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International Journal Papers †: First Author, *: Corresponding Author
International Journal Papers †: First Author, *: Corresponding Author
[1] Jang, J., Kang, Y., Cha, D., Bae, J., & Lee, S*. (2019). Thin-film optical devices based on transparent conducting oxides: Physical mechanisms and applications. Crystals, 9(4), 192. (IF = 2.06) [Link]
[1] Jang, J., Kang, Y., Cha, D., Bae, J., & Lee, S*. (2019). Thin-film optical devices based on transparent conducting oxides: Physical mechanisms and applications. Crystals, 9(4), 192. (IF = 2.06) [Link]
[2] Kang, Y., Jang, J., Cha, D., & Lee, S*. (2021). Synaptic weight evolution and charge trapping mechanisms in a synaptic pass-transistor operation with a direct potential output. IEEE Transactions on Neural Networks and Learning Systems, 32(10), 4728-4741. (IF = 10.45) [Link]
[2] Kang, Y., Jang, J., Cha, D., & Lee, S*. (2021). Synaptic weight evolution and charge trapping mechanisms in a synaptic pass-transistor operation with a direct potential output. IEEE Transactions on Neural Networks and Learning Systems, 32(10), 4728-4741. (IF = 10.45) [Link]
[3] Cha, D., Kang, Y., Lee, S., & Lee, S*. (2022). A geometrical optimization rule of the synaptic pass-transistor for a low power analog accelerator. IEEE Access, 10, 35120-35130. (IF = 3.48) [Link]
[3] Cha, D., Kang, Y., Lee, S., & Lee, S*. (2022). A geometrical optimization rule of the synaptic pass-transistor for a low power analog accelerator. IEEE Access, 10, 35120-35130. (IF = 3.48) [Link]
[4] Cha, D., Kang, Y., & Lee, S*. (2022). Operating region-dependent characteristics of weight updates in synaptic In–Ga–Zn–O thin-film transistors. Scientific Reports, 12(1), 21441. (IF = 5) [Link]
[4] Cha, D., Kang, Y., & Lee, S*. (2022). Operating region-dependent characteristics of weight updates in synaptic In–Ga–Zn–O thin-film transistors. Scientific Reports, 12(1), 21441. (IF = 5) [Link]
[5] Cha, D., Pi, J., Do, G., Lee, N., Tae, K., & Lee, S*. (2024). A Bias‐Dependent Weight Update Characteristics of Low Power Synaptic Pass‐Transistors with a Hf‐Doped ZnO Channel Layer. Advanced Electronic Materials, 2400108. (IF = 6.2) [Link]
[5] Cha, D., Pi, J., Do, G., Lee, N., Tae, K., & Lee, S*. (2024). A Bias‐Dependent Weight Update Characteristics of Low Power Synaptic Pass‐Transistors with a Hf‐Doped ZnO Channel Layer. Advanced Electronic Materials, 2400108. (IF = 6.2) [Link]
[6] Do, G.†, Cha, D.†, Tae, K., Lee, N., Byun, S., Pi, J., & Lee, S.* (2024). Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film Transistors. IEEE ACCESS. (IF = 3.4) [Link]
[6] Do, G.†, Cha, D.†, Tae, K., Lee, N., Byun, S., Pi, J., & Lee, S.* (2024). Retention Characteristics Dependent on High-κ Gate-Insulator Stack in Hf-ZnO Synaptic Thin-Film Transistors. IEEE ACCESS. (IF = 3.4) [Link]
[7] Tae, K.†, Cha, D.†, Do, G., Lee, N., & Lee, S.* (2024). Weight-Update Characteristics Dependent on Carrier Densities of Hf-ZnO Charge-Trap Layers in Sub-threshold Synaptic Transistors. IEEE ACCESS. (IF = 3.4) [Link]
[7] Tae, K.†, Cha, D.†, Do, G., Lee, N., & Lee, S.* (2024). Weight-Update Characteristics Dependent on Carrier Densities of Hf-ZnO Charge-Trap Layers in Sub-threshold Synaptic Transistors. IEEE ACCESS. (IF = 3.4) [Link]
