Papers

2025 (total 47, main 15)

1. Charge Integrated Graph Neural Network-based Machine Learning Potential for Amorphous and Non-stoichiometric Hafnium Oxide
   {H. G. Shin, S. H. Kim}, E. H. Kim, J. H. Gu, J. Kim, S.-G. Kim, S. H. Kim, H. Kim, S. Kim, D.-H. Choe, D. Lee*
   npj Computational Materials 11, 382 (2025)

2. Ferroelectric transistors for low-power NAND flash memory
   S. Yoo, T. J. Kim, S.-G. Nam, D. Kim, K. Kim, Y. Lee, M. Jung, K.-H. Lee, S. Choi, S. D. Hyun, M.-H. Lee, S. Hong, H. Kim, K. D. Bae, H. Lee, J. Y. Won, D.-J. Yun, B. G. Chae, W. G. Hahn, C. H. Joo, S. Jo, Y. Park, K. M. Song, K. Jung, S. Lim, K. Seo, K. Kim, W. Kim, D. Ha, J.-E. Yang, S.-Y. Yang, S. Kim*, J. Heo, D.-H. Choe*
   Nature 648, 320 (2025) [Science] [삼성전자 뉴스룸] [조선비즈] [동아사이언스] [연합뉴스] [tom's hardware]

3. Laminated Ferroelectric Stack for Enhanced ISPP Slope and Endurance in FE-NAND
   H. J. Lee, M. Sohn, S. Yoo, Y. Lee, K. Kim, S.-G. Nam, Y. Park, S. Jo, D. Kim, J. Heo, W. Kim, D. Ha, A. Khan, S. Yu, D.-H. Choe*, S. Datta*
   IEEE Electron Device Letters 47, 188 (2025)

4. Reducing coercive field and improving endurance in ferroelectric Hf0.5Zr0.5O2 thin films via noval interface layer approach
   J. S. Kim*, B. Gaggio, B. Bakhit, V. Lenzi, L. Marques, S. M. Fairclough, N. Strkalj, D.-H. Choe, J. P. B. Silva*, J. L. MacManus-Driscoll*
   Advanced Science e17314, published online

5. Fatigue-Free Ferroelectric HZO Operable at 1V with >10^12 Endurance via Precycling Pulse Engineering
   {K. Song, D. Kim, D. Kim}, S. Lee, H. H. Lee, S. Nam, S. Kim, J. Lee, S. Yoo, Y. Park, S. M. Lee, K. Lee, I. Jeon, C. H. Jung, D. Ha, H. Lim, J. Heo, K. Jung*, D.-H. Choe*
   IEEE International Electron Devices Meeting (IEDM) accepted

6. {J.-k. Kim, S. Yoo, S.-G. Nam}, H. Hong, K. Jung, Y. Jang, B. Kim, S. Jo, N.-R. Han, D. Kim, K. M. Song, J.-E. Yang*, D.-H. Choe*, S. Kim*, J. Heo
   Designing Oxide-Channel FeFETs for 1T Embedded Memory
   IEEE International Electron Devices Meeting (IEDM) accepted

7. Field-induced structural dynamics of polarization switching in HfxZr1-xO2 thin films
   {S. Lee, S. Kim}, S. Y. Park, D. Kim, S. Y. Lee, D. Ham, H. H. Lee, D. Yun, S. Park, S. Sul, S. Kang, G. Kim, D.-H. Choe, J. Lee, B. Kim, J. Heo, H.-S. Jung, H. Lim, W. Choi*, J.-G Song*
   Advanced Materials e10930, published online (2025)

8. Ferroelectric NAND for efficient hardware bayesian neural networks
   M. Song, R.-H. Koo, J. Kim*, C.-H. Han, J. Yim, J. Ko, S. Yoo, D.-H. Choe, S. Kim, W. Shin, D. Kwon*
   Nature Communications 16, 6879 (2025)

