Chakrabarti, H. S. Kang, B. Brennan, T. J. Park, K. D. Cantley, A. Pirkle, S. McDonnel, J. Kim, R. M. Wallace, and E. M. Vogel, " Investigation of tunneling current in SiO2/HfO2 gate stacks for Flash memory applications", IEEE Transactions on Electron Devices, Vol. 58, No. 12, December 2011.
Presentations and Posters
B. Chakrabarti, K. Alam, T. E. Gage, L. Ocola, R. Divan, D. Rosenmann, A. Khanna, B. Grisafe, T. Sanders, S. Datta, I. Arslan and S. Guha, “Sequential infiltration synthesis of nano-porous alumina for resistive switching memory with ultra-high on/off ratio and low voltage operation”, MRS Fall 2019, Boston, USA, December 2019.
G. Adam, B. Chakrabarti, B. D. Hoskins, H. Nili and D. B. Strukov, "Fabrication, CMOS integration and applications of non-volatile 3D metal oxide crossbars", International Conference on Memristive Materials, Devices and Systems (MEMRISYS 2017), Athens, Greece, April 2017.
M. A. Lastras-Montano, B. Chakrabarti, D. B. Strukov and K.-T. Cheng, "HB-DPE: A High-Bandwidth Dot-Product Engine for High-Performance Neuromorphic Computing", DATE 2017, Lausanne, Switzerland, March 2017.
B. Chakrabarti, M. A. Lastras-Montano, G. Adam, M. Prezioso, B. Hoskins, A. Shkabko, K-T. Cheng and D. B. Strukov, “High-precision tunable memristive devices with low current operation monolithically integrated on 0.5 µm CMOS technology”, MRS Fall 2016, Boston, MA, December 2016.
G.C. Adam, B. D. Hoskins, M. Prezioso, F. Merrikh Bayat, B. Chakrabarti and D. B. Strukov, “Highly-uniform multi-layer ReRAM crossbar circuits”, ESSDERC 2016, Lausanne, Switzerland, September 2016.
B. Chakrabarti, E. Miranda, and E. M. Vogel, “Investigation of switching mechanism in forming-free multi-level resistive memories with atomic layer deposited HfTiOx nanolaminate”, 72nd Annual Device Research Conference, Santa Barbara, CA, June 2014.
T. Roy, Z. R. Hesabi, B. Chakrabarti, C. A. Joiner, and E. M. Vogel, “Resonant tunneling in CVD Graphene-Insulator-Graphene devices with high-k tunnel dielectrics”, 44th IEEE Semiconductor Interface Specialists Conference, Arlington, VA, December 2013.
B. Chakrabarti, T. Roy, N. A. Ellis, C. A. Joiner, Z. R. Hesabi, and E. M. Vogel, "Resistance switching in graphene-insulator-graphene structures", SRC TECHCON, Austin, TX, September 2013.
B. Chakrabarti and E. M. Vogel, "Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminate", 18th Conference of Insulating Films on Semiconductors, Krakow, Poland, June 2013.
B. Chakrabarti, T. Roy, C. A. Joiner, Z. R. Hesabi, and E. M. Vogel, “Forming-free resistive switching with low current operation in graphene-insulator-graphene structures”, 71st Annual Device Research Conference, Notre Dame, IN, June 2013.
D. Veksler, G. Bersuker, L. Vandelli, A. Padovani, L. Larcher, A. Muraviev, B. Chakrabarti, E. Vogel, D. C. Gilmer, and P. D. Kirsch, "Random Telegraph noise (RTN) in scaled RRAM devices", IEEE International Reliability Physics Symposium, Monterey , CA, April 2013.
B. Chakrabarti, N. A. Ellis, and E. M. Vogel, "Multilevel switching in forming free mixed HfTiOx RRAM", MRS Spring Meeting, San Francisco, CA, April 2013.
D. Veksler, G. Bersuker, B. Chakrabarti, E. Vogel, S. Deora, D. C. Gilmer, H. -F. Li, S. Gausepohl, and P. D. Kirsch, "Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics", International Electron Device Meeting, San Francisco, CA, December 2012.
A. Subramaniam, K. D. Cantley, R. A. Chapman, B. Chakrabarti, and E. M. Vogel, "Ambipolar nano-crystalline-silicon TFTs with submicron dimensions and reduced threshold voltage shift", IEEE Device Research Conference, Santa Barbara, June 2011.
B. Chakrabarti, H. Kang, A. Pirkle, B. Brennan, S. McDonnel, N. V. Nguyen, R. M. Wallace, and E. M. Vogel, "Investigation of SiO2/HfO2 stacks for Flash memory applications", MRS Spring Meeting, San Francisco, CA, April 2011
Invited Talks
B. Chakrabarti, “Memristive Devices for Brain-Inspired Computing: From Materials Design to the Development of Memristive Neural Networks”, National Institute of Standards and Technology, Gaithersburg, Maryland, USA, July 2021.
B. Chakrabarti, “In-memory computation with memristive nanodevices: pathways to next-generation hardware accelerators”, Faculty Development Program, Centre for Advanced Electronics (CAE), IIT Indore, Indore, India, February 2021.
B. Chakrabarti, “Memristive devices for beyond-CMOS computing: from materials design to the development of artificial neural networks”, Special Alumni Seminar, Materials Science and Engineering, University of Texas at Dallas, Texas, USA, January 2021.
B. Chakrabarti, “Need for NVMs for information storage and hardware acceleration”, VAIBHAV Summit, India, October 2020.
B. Chakrabarti, “Neuromorphic engineering for energy efficient computing and biohybrid interfaces”, Indian Institute of Technology Bombay, Mumbai, India, January 2018.
B. Chakrabarti, “Post-CMOS electronic devices for neuromorphic computation and neural interfaces”, Internal Workshop on Physics of Semiconductor Devices (IWPSD), Kolkata, India, December 2019.