[8] Cha, D., Pi, J., Byun, S., & Lee, S.* (2025). Synaptic Characteristics Dependent on Programming-Pulse Properties of Low-Power Thin-Film Transistors with a Hf-ZnO Channel Layer. ACS Applied Electronic Materials, 7(1), 500-511. (IF = 4.7) [Link]
[8] Cha, D., Pi, J., Byun, S., & Lee, S.* (2025). Synaptic Characteristics Dependent on Programming-Pulse Properties of Low-Power Thin-Film Transistors with a Hf-ZnO Channel Layer. ACS Applied Electronic Materials, 7(1), 500-511. (IF = 4.7) [Link]
[9] Pi, J.†, Cha, D.†, & Lee, S.* (2025). A read voltage dependent synaptic characteristics of sub-threshold thin film transistors with a hf doped ZnO active layer. Scientific Reports, 15(1), 13257. (IF = 3.9) [Link]
[9] Pi, J.†, Cha, D.†, & Lee, S.* (2025). A read voltage dependent synaptic characteristics of sub-threshold thin film transistors with a hf doped ZnO active layer. Scientific Reports, 15(1), 13257. (IF = 3.9) [Link]
[10] Cha, D.*, Pi, J., & Lee, S*. (2025). Enhanced Retention Characteristics of Subthreshold Hf-ZnO Synaptic Pass-Transistors with Ultralow Power Consumption. ACS Applied Materials & Interfaces, 2025, 17, 22, 32667–32679. (IF = 8.2) [Link]
[10] Cha, D.*, Pi, J., & Lee, S*. (2025). Enhanced Retention Characteristics of Subthreshold Hf-ZnO Synaptic Pass-Transistors with Ultralow Power Consumption. ACS Applied Materials & Interfaces, 2025, 17, 22, 32667–32679. (IF = 8.2) [Link]
[11] Byun, S.†, Pi, J.†, Ko, Y., Cha, D.*, & Lee, S*. (2025). Synaptic Characteristics Dependent on Gate-Insulator Structural Properties of Low-Power Hf-ZnO Thin-Film Transistors. IEEE Transactions on Electron Devices. (IF = 3.2) [Link]
[11] Byun, S.†, Pi, J.†, Ko, Y., Cha, D.*, & Lee, S*. (2025). Synaptic Characteristics Dependent on Gate-Insulator Structural Properties of Low-Power Hf-ZnO Thin-Film Transistors. IEEE Transactions on Electron Devices. (IF = 3.2) [Link]
[12] Younggeon Ko†, Nayeong Lee†, Jeongseok Pi, Danyoung Cha*, and Sungsik Lee*. Effects of Channel Layer Properties on Weight-Update Characteristics of Low-Power Hf-doped ZnO Thin-Film Transistors. IEEE Transactions on Electron Devices. (IF = 3.2) [Link]
[12] Younggeon Ko†, Nayeong Lee†, Jeongseok Pi, Danyoung Cha*, and Sungsik Lee*. Effects of Channel Layer Properties on Weight-Update Characteristics of Low-Power Hf-doped ZnO Thin-Film Transistors. IEEE Transactions on Electron Devices. (IF = 3.2) [Link]
[13] Danyoung Cha†,*, Jeongseok Pi†, and Sungsik Lee*, Charge-Retention Characteristics Dependent on a Programming-Pulse Width of Low Power Synaptic Thin-Film Transistors. (Accepted to Scientific Reports)
[13] Danyoung Cha†,*, Jeongseok Pi†, and Sungsik Lee*, Charge-Retention Characteristics Dependent on a Programming-Pulse Width of Low Power Synaptic Thin-Film Transistors. (Accepted to Scientific Reports)
[14] Danyoung Cha, Jeongseok Pi, and Sungsik Lee*, Effects of Programming-Pulse Frequency on Synaptic Characteristics of In-Ga-Zn-O Thin-Film Transistors. (under review)
[14] Danyoung Cha, Jeongseok Pi, and Sungsik Lee*, Effects of Programming-Pulse Frequency on Synaptic Characteristics of In-Ga-Zn-O Thin-Film Transistors. (under review)
