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2025/11/26-28:
Our paper "Ferroelectric transistors for low-power NAND flash memory" is published in Nature.
Press (50+ news articles)
[Science] New materials could supercharge computer memory chips
[삼성전자 뉴스룸] 삼성전자 연구진이 규명한 초저전력 낸드플래시 기술, 세계적 학술지에 게재되다
[Samsung Newsroom] Samsung Researchers Publish Ultra-Low-Power NAND Flash Innovation in Nature
[연합뉴스] 삼성전자 초저전력 낸드 기술, '네이처'에 게재
[tom's HARDWARE] Samsung touts 96% lower-power NAND design
2025/9/29-30:
Duk-Hyun Choe attended the Samsung-MIT Semiconductor Workshop held in MIT, Cambridge, MA, USA.
Duk-Hyun delivered an invited talk at the MTL Seminar Series (arranged by Prof. Suraj Cheema)
2025/7/10:
Duk-Hyun Choe participated in 제 21회 고등과학원 전자구조계산회 as a session chair.
2025/6/26-27:
Duk-Hyun Choe attended 2025 MIT-Samsung Semiconductor Workshop held in Samsung, Hwasung, Korea.
2024/9/24-27:
Duk-Hyun Choe attended the LMD/NMP Annual Review by Semiconductor Research Corporation (SRC) held in Intel Gordon Moore Park, Hillsboro, OR, USA.
2024/7/24:
Sijung Yoo, Donghoon Kim, Duk-Hyun Choe (20% contribution) has been awarded DS Paper Award by Samsung Electronics [5M KRW].
2023/11/28:
Our NCFET team of 16 members, led by Duk-Hyun Choe, was honored as one of the top 25 teams (ranking undisclosed) at the SAIT Project Festival [~ 67M KRW/team].
2023/10/24:
Sanghyun Jo, Duk-Hyun Choe (20% contribution), Hyangsook Lee has been awarded Gold Award in the Samsung Best Paper Awards.
This represents the 1st place in the Materials Division [10M KRW].
2023/5/21-5-24:
Duk-Hyun Choe attended the IMW 2023 (International Memory Workshop) held in Monterey, CA, USA.
2023/3/1:
Duk-Hyun Choe has been granted an early promotion to Principal Researcher (CL4) at Samsung Advanced Institute of Technology (SAIT).
2022/7/1:
Duk-Hyun Choe gave an invited talk titled "Atomic-level understanding of HfO2-based ferroelectrics and their ultrafast polarization switching" at the `22 ISAF conference held in Tours, France.
Duk-Hyun Choe was invited as a Young Ferroelectric Investigator, and co-chaired 2 sessions with Dr. Jan Schultheiss.
2021/12/10:
Our paper "Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls" by Duk-Hyun Choe et al. is recognized as one of the 3 Highlighted Papers in the Nov. issue of Materials Today journal (2021 Impact Factor: 31.04).
This represents one of the top 13 papers in total 179 published papers in 2021.
2021/10:
Our paper "Surface-Functionalized Hafnia with Bespoke Ferroelectric Properties for Memory and Logic Applications" by Duk-Hyun Choe et al. is recognized as one of the 15 highlighted papers out of 220+ accepted papers in IEDM 2021.
The paper is briefly introduced in the IEEE EDS Newsletter as a Noteworthy Paper and in an article by Mark LePedus published in Semiconductor Engineering.
2021/10/25:
Duk-Hyun Choe (50% contribution), Jinseong Heo, Sanghyun Jo has been awarded Grand Award in the Samsung Best Paper Awards.
This represents the 1st place in the entire Samsung Group [30M KRW].
2021/10/21:
Duk-Hyun Choe (60% contribution) has been awarded the DS Patent Award by Samsung Electronics [5M KRW].
2021/8/14:
The artwork of our paper "Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls" by Duk-Hyun Choe et al. is selected as Inner Cover in Materials Today journal (2021 Impact Factor: 31.04).
2019/10/1:
Duk-Hyun Choe joined Samsung Advanced Institute of Technology (SAIT) as a Staff Researcher (CL3).
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