42. Explainable Integration of Process and Optical Parameters for Plasma Etch Depth Prediction
Myung J, Go E, Cho D, Ko M, Jeon N, Kim J, Hahn B, Jung Y, Kim H-U, Kim J
under review
41. Vacuum-Processed Hybrid Resists for Advanced Lithography: Molecular Layer Deposition and Sequential Infiltration Synthesis
Jung J, Park R, Jeon N*
under review
40. Metal Oxide-Mediated Molecular Cross-linking in PMMA Hybrids for High-Sensitivity Negative-Tone Lithography
Ko M, Ham J, Kim YH, Kim H-U, Jeon N*
under review
39. Atomic Layer Etching of HfO₂ and ZrO₂ Using NbF₅ and TiCl₄ in High-Aspect-Ratio 3D Nanohole Structures
Choi B, Zewdie GM, Shin H,* Jeon N*
Accepted, Chemistry of Materials
38. Facet modulation-induced formation of CsPbBr3–PbTe nanocrystal heterostructures for self-powered photodetector
Artavazd K, Lee S, Hoang V-H, Jeon M, Kim C-Y, Yun S, Jung J, Jeon N, Yoon S-G, Jang JH, Choi J*
37. Unlocking Ferroelectricity in Scalable AlBN Films via Plasma-Enhanced Atomic Layer Deposition
Lee J, Jeon J, Jung D, Lee Y, Shin B, An J-H, Jeong J-R, Yu Y-J, Shin H,* Jeon N*
36. Doping and Passivation Effect of TMD Devices through HfO₂ Thin Film Deposition
Hwang Y, Lee J, Kim H, Choi B, Kim S, Jeon N, Mun J, Kim H-U,* Choi MS*
35. MoNx Nanoscale-Thick Films Using BTBMMo and Ammonia in Plasma-Enhanced ALD for Cu Diffusion Barriers in High-Aspect-Ratio Nanohole 3D Interconnects
Cho G, Kim M, Hong K, Jeon N*
ACS Applied Nano Materials 2025, 8(44): 21442
34. Research Trends of Atomic Layer Deposition of Metal Nitrides and Their Applications in Semiconductor Industry
Lee J, Choi B, Ahn J, Jeon N*
33. Transient, Reusable Top-Coats for the Vertical Orientation of High-χ Block Copolymers for Nanopatterning
Lee JE, Park JS, Yange GG, Choi HJ, Lim J, Kim J, Choi B, Ko M, Jeon N, Kim JH,* and Jin HM*
ACS Applied Nano Materials 2023, 6(18): 16790
32. Comparative Study of Thermal and Plasma-Enhanced Atomic Layer Deposition of Iron Oxide Using Bis(N,N'-di-butylacetamidinato)iron(II)
Choi B, Park G-W, Jeong J-R, Jeon N
31. Key Factors in Enhancing Pseudocapacitive Properties of PANI-InOx Hybrid Thin Films Prepared by Sequential Infiltration Synthesis
Ham J, Kim H-U, Jeon N
30. Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
Choi B, Kim H-U, Jeon N
29. Conductive Polyaniline–Indium Oxide Composite Films Prepared by Sequential Infiltration Synthesis for Electrochemical Energy Storage
Ham J, Park S, Jeon N
28. Sequential Infiltration Synthesis with Organic Co-reactants for Extensively Swollen Organic−Inorganic Hybrid Thin Films
Ko M, Kim H-U, Jeon N
27. Understanding Physicochemical Mechanisms of Sequential Infiltration Synthesis toward Rational Process Design for Uniform Incorporation of Metal Oxides
Ham J, Ko M, Choi B, Kim H-U, Jeon N
26. A New Nanoparticle Heterostructure Strategy with Highly Tunable Morphology via Sequential Infiltration Synthesis
Ko M, Kirakosyan A, Kim H-U, Seok H, Choi J, Jeon N
25. Chromism-Integrated Sensors and Devices for Visual Indicators
Seok H, Son S, Cho J, Choi S, Park K, Kim C, Jeon N, Kim T, Kim H-U
24. Boosting Electrochemical Activity of Porous Transparent Conductive Oxides Electrodes Prepared by Sequential Infiltration Synthesis
Ko M, Kim H-U, Jeon N
23. Concurrent and Selective Determination of Dopamine and Serotonin with Flexible WS2/Graphene/Polyimide Electrode Using Cold Plasma
Kim H-U, Koyappayil A, Seok H, Kim C, Park K, Jeon N, Kang W, Lee M, Kim T
22. Electronic Conductivity of Nanoporous Indium Oxide Derived from Sequential Infiltration Synthesis
Taggart AD, Jeon N, Rozyyev V, Karapetrova E, Zaluzec NJ, Waldman RZ, Darling SB, Elam JW, Martinson ABF
21. Resolving the Atomic Structure of Sequential Infiltration Synthesis Derived Inorganic Clusters
He X, Waldman RZ, Mandia D, Jeon N, Zaluzec NJ, Borkiewicz OJ, Ruett U, Darling SB, Martinson ABF, Tiede DM
ACS Nano 2020, 14(11): 14846
20. Stabilization of Low Valent Zirconium Nitrides in Titanium Nitride via Plasma-Enhanced Atomic Layer Deposition and Assessment of Electrochemical Properties
Noh H, Jeon N, Martinson ABF, Hupp J
ACS Applied Energy Materials 2020, 3(6): 5095-5100
19. Multiscale porous elastomer substrates for multifunctional on-skin electronics with passive-coolingg capabilities
Yu Y, Sun B, Ling Y, Fei Q, Chen Z, Li X, Guo P, Jeon N, Goswamii S, Liao Y, Ding S, Yu Q, Lin J, Huang G, Yan Z
Proceedings of the National Academy of Sciences 2019 , 117(1): 205-213
18. High Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics
Jeon N, Mandia DJ, Grey SK, Foley IV JJ, Martinson ABF
ACS Applied Materials & Interfaces 2019 , 11(44): 41347-41355
17. Sequential Infiltration Synthesis of Electronic Materials: Group 13 Oxides via Metal Alkyl Precursors
Waldman RZ, Jeon N, Mandia DJ, Heinonen O, Darling SB, Martinson ABF
Chemistry of Materials 2019, 31(14): 5274-5285
16. Comprehensive Computational Study of Partial Lead Substitution in Methylammonium Lead Bromide
Mannodi-Kanakkithodi A, Park J-S, Jeon N, Cao DH, Gosztola DJ, Martinson ABF, et al.
