Journals
2024
26. Subhashis Das, Nirosh M Eldose, Hryhorii Stanchu, Fernando Maia de Oliveira, Mourad Benamara, Yuriy I. Mazur, Zhong Chen, Alan Mantooth, and Gregory J. Salamo, "Epitaxial Growth and Characterization of GaAs (111) on 4H-SiC", Journal of Vacuum Science & Technology A, Vol. 42, No. 4, pp. 042702, Jul, 2024.
https://doi.org/10.1116/6.0003454
2023
25. Nirosh M. Eldose, Hryhorii Stanchu, Subhashis Das, Ilias Bikmukhametov, Chen Li, Satish Shetty, Yuriy I. Mazur, Shui-Qing Yu, and Gregory J. Salamo, "Strain-mediated Sn incorporation and segregation in compositionally graded Ge1-xSnx epilayers grown by MBE at different temperature", Crystal Growth & Design, Vol. 23, No. 11, pp. 7737-7743, Oct, 2023.
https://doi.org/10.1021/acs.cgd.3c00494
24. Emmanuel Wangila , Peter Lytvyn, Hryhorii Stanchu, Calbi Gunder, Fernando Maia De Oliveira, Samir K. Saha, Subhashis Das, Nirosh M Eldose, Chen Li, Mohammad Zamani Alavijeh, Yuriy I Mazur, Shui-Qing Yu, Gregory J Salamo, "Growth of germanium thin film on sapphire by molecular beam epitaxy", Crystals, Vol. 13, No. 11, pp. 1557, Oct, 2023.
https://doi.org/10.20944/preprints202309.1889.v1
2022
23. Shivani Sharma, Subhashis Das, Robin Khosla, Hitesh Shrimali, Satinder K. Sharma, “Two-Dimensional van der Waals Hafnium Disulfide and Zirconium Oxide-based Micro-Interdigitated Electrodes Transistors” IEEE Transactions on Electron Devices, Vol. 70, No. 4, pp. 1520-1526, Apr, 2023.
https://ieeexplore.ieee.org/abstract/document/9923765
2020
22. Manoj Kumar Yadav, Arnab Mondal, Subhashis Das, Satinder K. Sharma, Ankush Bag, “Impact of Annealing Temperature on Band-alignment of PLD Grown Ga2O3/Si (100) Heterointerface”, Journal of Alloys and Compounds, Vol. 819, pp. 153052-1-153052-7, 2020.
https://www.sciencedirect.com/science/article/pii/S0925838819342987
2019
21. Subhashis Das, Shivani Sharma and Satinder K. Sharma, “Facile Synthesis of 2D-HfS2 Flakes for μ-IDE based Methanol Sensor: Fast Detection at Room Temperature", IEEE Sensors Journal, Vol. 19, No. 20, pp. 9090-9096, 2019.
https://ieeexplore.ieee.org/document/8746720
20. Shivani Sharma, Subhashis Das, Robin Khosla, Hitesh Shrimali, Satinder K. Sharma, “Realization and Performance Analysis of Facile Processed μ-IDE based multi-layer HfS2/HfO2 Transistors”, IEEE Transactions on Electron Devices, Vol. 66, No. 07, pp. 3236-3241, 2019.
https://ieeexplore.ieee.org/document/8731896
19. Shivani Sharma, Subhashis Das, Robin Khosla, Hitesh Shrimali, and Satinder K. Sharma, “Highly UV sensitive Sn Nanoparticles blended with polyaniline onto Micro-Interdigitated Electrode Array for UV-C detection applications”, J Mater Sci: Mater Electron, Vol. 30, No. 6, pp. 7534-7542, 2019.
https://link.springer.com/article/10.1007/s10854-019-01067-9
2018
18. Ankush Bag, Subhashis Das, Rahul Kumar and Dhrubes Biswas,“ Evolution of Lateral V-defects on InGaN/GaN on Si(111) during PAMBE: A Role of Strain on Defect Kinetics”, CrystEngComm, Vol. 20, pp. 4151-4163, (2018).
http://pubs.rsc.org/en/content/articlelanding/2018/ce/c8ce00577j
17. Ankush Bag, Subhashis Das, Partha Mukhopadhyay and Dhrubes Biswas, “Observation and Analysis of Kink Effect during Drain Current Inception of GaN HEMT“, Superlattices and Microstructures, vol. 120, pp. 101-107, (2018).
https://www.sciencedirect.com/science/article/pii/S0749603618304038
16. Saptarsi Ghosh, Subhashis Das, Syed M. Dinara, Ankush Bag, Apurba Chakraborty, Partha Mukhopadhyay, Sanjay K Jana, Dhrubes Biswas, “OFF-state Leakage and Current Collapse in AlGaN/GaN HEMTs: a Virtual Gate Induced by Dislocations”, IEEE Transactions on Electron Devices, Vol. 65, No. 4, pp. 1333-1339, Apr. (2018).
https://ieeexplore.ieee.org/document/8306515/
15. Shivani Sharma, Robin Khosla, Subhashis Das, Hitesh Shrimali and Satinder K. Sharma, “High-Performance CSA-PANI based Organic Phototransistor by Elastomer Gratings”, Organic Electronics, Vol. 57, pp. 14-20 (2018).
https://www.sciencedirect.com/science/article/pii/S1566119918300855
14. Apurba Chakraborty, Saptarsi Ghosh, Partha Mukhopadhyay, Subhashis Das, Ankush Bag, Dhrubes Biswas, “Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis”, Superlattices and Microstructures, Vol. 113, pp. 147-152, (2018).
https://www.sciencedirect.com/science/article/pii/S0749603617318487.
