- Find the room temperature resistivity of n-type silicon doped with 1016 phosphorous atoms per cm3. The mobility of electron at this doping level at 300 K is 1300 cm2/V-s.
- Minority carriers (holes) are injected into a homogeneous n-type semiconductor sample at one point. An electric field of 50 V/cm is applied across the sample and the field moves the minority carriers a distance of 1 cm in 100 µs. Find the drift velocity and mobility of the minority carriers.
- Silicon bar 0.1 cm long and 100 µm2 in cross sectional area is doped with 1017 /cm3 Antimony (Shown in figure below). Find the current with 10V applied as shown in figure. The mobility of electron in this bar is 700 cm2/ V –s
- How long time does it take for average electron to drift 1 µm in pure Silicon at an electric field of 100 V/cm. The mobility of electron is 1350 cm2/V-s.
- Electrons in some conductor have a density of 1020 / cm3 and mobility of 800 cm2/V-s. If a uniform electric field of 1V/cm exists across the conductor, determine the electron current density.
- Electrons in some conductor have a density of 1019 / cm3 and mobility of 900cm2/V-s. If a uniform electric field of 1.5V/cm exists across the conductor, determine the electron current density.
- The specific density of the tungsten is 18.8 g/cm3 and its atomic weight is 184. Assume that there are two free electrons per atom. Calculate the concentration of free electrons.
- Compute the mobility of the free electrons in aluminium for which the density is 2.70g/cm3. The resistivity is 3.44 * 10 -6 ohm cm. Assume that aluminium has three valence electrons per atom.
Q1 Q2 – “Physics and Technology of Semiconductor Devices” by S M Sze
Q3 Q4– “Solid State Electronic Devices” by Ben Streetman and Sanjay Banerjee
Q5 Q6 Q7 Q8 – “ Integrated Electronics” by Millman, Halkias and Parikh