[15] Younggeon Ko, Jaeyeong Ryu, Danyoung Cha*, and Sungsik Lee*. Influence of Programming-Pulse Properties on Weight-Update Characteristics in Amorphous Oxide Semiconductor Synaptic Thin-Film Transistors. (In preparation)
[15] Younggeon Ko, Jaeyeong Ryu, Danyoung Cha*, and Sungsik Lee*. Influence of Programming-Pulse Properties on Weight-Update Characteristics in Amorphous Oxide Semiconductor Synaptic Thin-Film Transistors. (In preparation)
[16] Danyoung Cha, Jeongseok Pi, and Sungsik Lee*, Charge-Retention Characteristics of Inverted Synaptic Pass Thin-Film Transistors with Ultralow-Power Comsumption and High Linearity. (In preparation)
[16] Danyoung Cha, Jeongseok Pi, and Sungsik Lee*, Charge-Retention Characteristics of Inverted Synaptic Pass Thin-Film Transistors with Ultralow-Power Comsumption and High Linearity. (In preparation)
[17] Danyoung Cha, Jeongseok Pi, Younggeon Ko, and Sungsik Lee*, A Technology of Low-Power Synaptic Devices for Neuromorphic Systems with a Higher-Level Intelligence. (In preparation)
[17] Danyoung Cha, Jeongseok Pi, Younggeon Ko, and Sungsik Lee*, A Technology of Low-Power Synaptic Devices for Neuromorphic Systems with a Higher-Level Intelligence. (In preparation)
International and Domestic Conferences
International and Domestic Conferences
[1] Kang, Y., Cha, D., & Lee, S. (2020, January). Synaptic Weight Coverage and Potential Output in Synaptic Pass-Transistors. In 2020 International Conference on Electronics, Information, and Communication (ICEIC) (pp. 1-3). IEEE.
[1] Kang, Y., Cha, D., & Lee, S. (2020, January). Synaptic Weight Coverage and Potential Output in Synaptic Pass-Transistors. In 2020 International Conference on Electronics, Information, and Communication (ICEIC) (pp. 1-3). IEEE.
[2] Cha, D., Kang, Y., Jang, J., & Lee, S. (2021, January). Low Power Operation Dependent on Channel Width in Synaptic Pass-Transistor. In 2021 International Conference on Electronics, Information, and Communication (ICEIC) (pp. 1-3). IEEE.
[2] Cha, D., Kang, Y., Jang, J., & Lee, S. (2021, January). Low Power Operation Dependent on Channel Width in Synaptic Pass-Transistor. In 2021 International Conference on Electronics, Information, and Communication (ICEIC) (pp. 1-3). IEEE.
[3] 최대성, 문상현, 박찬준, 이동근, 차단영, 이성식. 시냅틱 패스 트랜지스터의 저전력 동작을 위한 로드저항 증가에 따른 시냅틱 특성에 관한 연구. 2021년 한국전기전자학회 학술대회.
[3] 최대성, 문상현, 박찬준, 이동근, 차단영, 이성식. 시냅틱 패스 트랜지스터의 저전력 동작을 위한 로드저항 증가에 따른 시냅틱 특성에 관한 연구. 2021년 한국전기전자학회 학술대회.
[4] Danyoung Cha,Yeonsu Kang, and Sungsik Lee. A Simulation Framework on a Synaptic Pass Transistor with a Geometrical Optimization for a Low Power Operation. Summer Annual Conference of IEIE, 2022.
[4] Danyoung Cha,Yeonsu Kang, and Sungsik Lee. A Simulation Framework on a Synaptic Pass Transistor with a Geometrical Optimization for a Low Power Operation. Summer Annual Conference of IEIE, 2022.
[5] Donghyeok Park, Hyunjoon Jeon, Chanwoo Kim, Hyunjin Choi, Juhyun Hong, Yerin Shin, Danyoung Cha, Yeonsu Kang, and Sungsik Lee. Synaptic Characteristics of the In-Ga-Zn-O Thin-Film Transistors with Defective Oxides. Korean International Semiconductor Conference on Manufacturing Technology 2022 (KISM 2022).