Chemistry of Materials 2019, 31(10): 3599-3612
15. Plasma-Enhanced Atomic Layer Deposition of TiAlN: Compositional and Optoelectronic Tunability
Jeon N, Lightcap I, Mandia DJ, Martinson ABF
ACS Applied Materials & Interfaces 2019, 11(12): 11602-11611
14. Charge Transfer Dynamics of Phase-Segregated Halide Perovskites: CH3NH3PbCl3 and CH3NH3PbI3 or (C4H9NH3)2(CH3NH3)n−1PbnI3n+1 Mixtures
Cao DH, Guo P, Mannodi-Kanakkithodi A, Wiederrecht GP, Gosztola DJ, Jeon N, et al.
ACS Applied Materials & Interfaces 2019, 11(9): 9583-9593
13. Pareto Optimal Spectrally Selective Emitters for Thermophotovoltaics via Weak Absorber Critical Coupling
Jeon N, Hernandez JJ, Rosenmann D, Gray SK, Martinson ABF, Foley IV JJ
Advanced Energy Materials 2018, 8(25): 1801035
12. Connecting Composition-Driven Faceting with Facet-Driven Composition Modulation in GaAs–AlGaAs Core–Shell Nanowires
Jeon N, Ruhstorfer D, Döblinger M, Matich S, Loitsch B, Koblmüller G, et al.
Nano Letters 2018, 18(8): 5179-5185
11. He-Ion Microscopy as a High-Resolution Probe for Complex Quantum Heterostructures in Core–Shell Nanowires
Pöpsel C, Becker J, Jeon N, Döblinger M, Stettner T, Gottschalk YT, et al.
Nano Letters 2018, 18(6): 3911-3919
10. High-Resolution Nanoscale Solid-State Nuclear Magnetic Resonance Spectroscopy
Rose W, Haas H, Chen AQ, Jeon N, Lauhon LJ, Cory DG, et al.
Physical Review X 2018, 8(1): 011030
9. Epitaxial Heterostructure Nanowires
Jeon N. Lauhon LJ
Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications 2017, pp 3-29
8. Quantum Transport and Sub-Band Structure of Modulation-Doped GaAs/AlAs Core–Superlattice Nanowires
Irber DM, Seidl J, Carrad DJ, Becker J, Jeon N, Loitsch B, et al.
Nano Letters 2017, 17(8): 4886-4893
7. Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires
Loitsch B, Jeon N, Döblinger M, Winnerl J, Parzinger E, Matich S, et al.
Applied Physics Letters 2016, 109(9): 093105
6. Impact of Dopant Compensation on Graded p–n Junctions in Si Nanowires
Amit I, Jeon N (Amit & Jeon contributed equally), Lauhon LJ, Rosenwaks Y
ACS Applied Materials & Interfaces 2016, 8(1): 128-134
5. Alloy Fluctuations Act as Quantum Dot-like Emitters in GaAs-AlGaAs Core–Shell Nanowires
Jeon N, Loitsch B (Jeon & Loitsch contributed equally), Morkoetter S, Abstreiter G, Finley J, Krenner HJ, et al.
ACS Nano 2015, 9(8): 8335-8343
4. Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core–Shell Nanowire Transistors
Morkötter S, Jeon N, Rudolph D, Loitsch B, Spirkoska D, Hoffmann E, et al.
Nano Letters 2015, 15(5): 3295-3302
3. Chapter Six - Atom Probe Tomography of Nanowires. In: Morral AFI, Dayeh SA, Jagadish C (eds)
Jeon N, Lauhon LJ
Semiconductors and Semimetals 2015, 93: pp 249-278
2. Origin of Polytype Formation in VLS-Grown Ge Nanowires through Defect Generation and Nanowire Kinking
Jeon N, Dayeh SA, Lauhon LJ
Nano Letters 2013, 13(8): 3947-3952
1. Enhanced multiferroic properties of single-phase BiFeO3 bulk ceramics by Ho doping
Jeon N, Rout D, Kim IW, Kang S-JL
Applied Physics Letters 2011, 98(7): 072901
1. High temperature selective emitters via critical coupling of weak absorbers
Martinson ABF, Jeon N, Grey SK, Foley IV JJ
US Patent Number: US10,819,270