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A Full Range High Sensitivity ISFET Sensor for Simultaneous Multi-Ion Detection in 45 nm CMOS Technology (2024)
Ø Explored the behavior of ISFET for electrolyte ions like Na, K, and H ions. The underlying infrastructure of ISFET and the passivation/sensing layer schematic model are also studied.
Ø Simulated the model of ISFET array for sample detection platform along with a readout circuit at 45 nm CMOS Technology in Cadence Virtuoso.
Ø Finally, the performance analysis of the VLSI layout design is accomplished with the necessary graphical study.
Area: Bioelectronics & VLSI Design
Supervisor: Dr. Hamidur Rahman, Associate Professor, Dept. of EEE, BUET
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