2023

13. Subhashis Das, Nirosh M Eldose, Hryhorii Stanchu, Fernando Maia de Oliveira, Chen Li, Mourad Benamara, Yuriy I. Mazur, Gregory Salamo, "Growth and Characterization of GaAs (111) on 4H-SiC for Infrared Sensor", 37th NAMBE-2023, Madison, WI, USA.

2018

12. Indu Kumari, Subhashis Das, Ankush Bag, “Selective UV Detection by AlGaN/GaN Based MSM Photodetector for Integration with Silicon”, IEEE Sensors 2018, New Delhi, India. 

2017

11. Subhashis Das, Ankush Bag, Saptarsi Ghosh, Satinder K. Sharma, Dhrubes Biswas, “Effect of Si3N4 passivation on the acetone sensing performance of Pd/AlGaN/GaN heterostructure”, XIX IWPSD 2017, IIT Delhi, New Delhi, India.

10. Apurba Chakraborty, Saptarsi Ghosh, Subhashis Das, Ankush Bag and Dhrubes Biswas, “Effect of AlGaN Barrier Thickness on Trapping Characteristics in AlGaN/GaN Heterostructures”, XIX IWPSD 2017, IIT Delhi New Delhi, India. 

2015

9. S. Majumdar, R. Kumar, S. Das, M. Mahata, D. Biswas, “Utilization of Support Vector Machine in determining the optimum operating temperature of ternary III-Arsenide alloys grown by MBE” EMRS Fall Meeting 2015, Warsaw, Poland. 

8. S. Majumdar, S. Shaik, S. Das, R. Kumar, A. Bag, A. Chakraborty, M. Mahata, S. Ghosh, D. Biswas, “Temperature dependent etching of Gallium Nitride layers grown by PA- MBE”, International Conference on Microwave and Photonics (ICMAP-2015), ISM Dhanbad, JH, India. 

7. S. Ghosh, A. Chakraborty, S. M. Dinara, S. K. Jana, A. Bag, P. Mukhopadhyay, S. Das, D. Biswas, “Role of Dislocation Induced Off-State Gate Leakage in Drain Current Dispersion in Fresh and Stressed AlGaN/GaN Heterostructure Field Effect Transistors”, MRS Spring Meeting and Exhibit 2015, San Francisco, USA. 

6. S. Ghosh, S. Das, P. Mukhopadhyay, A. Bag, S. Majumdar, D. Biswas, “Electrical Degradation Mechanism of GaN High Electron Mobility Transistors on Silicon and Sapphire under OFF-state Stress”, MRS Fall Meeting and Exhibit 2015, Boston, USA. 

5. A. Chakraborty,  S. Ghosh, P. Mukhopadhyay, S. M. Dinara, A. Bag, M. K. Mahata, R. Kumar, S. Das, S. K. Jana, S. Majumdar, D. Biswas, “Trapping Effect Analysis of AlGaN/InGaN/GaN Heterostructure by Conductance-Frequency Measurement”, MRS Fall Meeting and Exhibit 2015, Boston, USA. 

2014

4. M. Mahata, S. Ghosh, S. Jana, P. Mukhopadhyay, A. Bag, S. M. Dinara, R. Kumar, S. Das, A. Chakrabarty, “Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE”, IEEE TechSym 2014, IIT Kharagpur, WB, India. 

3. S. M. Dinara, S. Kr. Jana, S. Ghosh, S. Das, P. Mukhopadhyay, S. Bhattacharya, D. Biswas, “Investigation of Hydrostatic Strain Effect and Dislocation Density Before and After a-Si3N4 Passivation on Al0.3Ga0.7N/GaN Heterostructure”, MRS Fall Meeting and Exhibit 2014, Boston, USA. 

2. R. Kumar, P. Mukhopadhyay, A. Bag, S. K. Jana, S. Das, M. K. Mahata, S. M. Dinara, and D. Biswas “Comprehensive study of AlGaAs/GaAs heterostructures grown by MBE: Structural and compositional analysis” 2nd ICEE, Dec 2014, Bangalore, KA, India.

1. S. Das, S. Majumdar, R. Kumar, M. K. Mahata, S. M. Dinara, D. Biswas “Comprehensive modeling of gas sensor based on Si3N4 passivated AlGaN/GaN Schottky diode” 2nd ICEE, Dec 2014, Bangalore, KA, India.