2024 (total 39, main 11)

1. Gate-stack Optimization to Mitigate the Cylindrical Effect in Ferroelectric VNAND
   K. Kim, S. Lim, J. Woo, J. Lim, S. Yoo, H. Kim, J. Park, H. Jun, S. Kim, M. Woo, T. Kim, S. Park, H. Ko, Y. Noh, M. Choi, J. Baek, J. Kim, K. Lee, S. Park, D.-H. Choe, M. Jung, G. Yon, S. Lee, H. J. Kim, K. Kim, S. Hong, K. Park, B. J. Kuh, W. Kim, D. Ha, S. Ahn, J. Song
   IEEE International Electron Devices Meeting (IEDM) (2024)

2. Boosting non-volatile memory performance with exhalative annealing: A novel approach to low-temperature crystallization of hafnia based ferroelectric
   Y. Lee, U. J. Kim, K. Kim, D.-J. Yun, D.-H. Choe*, S. Yoo, H. J. Lee, S.-G. Nam, S. Jo, Y. Park, D. Kim, D. Kim, H. Kim, K. Shin, S. Nahm*, J. Heo*
   Materials Today Nano 28, 100546 (2024) [arXiv]

3. Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering
   A. Jan, S. A. Fraser, T. Moon, Y. S. Lee, H. Bae, H. J. Lee, D.-H. Choe, M. T. Becker, J. L. MacManus-Driscoll, J. Heo, G. Di Martino*
   Small Science 4, 2400223 (2024)

4. A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND
   I. Myeong, S. Lim, T. Kim, S. Park, S. Noh, S. M. Lee, J. Woo, H. Ko, Y. Noh, M. Choi, K. Lee, S. Han, J. Baek, K. Kim, D. Jung, J. Kim, J. Park, S. Kim, H. Kim, I. Yoon, J. Kim, K. Kim, K. Park, B. J. Kuh, W. Kim, D. Ha, S. Ahn, J. Song, S. Yoo, H. J. Lee, D.-H. Choe, S.-G. Nam, J. Heo
   IEEE International Reliability Physics Symposium (IRPS) (2024)

5. Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FET
   T. Kim, S. Lim, I. Myeong, S. Park, S. Noh, S. M. Lee, J. Woo, H. Ko, Y. Noh, M. Choi, K. Lee, S. Han, J. Baek, K. Kim, D. Jung, J.-S. Kim, J. Park, S. Kim, H. Kim, S. Yoo, H. J. Lee, D.-H. Choe, S.-G. Nam, I. Yoon, C. Kim, K. Kim, K. Park, B. J. Kuh, J. Heo, W. Kim, D. Ha, J. Song
   IEEE International Reliability Physics Symposium (IRPS) (2024)

6. Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-deficient Channel and Gate Interlayer
   S. Yoo*, D. Kim, D.-H. Choe, H. J. Lee, Y. Lee, S. Jo, Y. Park, K. H. Kim, K. Jung, M. Jung, K.-H. Lee, J.-E. Yang, S. Kim, S.-G. Nam
   Symposium on VLSI Technology (2024)

7. Laminated Ferroelectric FET with large memory window and high reliability
   H. J. Lee, S. Nam, Y. Lee, K. Kim, D.-H. Choe, S. Yoo, Y. Park, S. Jo, D. Kim, J. Heo*
   IEEE Transactions on Electron Devices 71, 2411 (2024)

8. Interfacial Layer Selection Methodology for Customized Ferroelectric Memories
   H. J. Lee, T. Moon, S. Nam, H. Bae, D.-H. Choe, S. Jo, Y. Lee, Y. Park, K. Kim, J. Heo*
   IEEE Transactions on Electron Devices 71, 1907 (2024)

2023 (total 31, main 10)

