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Join Us! Internship & Dissertation Opportunities in Ferroelectric Thin Films Research for Flexible Electronics. Apply Now!
Advancing ferroelectrics, thin films, and energy storage solutions for next-gen devices.
Dr. Shibnath Samanta
Dr. Shibnath Samanta
Functional Materials Researcher
Current: Ramanujan Fellow at IASST (2023–Present)
Previous: GIST, South Korea | SIT, Japan | IIT Madras | IIT Delhi
Research Areas
Research Areas
🔬 Ferroelectric Thin Films
⚡ Energy Storage Materials
❄️ Electrocaloric Devices
HfO₂ Breakthrough🔬
HfO₂ Breakthrough🔬
Domain-engineered HfO₂ thin films for electrocaloric cooling (Korean patent).
PZT Innovation⚡
PZT Innovation⚡
Patented sintering method for lead-loss minimization (IN 364983)
Freestanding Films🌀
Freestanding Films🌀
Transparent flexible electronics
(DST-Ramanujan Project).
Latest Publications
Latest Publications
Large electrocaloric effect with high stability
Large electrocaloric effect with high stability
Record-Breaking Electrocaloric Cooling
Y:HfO₂ Thin Films for Solid-State Refrigeration
Journal of Materials Chemistry A
Achieved 24.8K temperature change (0.7K cm MV⁻¹ strength)
40 thermal cycles with <5% performance loss
Stability test more than 1 million electric field cycles
Toward Wake-Up Free Ferroelectricity in Y:HfO2
Toward Wake-Up Free Ferroelectricity in Y:HfO2
Wake-Up-Free Ferroelectric HfO₂ Thin Films
Y-doped HfO₂ on Si Substrate
Journal of Alloys and Compounds
Eliminated wake-up effect via multi-step oxygen annealing
Achieved direct polar phase growth
Enables more reliable memory devices
Ferroelectricity in Y:HfO2 thin films grown on transparent FTO/glass
Ferroelectricity in Y:HfO2 thin films grown on transparent FTO/glass
Transparent Ferroelectric Memories
Yttrium-doped HfO₂ on FTO/Glass
Advanced Materials Interfaces
Achieved >70% visible-light transparency while retaining ferroelectricity.
Layer optimization (10 layers) minimized leakage currents.
CMOS-compatible for next-gen smart devices.
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