2017
13. Subhashis Das, Saptarsi Ghosh, Rahul Kumar, Ankush Bag, and Dhrubes Biswas, “Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-assisted Molecular Beam Epitaxy”, IEEE Transactions on Electron Devices, Vol. 64, No. 11, pp. 4650-4656, Nov. 2017.
https://ieeexplore.ieee.org/document/8038000/
12. Subhashis Das, Ankush Bag, Rahul Kumar, Dhrubes Biswas, “Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K” IEEE Electron Device Letters, Vol. 38, No. 3, pp. 383-386, Mar. 2017.
https://ieeexplore.ieee.org/abstract/document/7805266/
11. Ankush Bag, Shubhankar Majumdar, Subhashis Das, Dhrubes Biswas, “Probing InGaN immiscibility at AlGaN/InGaN heterointerface on silicon (111) through two-step capacitance-voltage and conductance-voltage profiles”, Materials and Design, Vol. 133, pp. 176-185, (2017).
https://www.sciencedirect.com/science/article/pii/S0264127517307372.
2016
10. Subhashis. Das, Shubhankar. Majumdar, Rahul. Kumar, Saptarsi. Ghosh, Dhrubes. Biswas, “Thermodynamic Analysis of Acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures,” Scripta Materialia, Vol. 113, pp. 39-42 (2016).
http://www.sciencedirect.com/science/article/pii/S1359646215300154
9. Apurba Chakraborty, Saptarsi Ghosh, Partha Mukhopadhyay, Sanjay K Jana, Syed Mukulika Dinara, Ankush Bag, Mihir K. Mahata, Rahul Kumar, Subhashis Das, Palash Das, and Dhrubes Biswas, “Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN Heterostructure”, Electron. Mater. Lett., Vol. 12, No. 2, pp. 232-236 (2016).
http://link.springer.com/article/10.1007%2Fs13391-015-5249-9
8. S. Ghosh, S. M. Dinara, M. Mahata, S. Das, P. Mukhopadhyay, S. K. Jana, and D. Biswas, “On the different origins of electrical parameter degradation in reverse-bias stressed AlGaN/GaN HEMTs”, Phys. Status Solidi A, Vol. 213, No. 6, pp. 1559-1563 (2016).
http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532916/full
7. Rahul Kumar, Ankush Bag, Partha Mukhopadhyay, Subhashis Das, and Dhrubes Biswas, “Investigation of Cross-Hatch Surface and Study of Anisotropic Relaxation and Dislocation on InGaAs on GaAs (001)”, Electron. Mater. Lett., Vol. 12 No. 3, pp. 356-364 (2016).
6. Ankush. Bag, Subhashis. Das, and Dhrubes Biswas. “Observation of in-situ reciprocal lattice evolution of AlGaN/InGaN on Si (111) through GaN and AlN interlayers by RHEED and reflectance”, Phys. Status Solidi C, Vol. 13, No. 5-6, pp. 186-189 (2016).
http://onlinelibrary.wiley.com/doi/10.1002/pssc.201510202/abstract
2015
5. R. Kumar, A. Bag, P. Mukhopadhyay, S. Das, and D. Biswas, “Comparison of Different Grading Schemes in InGaAs Metamorphic Buffers on GaAs Substrate: Tilt Dependence on Cross-Hatch Irregularities,” Appl. Surf. Sci., Vol. 357, pp. 922-930 (2015).
http://www.sciencedirect.com/science/article/pii/S0169433215022576
4. R. Kumar, P. Mukhopadhyay, A. Bag, S. Kr. Jana, A. Chakraborty, S. Das, M. K. Mahata, and D. Biswas, "Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness" Appl. Surf. Sci., Vol. 324, pp. 304-309 (2015).
http://www.sciencedirect.com/science/article/pii/S0169433214024210
3. M. K. Mahata, S. Ghosh, S. Das, D. Biswas, “Universal Band Gap Determination Model for Doped Semiconductor Materials”, ECS Solid State Letters, Vol. 4, pp. P98 - P101, (2015).
http://ssl.ecsdl.org/content/4/12/P98?related-urls=yes&legid=ssl;4/12/P98.
2013
2. A. Hazra, S. Das, J. Kanungo, C. K. Sarkar, S. Basu, “Studies on a resistive gas sensor based on sol-gel grown nanocrystalline p-TiO2 thin film for fast hydrogen detection,” Sensors and Actuators B, Vol. 183, pp. 87-95 (2013).
http://www.sciencedirect.com/science/article/pii/S0925400513004024
1. A. Hazra, S. Das, J. Kanungo, E. Bontempi, C. K. Sarkar, P. Bhattacharyya, S. Basu, “Influence of temperature, voltage and hydrogen on the reversible transition of electrical conductivity in sol-gel grown nanocrystalline TiO2 thin film”, J Mater Sci: Mater Electron, Vol. 24, pp. 1658-1663 (2013).