1. An Analytical Interpretation of the Memory Window in Ferroelectric Field-Effect Transistors
   S. Yoo, D.-H. Choe, H. J. Lee, S. Jo, Y. S. Lee, Y. Park, K.-H. Kim, D. Kim, S.-G. Nam*
   Appl. Phys. Lett. 123, 222902 (2023)

2. Roadmap on ferroelectric hafnia and zirconia-based materials and devices
   J. P. B. Silva, R. Alcala, U. E. Avci, N. Barrett, L. Bégon-Lours, M. Borg, S. Byun, S.-C. Chang, S.-W. Cheong, D.-H. Choe, J. Coignus, V. Deshpande, A. Dimoulas, C. Dubourdieu, I. Fina, H. Funakubo, L. Grenouillet, A. Gruverman, J. Heo, M. Hoffmann, H. A. Hsain, F.-T. Huang, C. S. Hwang, J. Íñiguez, J. L. Jones, I. V. Karpov, A. Kersch, T. Kwon, S. Lancaster, M. Lederer, Y. Lee, P. D. Lomenzo, L. W. Martin, S. Martin, S. Migita, T. Mikolajick, B. Noheda, M. H. Park, K. M. Rabe, S. Salahuddin, F. Sánchez, K. Seidel, T. Shimizu, T. Shiraishi, S. Slesazeck, A. Toriumi, H. Uchida, B. Vilquin, X. Xu, K. H. Ye, U. Schroeder*
   APL Materials 11, 089201 (2023)

3. Negative Differential Capacitance in Ultrathin Ferroelectric Hafnia
   {S. Jo, H. Lee}, D.-H. Choe, J.-H. Kim, Y. S. Lee, O. Kwon, S. Nam, Y. Park, K. Kim, B. G. Chae, S. Kim, S. Kang, T. Moon, H. Bae, J. Y. Won, D.-J. Yun, M. Jeong, H. H. Lee, Y. Cho, K.-H. Lee, H. J. Lee, S. Lee, K.-J. Nam, D. Jung, B. J. Kuh, D. Ha, Y. Kim, S. Park, Y. Kim, E. Lee*, J. Heo*
   Nature Electronics 6, 390 (2023). [Research Briefing] [TechXplore] [연합뉴스] [삼성반도체 뉴스룸] 

4. Parallel synaptic design of ferroelectric tunnel junctions for neuromorphic computing
   T. Moon, H. J. Lee, S.-G. Nam, H. Bae, D.-H. Choe, S. Jo, Y. Lee, Y. Park, J. J. Yang*, J. Heo*
   Neuromorphic Computing and Engineering 3, 024001 (2023)

5. In Operando Optical Tracking of Oxygen Vacancy Migration and Phase Change in few Nanometers Ferroelectric HZO Memories
   {A. Jan, T. Rembert}, S. Taper, J. Symonowicz, N. Strkalj, T. Moon, Y. S. Lee, H. Bae, H. J. Lee, D.-H. Choe, J. Heo, J. MacManus-Driscoll, B. Monserrat, G. Di Martino*
   Advanced Functional Materials 2023, 2214970 (2023).

2022 (total 26, main 10)

1. Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics
   {J. Y. Park, D.-H. Choe, D. H. Lee}, G. T. Yu, K. Yang, S. H. Kim, G. H. Park, S,-G. Nam, H. J. Lee, S. Jo, B. J. Kuh, D. Ha, Y. Kim, J. Heo*, M. H. Park*
   Advanced Materials 2023, 2204904 (2022) [Frontispiece] [Special Issue: University–Industry Research Collaborations in South Korea]

2021 (total 25, main 9)

1. Surface-functionalized hafnia with bespoke ferroelectric properties for memory and logic applications
   D.-H. Choe*, H. Bae, H. Lee, Y. Lee, T. Moon, S. G. Nam, S. Jo, H. J. Lee, E. Lee, J. Heo*
   IEEE International Electron Devices Meeting (IEDM) 15.1, 326 (2021). [pdf] [Highlighted paper] [SemiEng article]

2. Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls
   D.-H. Choe, S. Kim, T. Moon, S. Jo, H. Bae, S.-G. Nam, Y. S. Lee, J. Heo*
   Materials Today 50, 8 (2021). [pdf] [supplementary mater] [Inner Cover article] [Highlighted paper]

3. Ferroelectric diodes with sub-ns and sub-fJ switching and its programmable network for logic-in-memory applications
   H. Bae, T. Moon, S. Nam, K. Lee, S. Kim, S. Hong, D.-H. Choe, S. Jo, Y. S. Lee, J. Heo*
   Symposium on VLSI Technology (2021). [pdf]

4. Revealing the vacuum level in an infinite solid by real-space potential-unfolding
   D.-H. Choe, D. West, S. Zhang*
   Physical Review B 103, 235202 (2021). [pdf] [supplemental mater] [arXiv] 

5. Unveiling the origin of robust ferroelectricity in sub-2 nm hafnium zirconium oxide films
   {H. Lee, D.-H. Choe, S. Jo}, J.-H. Kim, H. H. Lee, Y. Park, S. Kang, Y. Cho, S. Park, T. Moon, D. Eom, M. Leem, Y. Kim, J. Heo*, E. Lee*, H. Kim*
   ACS Applied Materials & Interfaces 13, 36499 (2021). [pdf] [supporting info]

6. Polarization at the nanoscale
   K. Yang, Z. Jiang, D.-H. Choe, D. West*, S. Zhang
   arXiv (2021)

2020 (total 20, main 5)

1. Sub-ns polarization switching in 25nm FE-FinFET toward post CPU and spatial-energetic mapping of traps for enhanced endurance
   {H. Bae, S. G. Nam}, T. Moon, Y. Lee, S. Jo, D.-H. Choe, S. Kim, K.-H. Lee, J. Heo*
   IEEE International Electron Devices Meeting (IEDM) 31.3 (2020).

2. Not open to the public
   T. Moon et al., J. Heo*
   Symposium on VLSI Technology, accepted.

2019 (total 18, main 5)

1. Carrier multiplication in van der Waals layered transition metal dichalcogenides
   {J.-H. Kim, M. R. Bergren, J. C. Park}, S. Adhikari, M. Lorke, T. Fraunheim, D.-H. Choe, B. Kim, H. Choi, T. Gregorkiewicz, Y. H. Lee*
   Nature Communications 10, 5488 (2019). [pdf] [supplementary info] [arXiv] [Top 50 Physics Articles in Nat. Comm.]

2. Photo-induced vacancy ordering and phase transition in MoTe2
   C. Si, D.-H. Choe, W. Xie, H. Wang, Z. Sun, J. Bang*, S. Zhang*
   Nano Letters 19, 3612 (2019). [pdf] [supporting info]

3. Machine learning augmented discovery of chalcogenide double perovskites for photovoltaics
   M. Agiorgousis, Y.-Y. Sun*, D.-H. Choe, D. West, S. Zhang*
   Advanced Theory and Simulations 2, 1800173 (2019). [pdf] [supporting info]

2018 (total 15, main 5)

1. Band alignment and built-in potential of solids
   D.-H. Choe, D. West, S. Zhang*
   Physical Review Letters 121, 196802 (2018). [pdf] [arXiv]

2. Quantum oscillation in carrier transport in two-dimensional junctions
   J. Zhang, W. Xie, M. Agiorgousis, D.-H. Choe, V. Meunier, X. Xu, J. Zhao*, S. Zhang*
   Nanoscale 10, 7912 (2018). [pdf] [supplementary info] [arXiv]

3. Traditional semiconductors in the two-dimensional limit
   {M. C. Lucking, W. Xie}, D.-H. Choe, D. West*, T.-M. Lu, S. Zhang
   Physical Review Letters 120, 086101 (2018). [pdf] [supplemental mater] [arXiv]