[5] Donghyeok Park, Hyunjoon Jeon, Chanwoo Kim, Hyunjin Choi, Juhyun Hong, Yerin Shin, Danyoung Cha, Yeonsu Kang, and Sungsik Lee. Synaptic Characteristics of the In-Ga-Zn-O Thin-Film Transistors with Defective Oxides. Korean International Semiconductor Conference on Manufacturing Technology 2022 (KISM 2022).
[6] Danyoung Cha,Yeonsu Kang, and Sungsik Lee. Weight Updates Characteristics dependent on the Operating Region in Synaptic Thin-Film Transistors. Summer Annual Conference of IEIE, 2023.
[6] Danyoung Cha,Yeonsu Kang, and Sungsik Lee. Weight Updates Characteristics dependent on the Operating Region in Synaptic Thin-Film Transistors. Summer Annual Conference of IEIE, 2023.
[7] Hyeona Jo, Hoyoung Cho, Moohyun Kim, So-Young Bak, Danyoung Cha, Muoonsuk Yi, Sungsik Lee and Jeongkyun Roh. Synaptic Characteristics of Organic Field-Effect-Transistors with a Polymer Charge Trap Layer for Neuromorphic Applications. 23rd International Meeting on Information Display (IMID 2023).
[7] Hyeona Jo, Hoyoung Cho, Moohyun Kim, So-Young Bak, Danyoung Cha, Muoonsuk Yi, Sungsik Lee and Jeongkyun Roh. Synaptic Characteristics of Organic Field-Effect-Transistors with a Polymer Charge Trap Layer for Neuromorphic Applications. 23rd International Meeting on Information Display (IMID 2023).
[8] H. Cho, D. Cha, M. Yi, S. Lee, J. Roh, “Improving Synaptic Characteristics of Organic Field-Effect Transistors through UV Modification of High-Glass Transition Polymer Electrets”, The 25th Cross Straits Symposium on Energy and Environmental Science and Technology (CSS-EEST25), Fukuoka, Japan (Nov. 2023).
[8] H. Cho, D. Cha, M. Yi, S. Lee, J. Roh, “Improving Synaptic Characteristics of Organic Field-Effect Transistors through UV Modification of High-Glass Transition Polymer Electrets”, The 25th Cross Straits Symposium on Energy and Environmental Science and Technology (CSS-EEST25), Fukuoka, Japan (Nov. 2023).
[9] Jeongseok Pi, Junyeong Jang, Donggeon Park, Dohyeong kim, Haeri Kim, Gyoungyeop Do, Danyoung Cha, and Sungsik Lee. Long-Term Plasticity dependent on the Gate Read-Voltage of Synaptic Thin-Film Transistors. The 31st Korean Conference on Semiconductors (KCS 2024)
[9] Jeongseok Pi, Junyeong Jang, Donggeon Park, Dohyeong kim, Haeri Kim, Gyoungyeop Do, Danyoung Cha, and Sungsik Lee. Long-Term Plasticity dependent on the Gate Read-Voltage of Synaptic Thin-Film Transistors. The 31st Korean Conference on Semiconductors (KCS 2024)
[10] Seokhyun Byun, Sangheon Chae, Sunbin Jo, Jeongmyeon Je, Nayeong Lee, Kunhee Tae, Danyoung Cha and Sungsik Lee. A Tunneling Oxide Thickness-dependent Synaptic Characteristics of ZnO-based Thin-Film Transistors. The 31st Korean Conference on Semiconductors (KCS 2024)
[10] Seokhyun Byun, Sangheon Chae, Sunbin Jo, Jeongmyeon Je, Nayeong Lee, Kunhee Tae, Danyoung Cha and Sungsik Lee. A Tunneling Oxide Thickness-dependent Synaptic Characteristics of ZnO-based Thin-Film Transistors. The 31st Korean Conference on Semiconductors (KCS 2024)
[11] Hoyoung Cho, Danyoung Cha, Moonsuk Yi, Sungsik Lee and Jeongkyun Roh. Improving Synaptic Characteristics of Organic Field-Effect Transistors through UV Modification of High-Glass Transition Polymer Electrets. The 31st Korean Conference on Semiconductors (KCS 2024)
[11] Hoyoung Cho, Danyoung Cha, Moonsuk Yi, Sungsik Lee and Jeongkyun Roh. Improving Synaptic Characteristics of Organic Field-Effect Transistors through UV Modification of High-Glass Transition Polymer Electrets. The 31st Korean Conference on Semiconductors (KCS 2024)
[12] Sangjin Han, Seojun Boo, Seokhyun Byun, Junyeong Jang, Danyoung Cha, and Sungsik Lee. Synaptic Characteristics Dependent on High-k Gate Insulator Stack of Hf-ZnO Thin-Film Transistors. Summer Annual Conference of IEIE, 2024.
