News
2023/11/28:
Our NCFET team of 16 members, led by Duk-Hyun Choe, was honored as one of the top 25 teams (ranking undisclosed) at the SAIT Project Festival [~ 67M KRW/team].
2023/10/24:
Sanghyun Jo, Duk-Hyun Choe (20% contribution), Hyangsook Lee has been awarded Gold Award in the Samsung Best Paper Awards.
This represents the 1st place in the Materials Division [10M KRW].
2023/5/21-5-24:
Duk-Hyun Choe attended the IMW 2023 (International Memory Workshop) held in Monterey, CA, USA.
2023/3/1:
Duk-Hyun Choe has been granted an early promotion to Principal Researcher (CL4) at Samsung Advanced Institute of Technology (SAIT).
2022/7/1:
Duk-Hyun Choe gave an invited talk titled "Atomic-level understanding of HfO2-based ferroelectrics and their ultrafast polarization switching" at the `22 ISAF conference held in Tours, France.
Duk-Hyun Choe was invited as a Young Ferroelectric Investigator, and co-chaired 2 sessions with Dr. Jan Schultheiss.
2021/12/10:
Our paper "Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls" by Duk-Hyun Choe et al. is recognized as one of the 3 Highlighted Papers in the Nov. issue of Materials Today journal (2021 Impact Factor: 31.04).
This represents one of the top 13 papers in total 179 published papers in 2021.
2021/12/2:
Duk-Hyun Choe has been awarded 2021 WTC paper award from Material Center in Samsung Advanced Institute of Technology (SAIT).
2021/10:
Our paper "Surface-Functionalized Hafnia with Bespoke Ferroelectric Properties for Memory and Logic Applications" by Duk-Hyun Choe et al. is recognized as one of the 15 highlighted papers out of 220+ accepted papers in IEDM 2021.
The paper is briefly introduced in the IEEE EDS Newsletter as a Noteworthy Paper and in an article by Mark LePedus published in Semiconductor Engineering.
2021/10/25:
Duk-Hyun Choe (50% contribution), Jinseong Heo, Sanghyun Jo has been awarded Grand Award in the Samsung Best Paper Awards.
This represents the 1st place in the entire Samsung Group [30M KRW].
2021/10/21:
Duk-Hyun Choe (60% contribution) has been awarded the DS Patent Award by Samsung Electronics [5M KRW].
2021/8/14:
The artwork of our paper "Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls" by Duk-Hyun Choe et al. is selected as Inner Cover in Materials Today journal (2021 Impact Factor: 31.04).
2019/10/1:
Duk-Hyun Choe joined Samsung Advanced Institute of Technology (SAIT) as a Staff Researcher (CL3).