2017 (total 12, main 4)

1. Three-dimensional buckled honeycomb boron lattice with vacancies as an intermediate phase on the transition pathway from α-B to γ-B
   W. H. Han, Y. J. Oh, D.-H. Choe, S. Kim, I.-H. Lee, K. J. Chang*
   NPG Asia Materials 9, e400 (2017). [pdf] [supplementary info]

2. Te vacancy-driven superconductivity in orthorhombic molybdenum ditelluride
   {S. Cho, S. H. Kang}, H. S. Yu, H. W. Kim, W. Ko, S. W. Hwang, W. H. Han, D.-H. Choe, K. J. Chang, Y. H. Lee*, H. Yang*, S. W. Kim*
   2D Materials 4, 021030 (2017). [pdf] [supplementary info]

3. Long-range lattice engineering of MoTe2 by 2D electride
   {S. Kim, S. Song}, J. Park, H. Yu, S. Cho, D. Kim, J. Baik, D.-H. Choe, K. J. Chang, Y. H. Lee, S. W. Kim*, H. Yang*
   Nano Letters 17, 3363 (2017). [pdf] [supporting info]

2016 (total 9, main 4)

1. Tuning Dirac points by strain in MoX2 nanoribbons (X=S, Se, Te) with 1T’ structure
   H.-J. Sung, D.-H. Choe, K. J. Chang*
   Physical Chemistry Chemical Physics 18, 16361 (2016). [pdf] [supplementary mater] 

2. Understanding topological phase transition in transition metal dichalcogenides
   D.-H. Choe*, H.-J. Sung, K. J. Chang*
   Physical Review B 93, 125109 (2016). [pdf] [arXiv]

2015 (total 7, main 3)

1. Phase patterning for Ohmic homojunction contact in MoTe2
   S. Cho, S. Kim, J. H. Kim, J. Zhao, J. Seok, D. Keum, J. Baik, D.-H. Choe, K. J. Chang, K. Suenaga, S. W. Kim*, Y. H. Lee*, H. Yang*
   Science 349, 625 (2015). [pdf] [supplementary mater] [한국일보] [동아사이언스] [매일경제]

2. Universal conductance fluctuation in two-dimensional topological insulators
   D.-H. Choe, K. J. Chang*
   Scientific Reports 5, 10997 (2015). [pdf]

3. Bandgap opening in few-layered monoclinic MoTe2
   {D. Keum, S. Cho}, J. H. Kim, D.-H. Choe, H.-J. Sung, M. Kan, H. Kang, J.-Y. Hwang, S. W. Kim*, H. Yang*, K. J. Chang*, Y. H. Lee*
   Nature Physics 11, 482 (2015). [pdf] [supplementary info] [YTN] [연합뉴스] [동아일보] [한겨레] [대전일보]

4. Bandgap widening of phase quilted, 2D MoS2 by oxidative intercalation
   {S. H. Song, B. H. Kim}, D.-H. Choe, J. Kim, D. C. Kim, D. J. Lee, J. M. Kim, K. J. Chang*, S. Jeon*
   Advanced Materials 27, 3152 (2015). [pdf] [supporting info]

~2014 (total 3, main 2)

1. The effects of surface polarity and dangling bonds on the electronic properties of monolayer and bilayer MoS2 on α-quartz
   H.-J. Sung, D.-H. Choe, K. J. Chang*
   New Journal of Physics 16, 113055 (2014). [pdf] [video abstract]

2. Effect of dimensionality on the localization behavior of hydrogenated graphene systems
   D.-H. Choe, K. J. Chang*
   Nano Letters 12, 5175 (2012). [pdf] [supporting info] [YTN] [대전일보]

3. Electronic structure and transport properties of hydrogenated graphene and graphene nanoribbons
   D.-H. Choe, J. Bang, K. J. Chang*
   New Journal of Physics 12, 125005 (2010). [pdf]