[12] Sangjin Han, Seojun Boo, Seokhyun Byun, Junyeong Jang, Danyoung Cha, and Sungsik Lee. Synaptic Characteristics Dependent on High-k Gate Insulator Stack of Hf-ZnO Thin-Film Transistors. Summer Annual Conference of IEIE, 2024.
[13] Dongyoung Song, Hyeonwoo Song, Inho Lee, Jeongseok Pi, Jihoon Choi, Danyoung Cha, and Sungsik Lee. Synaptic Characteristics Dependent on Hf-doping Concentrations inHf-doped ZnO Thin-Film Transistors. Summer Annual Conference of IEIE, 2024.
[13] Dongyoung Song, Hyeonwoo Song, Inho Lee, Jeongseok Pi, Jihoon Choi, Danyoung Cha, and Sungsik Lee. Synaptic Characteristics Dependent on Hf-doping Concentrations inHf-doped ZnO Thin-Film Transistors. Summer Annual Conference of IEIE, 2024.
[14] Danyoung Cha, Jeongseok Pi, Seokhyun Byun, Gyoungyeop Do, Nayeong Lee, Kunhee Tae, Haeri Kim, and Sungsik Lee. Weight-Update Characteristics Dependent on a Load Resistance of Sub-Threshold Synaptic Pass-Transistors with a Hf-doped ZnO Channel Layer. 55th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, USA (Dec. 2024).
[14] Danyoung Cha, Jeongseok Pi, Seokhyun Byun, Gyoungyeop Do, Nayeong Lee, Kunhee Tae, Haeri Kim, and Sungsik Lee. Weight-Update Characteristics Dependent on a Load Resistance of Sub-Threshold Synaptic Pass-Transistors with a Hf-doped ZnO Channel Layer. 55th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, USA (Dec. 2024).
[15] Jeongeun Bae, Yoonji Han, Yujin Lee, Gyumin Oh, Jeongseok Pi, Danyoung Cha*, and Sungsik Lee*. Programming-Pulse Width Dependent Retention Characteristics of Hf-ZnO Synaptic Transistors. Summer Annual Conference of IEIE, 2025.
[15] Jeongeun Bae, Yoonji Han, Yujin Lee, Gyumin Oh, Jeongseok Pi, Danyoung Cha*, and Sungsik Lee*. Programming-Pulse Width Dependent Retention Characteristics of Hf-ZnO Synaptic Transistors. Summer Annual Conference of IEIE, 2025.
[16] Gayeong Park, Heonju Lim, Jimin Shin, Seungri Yang, Jaeyeong Ryu, Younggeon Ko, Danyoung Cha*, and Sungsik Lee*. Retention Characteristics Dependent on a Programming-Pulse Height of Hf-ZnO Synaptic Transistors. Summer Annual Conference of IEIE, 2025.
[16] Gayeong Park, Heonju Lim, Jimin Shin, Seungri Yang, Jaeyeong Ryu, Younggeon Ko, Danyoung Cha*, and Sungsik Lee*. Retention Characteristics Dependent on a Programming-Pulse Height of Hf-ZnO Synaptic Transistors. Summer Annual Conference of IEIE, 2025.
[17] Jonghyun Yun, Dongjin Han, Sungmin Park, Sejin Park, Danyoung Cha, Jeongseok Pi, Sungsik Lee, and Yoonki Hong*. Gas-sensing Characteristics of (Hf, Zr)-codoped ZnO Thin Film Transistor. Summer Annual Conference of IEIE, 2025.
[17] Jonghyun Yun, Dongjin Han, Sungmin Park, Sejin Park, Danyoung Cha, Jeongseok Pi, Sungsik Lee, and Yoonki Hong*. Gas-sensing Characteristics of (Hf, Zr)-codoped ZnO Thin Film Transistor. Summer Annual Conference of IEIE, 2025.
[18] Danyoung Cha, Jeongseok Pi, Younggeon Ko, and Sungsik Lee*. Charge-Retention Characteristics Dependent on Programming-Pulse Height of Ultralow-Power Synaptic Pass-Transistors. 56th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, USA (Dec. 2025) (Accepted)
[18] Danyoung Cha, Jeongseok Pi, Younggeon Ko, and Sungsik Lee*. Charge-Retention Characteristics Dependent on Programming-Pulse Height of Ultralow-Power Synaptic Pass-Transistors. 56th IEEE Semiconductor Interface Specialists Conference (SISC), San Diego, USA (Dec. 2025) (Accepted)
[19] Jeongseok Pi, Heonju Lim, Jimin Shin, Danyoung Cha*, and Sungsik Lee*. Influence of Operating Regions on Weight Linearity Characteristics in Synaptic Thin-Film Transistors. Korean International Semiconductor Conference on Manufacturing Technology 2025 (KISM 2025) (under review).
[19] Jeongseok Pi, Heonju Lim, Jimin Shin, Danyoung Cha*, and Sungsik Lee*. Influence of Operating Regions on Weight Linearity Characteristics in Synaptic Thin-Film Transistors. Korean International Semiconductor Conference on Manufacturing Technology 2025 (KISM 2025) (under review).
[20] Younggeon Ko, Jaeyeong Ryu, Danyoung Cha*, and Sungsik Lee*. Effects of Pulse-Widths on Weight-Update Characteristics in Synaptic Thin-Film Transistors. Korean International Semiconductor Conference on Manufacturing Technology 2025 (KISM 2025) (under review).
[20] Younggeon Ko, Jaeyeong Ryu, Danyoung Cha*, and Sungsik Lee*. Effects of Pulse-Widths on Weight-Update Characteristics in Synaptic Thin-Film Transistors. Korean International Semiconductor Conference on Manufacturing Technology 2025 (KISM 2025) (under review).
International and Domestic Patents
International and Domestic Patents
[1] 이성식, 강연수, 노정균, 차단영, 이문석, “박막 트랜지스터 기반 SNN의 회로적 구조,” 대한민국특허(출원), 10-2022-0143810, 1 Nov. 2022
[1] 이성식, 강연수, 노정균, 차단영, 이문석, “박막 트랜지스터 기반 SNN의 회로적 구조,” 대한민국특허(출원), 10-2022-0143810, 1 Nov. 2022
[2] 이성식, 강연수, 노정균, 차단영, 이문석, “박막 트랜지스터 기반 SNN 회로 및 제조 방법,” 대한민국특허(출원), 10-2023-0001880, 5 Jan. 2023
[2] 이성식, 강연수, 노정균, 차단영, 이문석, “박막 트랜지스터 기반 SNN 회로 및 제조 방법,” 대한민국특허(출원), 10-2023-0001880, 5 Jan. 2023
[3] Lee, S., Yeonsu, K. A. N. G., Roh, J., Danyoung, C. H. A., & Moonsuk, Y. I. (2024). U.S. Patent Application No. 18/384,149.
[3] Lee, S., Yeonsu, K. A. N. G., Roh, J., Danyoung, C. H. A., & Moonsuk, Y. I. (2024). U.S. Patent Application No. 18/384,149.
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